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Product List
ROHM supplies two types of SiC devices: Schottky barrier diodes (SBDs) and field effect transistors (FETs). These are available in wafer (bare die), discrete packaged parts, and full-power modules. A wide voltage range is offered from 650 V up to 1700 V. ON resistances as low as 8 mΩ are provided in the latest 4th generation SiC FETs, while SiC modules go down to 3 mΩ. ROHM’s considerable portfolio of SiC devices allows power electronic designers to select the ideal solution based on set requirements.
PTM Published on: 2023-07-06
