Vishay General Semiconductor - Diodes Division 的 V35PWM12 规格书

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V35PWM12
www.vishay.com Vishay General Semiconductor
Revision: 11-Feb-2019 1Document Number: 87653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.42 V at IF = 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Notes
(1) With infinite heatsink
(2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA
PRIMARY CHARACTERISTICS
IF(AV) 35 A
VRRM 120 V
IFSM 260 A
VF at IF = 35 A (TA = 125 °C) 0.68 V
TJ max. 175 °C
Package SlimDPAK (TO-252AE)
Circuit configuration Single
SlimDPAK (TO-252AE)
eSMP® Series
1
2
K
PIN 1 K
HEATSINK
PIN 2
click logo to get started
Available
Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V35PWM12 UNIT
Device marking code V35PWM12
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current (Fig. 1) IF(AV) (1) 35 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 260 A
Operating junction temperature range TJ (2) -40 to +175 °C
Storage temperature range TSTG -55 to +175 °C
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V35PWM12
www.vishay.com Vishay General Semiconductor
Revision: 11-Feb-2019 2Document Number: 87653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
Notes
(1) The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(3) Mounted on infinite heat sink; thermal resistance RJM - junction-to-mount
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum Instantaneous forward voltage
IF = 5.0 A
TA = 25 °C
VF (1)
0.51 -
V
IF = 17.5 A 0.72 -
IF = 35 A 0.96 1.05
IF = 5.0 A
TA = 125 °C
0.42 -
IF = 17.5 A 0.59 -
IF = 35 A 0.68 0.76
Reverse current
VR = 90 V TA = 25 °C
IR (2)
0.01 -
mA
TA = 125 °C 7 -
VR = 120 V TA = 25 °C - 1.2
TA = 125 °C 13 40
Typical junction capacitance 4.0 V, 1 MHz CJ2080 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V35PWM12 UNIT
Typical thermal resistance RJA (1)(2) 55 °C/W
RJM (3) 1.5
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V35PWM12-M3/I 0.20 I 4500 13" diameter plastic tape and reel
V35PWM12HM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel
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V35PWM12
www.vishay.com Vishay General Semiconductor
Revision: 11-Feb-2019 3Document Number: 87653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
10.0
20.0
30.0
40.0
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Mount Temperature (°C)
TM= 132 ƱC, RthJM = 1.5 ƱC/W
TA= 25 ƱC, RthJA = 55 ƱC/W
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
0 10203040
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TJ= 150 °C
TJ= 25 °C
TJ= 100 °C
TJ= 125 °C
TJ= 175 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TA= 150 °C
TA= 125 °C
TA= 100 °C
TA= 25 °C
TA= 175 °C
1
10
100
1000
10 000
0.1 1 10 100 1000
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
Junction to Mount
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V35PWM12
www.vishay.com Vishay General Semiconductor
Revision: 11-Feb-2019 4Document Number: 87653
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Resistance Junction to Ambient vs.
Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0
10
20
30
40
50
60
70
80
012345678910
Thermal Resistance (°C/W)
Copper Pad Areas (cm
2
)
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
S(cm2)
(9.40)
(8.60)
0.370
0.339
(6.72)
(6.48)
0.265
0.255
(6.32)
(6.08)
0.249
0.239
(0.70)
(0.30)
0.028
0.012
(0.41)
(0.25)
0.016
0.010
(1.40)
(1.20)
(0.20)
(0.00)
0.008
0.000
(1.40)
(1.00)
0.055
0.039
(5.70)
(5.30)
0.224
0.209
MIN.
0.240
(6.10)
MIN.
0.235
(5.97)
REF.
0.386
(9.80)
MIN.
0.075
(1.90)
MIN.
0.055
(1.40)
NOM.
0.090
(2.29)
0.055
0.047
0.090
(2.29) NOM. 0.180
(4.57) NOM.
(0.90)
(0.70)
0.035
0.028
NOM.
0.205
(5.20)
Mounting Pad Layout
SlimDPAK (TO-252AE)
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