Micro Commercial Co 的 MCQ4503 规格书

-M-C'C- ® 0 Features Pu‘sed Drain Current Power Drssipalion Ooeralma Junction Temperature T r 150 {HE \NCHES
Features
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A
C
B
D
SOP-8
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
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Parameter Symbol
N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 -30
Gate-Source Voltage VGS ±20 ±20
V
6.9 -6.3
Continuous Drain Current a
ID
5.5 -5
Pulsed Drain Current b IDM 20 -20
A
Power Dissipation PD1.4 W
Thermal Resistance from
Junction to Ambient
RJA 89 ℃/W
Operating Junction Temperature TJ150
Storage Temperature TSTG -55 ~+150
℃
Maximum ratings ( Ta=25℃ unless otherwise noted)
Notes :
a. These tests are performed with infinite heat sink.
b.Pulse width by Max.junction temperature.
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Equivalent Circuit
S1 G1 S2 G2
D1 D1 D2 D2
1234
5
6
78
•Marking:Q4503
MCQ4503
N and P-Channel
Enhancement Mode
Field Effect Transistor
A
B0.100 0.250
0.004 0.010
C1.350 1.550
0.053 0.061
D0.330 0.510
0.013 0.020
E0.170 0.250
0.007 0.010
F4.800 5.000
0.189 0.197
G
H5.800 6.200
0.228 0.244
J3.800 4.000
0.150 0.157
K0.400 1.270
0.016 0.050
θ0°8°
0°8°
DIM MM
INCHES
0.050（BSC） 1.270（BSC）
1.350 1.750
0.053 0.069
DIMENSIONS
MIN MAX MIN MAX NOTE
E
F
G
HJ
K
Ta=25℃
Ta=70℃
A
V
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Electrical characteristics (Ta=25 unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Static
VGS=0, ID =250µA N-Ch 30
Drain-source breakdown voltage V(BR)DSS
VGS=0, ID =-250µA P-Ch -30
V
VDS =VGS, ID =250µA N-Ch 1 1.5 3
Gate-threshold voltage VGS(th)
VDS =VGS, ID =-250µA P-Ch -1 -1.7 -3
V
N-Ch
Gate-body leakage IGSS DS
V =0V, VGS =±20V P-Ch ±100 nA
VDS =30V, VGS =0V N-Ch 1
Zero gate voltage drain current IDSS VDS =-30V, VGS =0V P-Ch -1 µA
VGS =10V, ID =6A N-Ch 10 28
VGS =-10V, ID =-6A P-Ch 16 36
VGS =4.5V, ID =4A N-Ch 14 42
Drain-source on-resistancecDS(on)
R
VGS =-4.5V, ID =-4A P-Ch 25 55
m
VDS =10V, ID =6A N-Ch
Forward transconductance gfs VDS =-10V, ID =-6A P-Ch 4 S
IS=1.7A,VGS=0V N-Ch 1.2
Diode forward voltagecSD V
IS=-1.7A,VGS=0V P-Ch -1.2 V
Dynamic
N-Ch 13.5
Total gate chargec Qg P-Ch 20
N-Ch 1.4
Gate-source charged Qgs P-Ch 2
N-Ch 4.7
Gate-drain charged Qgd
N-Channel
VDS =24V,VGS =4.5V,ID =6A
P-Channel
VDS =-24V,VGS =-4.5V,ID =-6A
P-Ch 7
nC
N-Ch 5
Turn-on delay timec td(on)
P-Ch 8
N-Ch 8
Rise timed tr P-Ch 7
N-Ch 18.5
Turn-off delay timed td(off) P-Ch 34
N-Ch 9
Fall timed tf
N-Channel
VDS=20V,RD=20, ID=1A,
VGS=10V,RG=3.3
P-Channel
VDS=-15V,RD=15, ID=-1A,
VGS=-10V,RG=3.3
P-Ch 26
ns
N-Ch 770
Input Capacitanced Ciss P-Ch 1380
N-Ch 80
Output Capacitanced Coss P-Ch 150
N-Ch 75
Reverse Transfer Capacitanced Crss
N-Channel
VDS =25V,VGS =0V,f =1MHz
P-Channel
VDS =-25V,VGS =0V,f =1MHz
P-Ch 140
pF
Notes :
c. Pulse Test : Pulse width300µs, duty cycle 2%.
d. Guaranteed by design, not subject to production testing.
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Revision:B2016/10/10
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
100 43
0
2
4
6
8
10
0 5 15 20
5
10
15
20
048121620
0
20
40
60
80
0123 54
0
5
10
15
20
Ta=25℃
Pulsed
Ta=25℃
Pulsed
IS —
— VSD
Ta=25℃
Pulsed
SOURCE CURRENT IS (A)
SOURCE TO DRAIN VOLTAGEVOLTA SD (V)
Ta=25℃
Pulsed
Ta=25℃
Pulsed
Transfer C
haracteristics
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
VGS=4.5V
VGS=10V
—— ID
RDS(ON)
ON-RESISTANCE RDS(ON) (m)
10
DRAIN CURRENT ID (A)
—— VGS
RDS(ON)
ID=6.0A
ON-RESISTANCE RDS(ON) (m)
GATE TO SOURCE VOLTAGE VGS (V)
VGS=2.0V
VGS=2.5V
VGS=10V
7.0V
5.0V
4.5V
VGS=3.0V
Output Charact
eristics
DRAIN CURRENT ID (A)
DRAIN TO SOURCE VOLTAGE VDS (V)
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Typical Characteristics
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Revision:B 2016/10/10
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.01
-0.1
-1
-10
-0 -4
-0
-2
-4
-6
-8
-10
-0 -5 -15 -20
10
15
20
25
30
35
-0 -4 -8 -12 -16 -20
0
20
40
60
80
-0 -5
-0
-5
-10
-15
-20
Ta=25℃
Pulsed
Ta=25℃
Pulsed
IS —
— VSD
Ta=25℃
Pulsed
SOURCE CURRENT IS (A)
SOURCE TO DRAIN VOLTAGEVOLTA SD (V)
Ta=25℃
Pulsed
Ta=25℃
Pulsed
Transfer C
haracteristics
DRAIN CURRENT ID (A)
-1 -2 -3
GATE TO SOURCE VOLTAGE VGS (V)
VGS=-4.5V
VGS=-10V
—— ID
RDS(ON)
ON-RESISTANCE RDS(ON) (m)
-10
DRAIN CURRENT ID (A)
—— VGS
RDS(ON)
ID=-6.0A
ON-RESISTANCE RDS(ON) (m)
GATE TO SOURCE VOLTAGE VGS (V)
VGS=-2.5V
VGS=-10V、-7.0V、-5.0V、-4.5V
VGS=-3.0V
Output Charact
eristics
DRAIN CURRENT ID (A)
-1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE VDS (V)
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Typical Characteristics
.MOCOCOZ
Device Packing
Part Number-TP Tape&Reel:4Kpcs/Reel
Ordering Information :
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
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risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.
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MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
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strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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