IRFBE30PBF

DigiKey Part Number
IRFBE30PBF-ND
Manufacturer
Manufacturer Product Number
IRFBE30PBF
Description
MOSFET N-CH 800V 4.1A TO220AB
Manufacturer Standard Lead Time
14 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFBE30PBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥17.73000¥17.73
50¥14.26220¥713.11
100¥11.73440¥1,173.44
500¥9.92886¥4,964.43
1,000¥8.42448¥8,424.48
2,000¥8.00328¥16,006.56
5,000¥7.70237¥38,511.85
10,000¥7.44738¥74,473.80
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.