NXP Semiconductors

GD3162 IGBT/SiC Gate Driver with Dynamic Gate Strength Adjust

NXP's gate driver offers an adjustable dynamic gate strength drive via a programmable interface over SPI

Image of NXP's GD3162 IGBT/SiC Gate DriverNXP's GD3162 is an advanced, galvanically isolated, single-channel gate driver designed to drive SiC and IGBT modules for xEV traction inverters.

This device offers an adjustable dynamic gate strength drive via a programmable interface over SPI. In addition, advanced programmable protection features are autonomously managed as faults and the status of the power device and gate driver are reported via the interrupt pins.

The GD3162 is designed for high-functional safety integrity level systems (ASIL C/D) and meets the stringent requirements of automotive applications as it is fully AEC-Q100 grade 1 qualified.

Features
  • Integrated boost capability for increased drive strength: Up to 10 A, 20 A, or 30 A source/sink current
  • Max VCC output voltage: 25 V
  • Programmable ADC delay: up to 8 μs sampling delay from rising or falling edge of PWM
  • SPI programmable ISEN/COMP setpoint allows the gate driver to automatically control gate drive strength based on high-voltage domain input
  • Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
  • Fast VCE DeSat detection and reaction time: less than 1 µs (for SiC)
  • Improved PWM deadtime range for reduced switching losses (for SiC)
  • Programmable two-level turn-off (2 LTO) and soft-shutdown (SSD)
  • Provides either MCU-controlled or safety logic-controlled gate drive to actively discharge the DC link capacitor
  • Additional programmable fault pin (INTA)
  • Integrated HV fault management (FSISO)
  • Programmable VCE output monitoring
  • Minimum common-mode transient immunity (CMTI) greater than 100 V/ns
  • 5,000 VRMS galvanic isolation per UL 1577 (planned)
  • 32-pin wide body SOIC package: 7.5 mm x 11 mm x 2.5 mm body with 0.65 mm pitch
Applications
  • Electric vehicles: BEV, HEV, and PHEV
  • EV traction inverters (400 V/800 V and IGBT/SiC)
  • High-voltage traction inverters
  • Electrical two-wheelers
Diagrams
Image of NXP's GD3162 IGBT/SiC Gate Driver Diagram 

GD3162 IGBT/SiC Gate Driver

图片制造商零件编号描述可供货数量价格查看详情
GATE DRIVERMGD3162AM550EKTGATE DRIVER0 - 立即发货$87.10查看详情
ICMGD3162AM551EKTIC0 - 立即发货$98.43查看详情

Development Boards

图片制造商零件编号描述可供货数量价格查看详情
EVAL BOARD FOR GD3162FRDMGD3162HBIEVMEVAL BOARD FOR GD31620 - 立即发货$4,009.70查看详情
EVAL BOARD FOR GD3162FRDMGD3162RPEVMEVAL BOARD FOR GD31620 - 立即发货See Page for Pricing查看详情
EVAL BOARD FOR GD3162RDGD3162I3PH5EVBEVAL BOARD FOR GD31621 - 立即发货$6,069.13查看详情
发布日期： 2024-05-08