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Nexperia- e-mode GaN FETs | First Look

Nexperia's e-mode GaN FETs are designed for low- or high-power conversion applications, offering enhanced power system flexibility. These FETs provide superior switching performance with very low QC and QOSS values, boosting efficiency in 650 V AC/DC and DC/AC power conversion. They also bring substantial space and bill of materials savings in applications like BLDC and micro servo motor drives, as well as LED drivers. The lineup comprises five e-mode GaN FETs with 650 V ratings, offering RDS(ON) values ranging from 80 mΩ to 190 mΩ, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. The range also offers a 100 V, 3.2 mΩ GaN FET in a WLCSP8 package and a 150 V, 7 mΩ device in a FCLGA package. Featuring ultra-high-frequency switching, no reverse-recovery charge, low gate charge, low output charge, and high performance at more than 99% efficiency. Qualified for industrial applications according to JEDEC standards. Nexperia’s GaN FETs deliver the fastest transition / switching capability, with highest dv/dt and di/dt, and best power efficiency. Bringing enhanced power density through reduced conduction and switching losses across various applications, including datacom/telecom, consumer charging, solar, and industrial fields.

11/3/2023 1:57:48 PM

Part List

图片制造商零件编号描述可供货数量价格查看详情
650 V, 80 MOHM GALLIUM NITRIDE (GAN080-650EBEZ650 V, 80 MOHM GALLIUM NITRIDE (1995 - 立即发货$72.32查看详情
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650FBEZ650 V, 140 MOHM GALLIUM NITRIDE2376 - 立即发货$49.34查看详情
650 V, 140 MOHM GALLIUM NITRIDEGAN140-650EBEZ650 V, 140 MOHM GALLIUM NITRIDE2445 - 立即发货$54.84查看详情
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650EBEZ650 V, 190 MOHM GALLIUM NITRIDE2254 - 立即发货$39.08查看详情
650 V, 190 MOHM GALLIUM NITRIDEGAN190-650FBEZ650 V, 190 MOHM GALLIUM NITRIDE1945 - 立即发货$35.14查看详情
100 V, 3.2 MOHM GALLIUM NITRIDEGAN3R2-100CBEAZ100 V, 3.2 MOHM GALLIUM NITRIDE835 - 立即发货$41.05查看详情
150 V, 7 MOHM GALLIUM NITRIDE (GGAN7R0-150LBEZ150 V, 7 MOHM GALLIUM NITRIDE (G4067 - 立即发货$25.86查看详情

Related Product Highlight

增强模式 GaN FET Nexperia 增强模式 GaN FET 提供卓越的开关性能、更高的 AC/DC 和 DC/AC 电源转换效率，并显著节省空间和 BOM。