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© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 4
1Publication Order Number:
FCU600N65S3R0/D
FCU600N65S3R0
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 6 A, 600 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
•700 V @ TJ = 150°C
•Typ. RDS(on) = 493 mW
•Ultra Low Gate Charge (Typ. Qg = 11 nC)
•Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
•100% Avalanche Tested
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•Computing / Display Power Supplies
•Telecom / Server Power Supplies
•Industrial Power Supplies
•Lighting / Charger / Adapter
I−PAK
(DPAK3 STRAIGHT LEADS)
CASE 369AP
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
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D
S
G
VDSS RDS(ON) MAX ID MAX
650 V 600 mW @ 10 V 6 A
N-Channel MOSFET
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FCU600N65S3R0 = Specific Device Code
$Y&Z&3&K
FCU600
N65S3R0
GDS
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol Parameter Value Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage DC ±30 V
AC (f > 1 Hz) ±30 V
IDDrain Current Continuous (TC = 25°C) 6 A
Continuous (TC = 100°C) 3.8
IDM Drain Current Pulsed (Note 1) 15 A
EAS Single Pulsed Avalanche Energy (Note 2) 24 mJ
IAS Avalanche Current (Note 2) 1.6 A
EAR Repetitive Avalanche Energy (Note 1) 0.54 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20
PDPower Dissipation (TC = 25°C) 54 W
Derate Above 25°C 0.43 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
RqJC Thermal Resistance, Junction to Case, Max. 2.3 _C/W
RqJA Thermal Resistance, Junction to Ambient, Max. 100
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Shipping (Qty / Packing)
FCU600N65S3R0 FCU600N65S3R0 I−PAK
(DPAK3 STRAIGHT LEADS)
(Pb−Free / Halogen Free)
75 Units / Tube
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage VGS =0V, I
D= 1 mA, TJ=25_C650 − − V
VGS =0V, I
D= 1 mA, TJ= 150_C700 − − V
DBVDSS/DTJBreakdown Voltage Temperature
Coefficient
ID= 1 mA, Referenced to 25_C−0.66 −V/_C
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 1mA
VDS = 520 V, TC= 125_C−0.3 −
IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VGS =V
DS, ID= 0.12 mA 2.5 −4.5 V
RDS(on) Static Drain to Source On Resistance VGS =10V, I
D=3A −493 600 mW
gFS Forward Transconductance VDS =20V, I
D=3A −3.6 −S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz −465 −pF
Coss Output Capacitance −10 −pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V −127 −pF
Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V −17 −pF
Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID= 3 A, VGS =10V
(Note 4)
−11 −nC
Qgs Gate to Source Gate Charge −3−nC
Qgd Gate to Drain “Miller” Charge −4.9 −nC
ESR Equivalent Series Resistance f = 1 MHz −0.9 −W
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD = 400 V, ID=3A,
VGS =10V, R
g= 4.7 W
(Note 4)
−11 −ns
trTurn-On Rise Time −9−ns
td(off) Turn-Off Delay Time −29 −ns
tfTurn-Off Fall Time −14 −ns
SOURCE-DRAIN DIODE CHARACTERISTICS
ISMaximum Continuous Source to Drain Diode Forward Current − − 6 A
ISM Maximum Pulsed Source to Drain Diode Forward Current − − 15 A
VSD Source to Drain Diode Forward
Voltage
VGS =0V, I
SD =3A − − 1.2 V
trr Reverse Recovery Time VGS =0V, I
SD = 3 A,
dIF/dt = 100 A/ms
−198 −ns
Qrr Reverse Recovery Charge −1.6 −mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
TYPICAL PERFORMANCE CHARACTERISTICS Figure 3. On-Resislance Variation vs. Dra www.cnse
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.2
0.01
0.1
1
10
30
110
*Notes:
1. 250 ms Pulse Test
2. TC = 25°C
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
3
0.1
1
10
20
456789
*Notes:
1. VDS = 20 V
2. 250 ms Pulse Test
150°C
25°C
−55°C
0
0.0
0.4
0.8
1.2
VDS, Drain−Source Voltage [V]
ID, Drain Current [A]
VGS, Gate−Source Voltage [V]
ID, Drain Current [A]
*Note: TC = 25°C
VGS = 10 V
ID, Drain Current [A]
RDS(on),
Drain−Source−Resistance [W]
VGS = 20 V
36 912 0.0
0.001
0.01
0.1
1
10
100
0.5 1.0 1.5
*Notes:
1. VGS = 0 V
2. 250 ms Pulse Test
150°C
25°C
−55°C
VSD, Body Diode Forward Voltage [V]
IS, Reverse Drain Current [A]
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
Coss
Ciss
Crss
*Notes:
1 VGS = 0 V
2. f = 1 MHz
VDS, Drain−Source Voltage [V]
Capacitance [pF]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0
0
2
4
10 *Note: ID = 3 A
Qg, Total Gate Charge [nC]
VGS, Gate−Source Voltage [V]
VDS = 130 V
36 912
6
8
VDS = 400 V
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
Figure 9. Maximum Safe Operation Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. EOSS vs. Drain to Source Voltage
−50
0.8
0.9
1.0
1.1
1.2
0 50 100 150
*Notes:
1. VGS = 0 V
2. ID = 10 mA
TJ, Junction Temperature [5C]
BVDSS, [Normalized]
Drain−Source Breakdown Voltage
0.0
0.5
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
*Notes:
1. VGS = 10 V
2. ID = 3 A
TJ, Junction Temperature [5C]
RDS(on), [Normalized]
Drain−Source On−Resistance
1
0.01
0.1
1
10
30
Operation in This Area
is Limited by RDS(on)
10 100 1000
*Notes:
1. TC = 25°C
2. ID = 10 mA
3. Single Pulse
DC
VDS, Drain−Source Voltage [V]
ID, Drain Current [A]
10 ms
1 ms
100 ms
10 ms
25
0
2
4
6
8
50 75 100 125 150
TC, Case Temperature [5C]
ID, Drain Current [A]
0
0
0.5
1.0
1.5
2.0
2.5
3.0
130 260 390 520 650
VDS, Drain−Source Voltage [V]
EOSS [mJ]
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 12. Transient Thermal Response Curve
10−510−410−310−210−1100101
0.001
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE−DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 14. Resistive Figure 15. Unclamped Inductive S mi—
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Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
RL
VDS
VGS
VGS
RG
DUT
VDD
VDS
VGS
10%
90%
10%
90% 90%
ton toff
trtf
td(on) td(off)
Qg
Qgd
Qgs
VGS
Charge
VDS
VGS
RL
DUT
IG = Const.
VDD
VDS
RG
DUT
VGS
L
ID
tp
VDD
tp
Time
IAS
BVDSS
ID(t)
VDS(t)
EAS +1
2
@LIAS
2
Figure 16. Peak Diode Recovery dv/dl Test Circuit & Wavelor www.cnsemi.com a
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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
L
VDD
RG
ISD
VSD
+
−
VGS
Same Type
as DUT
− dv/dt controlled by RG
− ISD controlled by pulse period
Driver
VGS
(Driver)
ISD
(DUT)
VDS
(DUT) VSD
IRM
10 V
di/dt
VDD
IFM, Body Diode Forward Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
D+
Gate Pulse Width
Gate Pulse Period
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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DPAK3 (STRAIGHT LEADS)
CASE 369AP
ISSUE O
DATE 30 SEP 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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