Power GaN Solution

Engineers have long relied on silicon as their semiconductor of choice, but silicon’s effectiveness in power electronics has reached a plateau. However, the industry still demands smaller sizes and higher performance. EPC’s GaN FETs can achieve higher switching speeds in a smaller package when compared to silicon enabling more efficient and power dense designs. In order to take advantage of these GaN characteristics, Texas Instruments offers the LMG1210 FET driver. This is a 50 MHz half-bridge driver optimized for high frequency GaN circuits. When looking for inductors to pair with it, Würth Elektronik’s WE-MAPI and WE-MAIA series are a great choice with their high current capacity and compact size. With GaN, applications such as DC to DC converters and Class D amplifiers can run faster and more efficiently while consuming less PCB real estate.

Featured Reference Design

Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters

This reference design from Texas Instruments implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.

Learn more about this Reference Design in our Reference Design Library.

Applications:

High Speed DC/DC Converters
- Increased efficiency
- Larger single stage conversions
Wireless Power
- High switching frequency for high efficiency
Class D Audio Amplifiers
- Increased efficiency
- Less distortion
Power Inverters
- Increased efficiency
- Reduced size
RF Envelope Tracking
- High frequency converters
LIDAR
- Improved resolution and accuracy
- Faster response times

EPC8009/2039 Features

Small footprint- 2.05 mm x 0.85 mm Bumped Die (EPC8009), 1.35 mm x 1.35 mm Bumped Die (EPC2039)
65V Vdss (EPC8009), 65V Vdss (EPC2039)
2.7A continuous drain current (EPC8009), 6.8A continuous drain current (EPC2039)
Low RDS(on) – 90mΩ (EPC8009), 20mΩ (EPC2039)
Low QG – 370 pC (EPC8009), 1910 pC (EPC2039)

LMG1210 Features

Voltage up to 200 V
Up to 50-MHz operation
10 ns typical propagation delay
3.4 ns high-side to low-side matching
Minimum pulse width of 4 ns
1.5 A peak source and 3 A peak sink currents
Resistor-Programmable Deadtime
Internal LDO for adaptability to voltage rails
High 300 V/ns CMTI
HO to LO capacitance less than 1 pF
UVLO and overtemperature protection
Low-inductance 3 mm x 4 mm WQFN package

WE-MAPI/WE-MAIA Features

Magnetic iron alloy allows high rated currents
Compact design
Magnetically shielded
High current capability and handles high transient current spikes
Low acoustic noise and low leakage flux noise
Operating temperature: –40 °C to 125 °C
AEC-Q 200 qualified (WE-MAIA Only)
Lower inductance values for high switching frequencies

Featured Products

EPC eGaN

Part Number	Description	Vdss	Id	Rds(on)	Qg	Die Size
EPC2040	N-Channel 15V 3.4A (Ta) Surface Mount Die	15 V	3.4 A	24 mΩ	745 pC	0.85 mm x 1.25 mm
EPC8009	N-Channel 65V 2.7A (Ta) Surface Mount Die	65 V	4 A	90 mΩ	370 pC	2.1 mm x 0.85 mm
EPC2039	N-Channel 80V 6.8A (Ta) Surface Mount Die	80 V	6.8 A	20 mΩ	1.9 nC	1.35 mm x 1.35 mm
EPC2045	N-Channel 100V 16A (Ta) Surface Mount Die	100 V	16 A	5.6 mΩ	5.9 nC	2.5 mm x 1.5 mm
EPC2016C	N-Channel 100V 18A (Ta) Surface Mount Die	100 V	18 A	12 mΩ	3.4 nC	2.1 mm x 1.6 mm
EPC2053	N-Channel 100V 48A Surface Mount Die	100 V	48 A	3.1 mΩ	12 nC	3.5 mm x 2.0 mm
EPC2019	N-Channel 200V 8.5A (Ta) Surface Mount Die	200 V	8.5 A	36 mΩ	1.8 nC	2.8 mm x 0.95 mm

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Texas Instruments LMG1210

	Image	Part Number	Description	Supply Voltage	Gate Type
		LMG1210RVRT	200 V, 1.5 A/3 A Half-Bridge Gate Driver IC TTL 19-WQFN (3x4)	6 V - 18 V	N-Channel

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Würth Elektronik WE-MAPI/WE-MAIA Power Inductors

Part Number	Description	Type	Material Core	Inductance	Tolerance
78438356010	1 µH Shielded Molded Inductor 7.2 A 15 mΩ Max Nonstandard	Molded	Iron Alloy	1 µH	±20%
78438323047	4.7 µH Shielded Molded Inductor 940 mA 388 mΩ Max 1008 (2520 Metric)	Molded	Iron Alloy	4.7 µH	±30%
78438357010	1 µH Shielded Wirewound Inductor 7.4 A 13.5 mΩ Max Nonstandard	Wirewound	Iron Alloy	1 µH	±20%
78438357012	1.2 µH Shielded Wirewound Inductor 7 A 15.5 mΩ Max Nonstandard	Wirewound	Iron Alloy	1.2 µH	±20%
78438357018	1.8 µH Shielded Wirewound Inductor 5.8 A 21 mΩ Max Nonstandard	Wirewound	Iron Alloy	1.8 µH	±20%