SMP3V3 - SMP36A Datasheet by Vishay Semiconductor Diodes Division

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SMP3V3 thru SMP36A
www.vishay.com Vishay General Semiconductor
Revision: 10-Aug-2018 1Document Number: 88481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB®
Transient Voltage Suppressors
DESIGN SUPPORT TOOLS
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Available in uni-directional
400 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
industrial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
VBR uni-directional 4.10 V to 44.2 V
VWM 3.3 V to 36 V
PPPM 400 W
IFSM 40 A
TJ max. 150 °C
Polarity Uni-directional
Package SMP (DO-220AA)
SMP (DO-220AA)
eSMP
®
Series
CathodeAnode
click logo to get started
Available
Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2) PPPM 400 W
Peak pulse current with a 10/1000 μs waveform (1) IPPM See table next page A
Peak forward surge current 10 ms single half sine-wave (2) IFSM 40 A
Maximum instantaneous forward voltage at 25 A (3) VF2.5 V
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
VISHAY. DwodesAmencasmwshaymm DwodesAswamwshaymm DwodesEuvogtevlshayxom www.v\shay.com/doc?91000
SMP3V3 thru SMP36A
www.vishay.com Vishay General Semiconductor
Revision: 10-Aug-2018 2Document Number: 88481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) VBR measured after IT applied for 300 μs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Notes
(1) Mounted on PCB with 5.0 mm x 5.0 mm copper pad areas attached to each terminal
(2) Mounted on minimum recommended pad layout
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
MIN. MAX.
SMP3V3 AC 4.10 5.10 1.0 3.3 200 54.8 7.3
SMP5.0A AE 6.40 7.07 10 5.0 150 43.5 9.2
SMP6.0A AG 6.67 7.37 10 6.0 600 38.8 10.3
SMP6.5A AK 7.22 7.98 10 6.5 100 35.7 11.2
SMP7.0A AM 7.78 8.60 10 7.0 50 33.3 12.0
SMP7.5A AN 8.33 9.21 1.0 7.5 50 31.0 12.9
SMP8.0A AR 8.89 9.83 1.0 8.0 20 29.4 13.6
SMP11A AZ 12.2 13.5 1.0 11 1.0 22.0 18.2
SMP12A BE 13.3 14.7 1.0 12 1.0 20.1 19.9
SMP13A BG 14.4 15.9 1.0 13 1.0 18.6 21.5
SMP14A BK 15.6 17.2 1.0 14 1.0 17.2 23.2
SMP15A BM 16.7 18.5 1.0 15 1.0 16.4 24.4
SMP16A BP 17.8 19.7 1.0 16 1.0 15.4 26.0
SMP17A BR 18.9 20.9 1.0 17 1.0 14.5 27.6
SMP18A BT 20.0 22.1 1.0 18 1.0 13.7 29.2
SMP20A BV 22.2 24.5 1.0 20 1.0 12.3 32.4
SMP22A BX 24.4 26.9 1.0 22 1.0 11.3 35.5
SMP24A BZ 26.7 29.5 1.0 24 1.0 10.3 38.9
SMP26A CE 28.9 31.9 1.0 26 1.0 9.5 42.1
SMP28A CG 31.1 34.4 1.0 28 1.0 8.8 45.4
SMP30A CK 33.3 36.8 1.0 30 1.0 8.3 48.4
SMP33A CM 36.7 40.6 1.0 33 1.0 7.5 53.3
SMP36A CP 40.0 44.2 1.0 36 1.0 6.9 58.1
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Typical thermal resistance, junction to lead (1) RJL 50 °C/W
Typical thermal resistance, junction to ambient (2) RJA 250 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMP3V3-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
SMP3V3-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
SMP11A-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
SMP11A-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
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SMP3V3 thru SMP36A
www.vishay.com Vishay General Semiconductor
Revision: 10-Aug-2018 3Document Number: 88481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Derating Curve
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Typical Transient Thermal Impedance
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
td - Pulse Width (µs)
10
0.1
0.1 100 10 000
P
PPM
- Peak Pulse Power (kW)
1 100010
1
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
TJ - Initial Temperature (°C)
100
0
0 150 200
Peak Pulse Power (P
PP
) of Current (I
PP
)
Derating in Percentage (%)
25 17550
50
75
25
12510075
t - Time (ms)
150
0
04.0
I
PPM
- Peak Pulse Current, % I
RSM
1.0 2.0
100
50
3.0
t
d
tr = 10 µs
Half Value -
IPPM
IPP
2
10/1000 µs Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Value
IPPM
Measured at
Zero Bias
Measured at
Stand-Off
Voltage, VWM
VWM - Reverse Stand-Off Voltage (V)
10 000
10
1100
C
J
- Junction Capacitance (pF)
10
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
t - Pulse Duration (s)
1000
0.1
0.001 1000
Transient Thermal Impedance (°C/W)
1
10
1
100
0.10.01 10010
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SMP3V3 thru SMP36A
www.vishay.com Vishay General Semiconductor
Revision: 10-Aug-2018 4Document Number: 88481
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.000 (0.00)
0.012 (0.30)
0.013 (0.35)
0.004 (0.10)
0.018(0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.036 (0.91)
0.024 (0.61)
0.016 (0.40)
0.032 (0.80)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF.
0.105
(2.67) 0.025
(0.635)
0.100
(2.54)
0.030
(0.762)
0.050
(1.27)
Cathode Band
0.142 (3.61)
0.126 (3.19)
0.158(4.00)
0.146 (3.70)
0.086 (2.18)
0.074 (1.88)
0.087 (2.20)
0.103 (2.60)
SMP (DO-220AA)
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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