Rohm Semiconductor 的 BD9E303EFJ-LB 规格书

I Over-Current Protection. I Short Circuit Protection. Thermal Shutdown Protection. I Under voltage Lockout Protection. I Soft Start. I HTSOP-JB package (Exposed Pad). Applications Industrial Equipment. I Power supply for FA's industrial device using 24v bass. I Consumer applications such as home appliance. Distribution type power supply system for 12V. and 24V. Typical Application Circuit BD9E303EFJ-LB Figure 1.Appllcatlon elrcu OPrcduct structure Silicon monolithic integrated circurl OThis product is not design www.mhmoom © 2015 ROHM 0o. Lid. All rights reserved. 1/28 Tszzzm - 14‘ am
○Product structure：Silicon monolithic integrated circuit. ○This product is not designed for protection against radioactive rays.
1/28 TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
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TSZ22111・14・001
Datashee
t
7.0V to 36V Input, 3.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9E303EFJ-LB
General Description
This is the product guarantees long time support in
Industrial market.BD9E303EFJ-LB is a synchronous buck
switching regulator with built-in power MOSFETs. It is a
current mode control DC/DC converter and features
high-speed transient response. Phase compensation can
also be set easily.
Features
Long Time Support Product for Industrial
Applications.
Synchronous single DC/DC converter.
Over-Current Protection.
Short Circuit Protection.
Thermal Shutdown Protection.
Under voltage Lockout Protection.
Soft Start.
HTSOP-J8 package (Exposed Pad).
Applications
Industrial Equipment.
Power supply for FA’s industrial device using 24V
bass.
Consumer applications such as home appliance.
Distribution type power supply system for 12V, and
24V.
Key Specifications
Input Voltage Range: 7.0V to 36V
Output Voltage Range: 1.0V to VIN×0.8V
Output Current: 3.0A (Max)
Switching Frequency: 300kHz (Typ)
High-Side MOSFET ON-Resistance: 90m (Typ)
Low-Side MOSFET ON-Resistance: 80m (Typ)
Standby Current: 0A (Typ)
Package W (Typ) x D (Typ) x H (Max)
HTSOP-J8 4.90mm x 6.00mm x 1.00mm
Typical Application Circuit
Figure 1. Application circuit
HTSOP-J8
2
3
6 4 7 5
1
8
VIN
24V
Enable
VIN
EN
COMP AGND PGND FB
SW
BOOT
10F
15kΩ
6800pF
30kΩ
7.5kΩ
0.1F
10μH
22μF×2
BD9E303EFJ-LB
VOUT
0.1F
Datasheet
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Pin Configuration
Pin Description(s)
Pin No Pin Name Description
1 BOOT
Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminal.
The voltage of this capacitor is the gate drive voltage of the high-side MOSFET.
2 VIN
Power supply terminal for the switching regulator and control circuit.
Connecting a 10µF and 0.1µF ceramic capacitor is recommended.
3 EN
Turning this terminal signal low-level (0.8V or lower) forces the device to enter the shut
down mode. Turning this terminal signal high-level (2.5V or higher) enables the device.
This terminal must be terminated.
4 AGND Ground terminal for the control circuit.
5 FB
Inverting input node for the gm error amplifier.
See page 18 on how to calculate the resistance of the output voltage setting.
6 COMP
Output of gm error amplifier, and input of PWM comparator. Connect phase
compensation components to this pin. See page 20 on how to calculate the resistance
and capacitance for phase compensation.
7 PGND Ground terminal for the output stage of the switching regulator.
8 SW
Switch node. This terminal is connected to the source of the high-side MOSFET and
drain of the low-side MOSFET. Connect a bootstrap capacitor of 0.1µF between this
terminal and BOOT terminal. In addition, connect an inductor considering the direct
current superimposition characteristic.
- E-Pad
Exposed pad. Connecting this to the internal PCB ground plane using multiple vias
provides excellent heat dissipation characteristics.
Figure 2. Pin assignment
SW
PGND
FB
B
OO
T
VIN
EN
AGND
COMP
7
8
6
5
3
4
2
1
(TOP VIEW)
E-Pad
Datasheet
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Block Diagram
Figure 3. Block diagram
VRE
F
SCP
TSD
UVLO
SLOPE
PWM
ERR
FB
COMP
SOFT
START
DRIVER
LOGIC
VIN
PGND
SW VOUT
BOOTREG BOOT
EN
AGND
3V 5V
VREG3
OSC
VREG
OVP
OCP
RCP
VIN
3
5
6
4
7
8
2
1
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Description of Block
VREG3
Block creating internal reference voltage 3V (Typ).
VREG
Block creating internal reference voltage 5V (Typ).
BOOTREG
Block creating gate drive voltage.
TSD
This is the thermal shutdown block. Thermal shutdown circuit shuts down the whole system if temperature exceeds 175°C
(Typ). When the temperature decreases, it returns to normal operation with hysteresis of 25°C (Typ).
UVLO
This is the under voltage lock-out block. IC shuts down when VIN is under 5V (Typ). The threshold voltage has a
hysteresis of 1.4V (Typ).
ERR
This circuit compares the feedback voltage at the output to the reference voltage. The output of this circuit is the COMP
terminal voltage and this determines the switching duty. Also, because of soft start during start-up, COMP terminal voltage
is controlled by internal slope voltage.
OSC
Block generating oscillation frequency.
SLOPE
This circuit creates a triangular wave from generated clock in OSC. The voltage converted from current sense signal of
high side MOSFET and the triangular wave is sent to PWM comparator.
PWM
This block determines the switching duty by comparing the output COMP terminal voltage of error amplifier and output of
SLOPE block.
DRIVER LOGIC
This is the DC/DC driver block. Input to this block is signal from PWM and output drives the MOSFETs.
SOFT START
This circuit prevents the overshoot of output voltage and In-rush current by forcing the output voltage to rise slowly, thus,
avoiding surges in current during start-up.
OCP
This block limits the current flowing in high side MOSFET for each cycle of switching frequency during over-current.
RCP
This block limits the current flowing in low side MOSFET for each cycle of switching frequency during over-current.
SCP
The short circuit protection block compares the FB terminal voltage with the internal standard voltage VREF. When the FB
terminal voltage has fallen below 0.7V (Typ) and remained in that state for 1.0msec (Typ), SCP activates and stops the
operation for 14msec (Typ) and subsequently initiates a restart.
OVP
Over voltage protection function (OVP) compares FB terminal voltage with the internal standard voltage VREF. When the
FB terminal voltage exceeds 1.30V (Typ) it turns MOSFET of output part MOSFET off. After output voltage drop it returns
with hysteresis.
Datasheet Vw EN
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
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TSZ22111•15•001
Absolute Maximum Ratings (Ta = 25°C)
Parameter Symbol Rating Unit
Supply Voltage VIN -0.3 to +40 V
EN Input Voltage VEN -0.3 to +40 V
Voltage from GND to BOOT VBOOT -0.3 to +45 V
Voltage from SW to BOOT VBOOT -0.3 to +7 V
FB Input Voltage VFB -0.3 to +7 V
COMP Input Voltage VCOMP -0.3 to +7 V
SW Input Voltage VSW -0.5 to VIN + 0.3 V
Allowable Power Dissipation(Note 1) Pd 2.76
(Note 1) W
Operating Junction Temperature Range Tj -40 to +150 C
Storage Temperature Range Tstg -55 to +150 C
(Note 1) HTSOP-J8:Derating in done 22mW/°C for operating Ta 25°C
(PCB size: 114.3 mm × 76.2 mm × 1.6 mm, copper foil area (on 2nd & 3rd layer and reverse side): 74.2 mm × 74.2 mm when mounted on 4-layer PCB)
Copper foil thickness: Front side and reverse side 70µm be used, 2nd & 3rd 35µm be used.
Caution1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Caution2: Reliability is decreased at junction temperature greater than 125C.
Recommended Operating Conditions (Ta= -40°C to +85°C)
Parameter Symbol Rating Unit
Min Typ Max
Supply Voltage VIN 7.0 - 36 V
Output Current IOUT 0 - 3 A
Output Voltage Range VRANGE 1.0 (Note 2) - VIN × 0.8 V
(Note 2) Please use it in output voltage setting of which output pulse width does not become 200nsec (Typ) or less. See the page 18 for how to calculate the
resistance of the output voltage setting.
Electrical Characteristics (Unless otherwise specified VIN=24V VEN=3V Ta=25°C)
Parameter Symbol
Limit Unit Conditions
Min Typ Max
Supply Current in Operating IOPR - 2.2 3.0
mA VFB = 1.1V
No switching
Supply Current in Standby ISTBY - 0 10
µA VEN = 0V
Reference Voltage (TJ =25°C) VFB 0.990 1.000 1.010 V
Reference Voltage (TJ =-40 to +150°C) VFB 0.965 1.000 1.035 V
FB Input Current IFB -1 0 1
µA VFB = 1.1V
Switching frequency FOSC 255 300 345 kHz
Maximum Duty ratio Maxduty 90 95 99
%
High-side FET on-resistance RONH - 90 -
m ISW = 100mA
Low-side FET on-resistance RONL - 80 -
m ISW = 100mA
Over Current limit ILIMIT - 5.2 - A
UVLO detection voltage VUVLO 4.7 5.0 5.3 V VIN falling
UVLO hysteresis voltage VUVLOHYS 1.2 1.4 1.6 V
EN high-level input voltage VENH 2.5 - VIN V
EN low-level input voltage VENL 0 - 0.8
V
EN Input current IEN 2.1 4.2 8.4
µA VEN = 3V
Soft Start time TSS 1.25 2.50 5.00
msec EN rising to
FB=0.85V
VFB : FB Input Voltage. VEN : EN Input Voltage.
Pd should not be exceeded.
Datasheet \ \\H \\\
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Typical Performance Curves
Figure 4. Operating Current vs Junction Temperature Figure 5. Stand-by Current vs Junction Temperature
Figure 6. FB Voltage Reference vs Junction Temperature Figure 7. FB Input Current vs Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50-25 0 25 50 75100125150
Temperature[°C]
Operating Current[mA]
VIN =7V
VIN =36V
VIN=24V
VIN =12V
0.0
2.0
4.0
6.0
8.0
10.0
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
Stand by Current[µA]
VIN =7V
VIN =24V
VIN =12V
VIN =36V
0.98
0.99
1.00
1.01
1.02
-50-25 0 25 50 75100125150
Temperature[°C]
Voltage Reference[V]
VIN =36V
VIN =24V
VIN =7V
VIN =12V
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
-50-250 255075100125150
Temperature[°C]
FB Input Current[µA]
VIN =24V
VFB =1.1V
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
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TSZ22111•15•001
Typical Performance Curves - continued
0
50
100
150
200
-50-25 0 25 50 75100125150
Temperature[°C]
Low Side MOSFET On Resistance[m]
0
50
100
150
200
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
High Side MOSFET On Resistance[m]
Figure 8. Switching Frequency vs Junction Temperature Figure 9. Maximum Duty vs Junction Temperature
Figure 10. High Side MOSFET ON - Resistance vs
Junction Temperature
Figure 11. Low Side MOSFET ON -Resistance vs
Junction Temperature
VIN =24V VIN =24V
250
260
270
280
290
300
310
320
330
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
Switching Frequency[kHz]
VIN =12V
VIN =7V
VIN =24V VIN =36V
93.0
93.5
94.0
94.5
95.0
95.5
96.0
-50-25 0 25 50 75100125150
Temperature[°C]
Maximum Duty[%]
VIN =7V VIN =36V
VIN =24V
VIN =12V
Datasheet // //
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
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TSZ22111•15•001
Figure 12. UVLO Threshold vs Junction Temperature
Typical Performance Curves - continued
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
VEN Input Voltage[V]
VIN Sweep down
VIN Sweep up
Figure 14. EN Threshold vs Junction Temperature
EN Sweep up
EN Sweep down
Figure 13. UVLO Hysteresis vs Junction Temperature
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
UVLO Hysteresis[V]
4.5
5.0
5.5
6.0
6.5
7.0
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
VIN Input Voltage[V]
VIN Sweep down
VIN Sweep up
EN=3V
Figure 15. EN Input Current vs Junction Temperature
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
EN Input Current[µA]
EN=3V
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Typical Performance Curves - continued
Figure 16. Soft Start Time vs Junction Temperature Figure 17. Efficiency vs Output Current
(VOUT = 3.3V, L = 10µH)
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Current[A]
Efficiency[%]
EN = 3V
VOUT = 3.3V
VIN = 24V
VIN = 7V
VIN = 12V
VIN = 36V
Figure 18. Efficiency vs Output Current
(VOUT = 5.0V, L = 10µH)
0
10
20
30
40
50
60
70
80
90
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Current[A]
Efficiency[%]
EN = 3V
VOUT = 5.0V
VIN = 12V
VIN = 24V
VIN = 7V
VIN = 36V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125 150
Temperature[°C]
Soft Start Time[ms]
VIN =24V
VIN =7V
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
www.rohm.com
TSZ22111•15•001
Typical Performance Curves - continued
Figure 19. Power Up (VIN = EN)
(VOUT = 5.0V)
Figure 20. Power Down (VIN = EN)
(VOUT = 5.0V)
Figure 21. Power Up (EN = 0V→5V)
(VOUT = 5.0V)
Figure 22. Power Down (EN = 5V→0V)
(VOUT = 5.0V)
VIN=20V/div
EN=20V/div
VOUT=5V/div
SW=20V/div
VIN=20V/div
EN=20V/div
VOUT=5V/div
SW=20V/div
Time=1ms/div Time=1ms/div
VIN=20V/div
EN=5V/div
VOUT=5V/div
SW=20V/div
VIN=20V/div
EN=5V/div
VOUT=5V/div
SW=20V/div
Time=1ms/div Time=1ms/div
‘ 1 mm WW WW
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
© 2015 ROHM Co., Ltd. All rights reserved. 13.Feb.2015 Rev.002
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TSZ22111•15•001
Typical Performance Curves - continued
Figure 23. VOUT Ripple
(VIN = 24V, VOUT = 5V, IOUT = 0A)
Figure 24. VOUT Ripple
(VIN = 24V, VOUT = 5V, IOUT = 3A)
Figure 25. VIN Ripple
(VIN = 24V, VOUT = 5V, IOUT = 0A)
Figure 26. VIN Ripple
(VIN = 24V, VOUT = 5V, IOUT = 3A)
SW=10V/div
VOUT=20mV/div
Time=2s/div
SW=10V/div
VOUT=20mV/div
Time=2s/div
VIN=200mV/div
SW=10V/div
Time=2s
/
div
VIN=200mV/div
SW=10V/div
Time=2s/div
i WW, I N‘ 1:
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
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TSZ22111•15•001
Typical Performance Curves - continued
Figure 27. Switching Waveform
(VIN = 12V, VOUT = 5V, IOUT = 3A)
Figure 28. Switching Waveform
(VIN = 24V, VOUT = 5V, IOUT = 3A)
IL=1.0A/div
SW=5V/div
Time=2s/div
IL=1.0A/div
SW=10V/div
Time=2s/div
Datasheet
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Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
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TSZ22111•15•001
Typical Performance Curves - continued
Figure 29. VOUT Line Regulation Figure 30. VOUT Line Regulation
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
6 9 12 15 18 21 24 27 30 33 36
VIN Input Voltage[V]
Output Voltage Change[%]
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
6 9 12 15 18 21 24 27 30 33 36
VIN Input Voltage[V]
Output Voltage Change[%]
IOUT=0A
IOUT=3A
IOUT=0A
IOUT=3A
Figure 31. VOUT Load Regulation
(VOUT = 3.3V)
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Current[A]
Output Voltage Change[%]
VIN = 24V
VOUT = 3.3V
Figure 32. VOUT Load Regulation
(VOUT = 5.0V)
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Current[A]
Output Voltage Change[%]
VIN = 24V
VOUT = 5.0V
VOUT = 3.3V VOUT = 5.0V
Datasheet a4 /? a4
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Datasheet
Datasheet
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TSZ22111•15•001
Typical Performance Curves – continued
-80
-60
-40
-20
0
20
40
60
80
100 1K 10K 100K 1M
Frequency[Hz]
Gain[dB]
-180
-135
-90
-45
0
45
90
135
180
Phase[deg]
-80
-60
-40
-20
0
20
40
60
80
100 1K 10K 100K 1M
Frequency[Hz]
Gain[dB]
-180
-135
-90
-45
0
45
90
135
180
Phase[deg]
Time=1ms/div
Time=1ms/div
VOUT=200mV/div
IOUT=1.0A/div
VOUT=200mV/div
IOUT=1.0A/div
phase
gain
phase
gain
VIN=12V
VOUT=3.3V
VIN=24V
VOUT=5V
Figure 35. Load Transient Response IOUT=1A – 2A
(V
IN=24V, VOUT=5V, COUT=Ceramic22F×2)
Figure 36. Load Transient Response IOUT=1A – 3A
(VIN=24V, VOUT=5.0V, COUT=Ceramic22F×2)
Figure 33.Closed Loop Response
(VIN=12V, VOUT=3.3V, IOUT=3A, COUT=Ceramic22F×2)
Figure 34. Closed Loop Response
(VIN=24V, VOUT=5V, IOUT=3A, COUT=Ceramic22F×2)
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15/28
Datasheet
Datasheet
BD9E303EFJ-LB
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TSZ22111•15•001
Function Description
1. Enable Control
The IC shutdown can be controlled by the voltage applied to the EN terminal. When EN voltage reaches 2.5V, the internal
circuit is activated and the IC starts up. Setting the shutdown interval (Low Level interval) of EN to 100µs or longer will
enable the shutdown control with the EN terminal.
Figure 37. Timing Chart with Enable Control
2. Protective Functions
The protective circuits are intended for the prevention of damages caused by unexpected accidents. Do not use
them for continuous protective operation.
(1) Short Circuit Protection (SCP)
The short circuit protection block compares the FB terminal voltage with the internal reference voltage VREF. When
the FB terminal voltage has fallen below 0.7V (Typ) and remained in that state for 1.0msec (Typ), SCP activates and
stops the operation for 14msec (Typ) and subsequently initiates a restart.
Table 1. Short Circuit Protection Function
EN pin FB pin Short circuit protection Switching Frequency
2.5V or higher
0.30V (Typ) FB
Enabled
75kHz (Typ)
0.30V (Typ)<FB0.7V (Typ) 150kHz (Typ)
FB>0.7V (Typ) 300kHz (Typ)
0.8V or lower - Disabled OFF
Figure 38. Short Circuit Protection (SCP) Timing Chart
VEN
0
VOUT
0
TSS
VENH
VENL
EN terminal
Output Voltage
t
t
VOUT×0.85
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TSZ22111•15•001
(2) Under Voltage Lockout Protection (UVLO)
The under voltage lockout protection circuit monitors the VIN terminal voltage.
The operation enters standby when the VIN terminal voltage is 5.0V (Typ) or lower.
The operation starts when the VIN terminal voltage is 6.4V (Typ) or higher.
Figure 39. UVLO Timing Chart
(3) Thermal Shutdown (TSD)
When the chip temperature exceeds Tj = 175C, the DC/DC converter output is stopped. The thermal shutdown
circuit is intended for shutting down the IC from thermal runaway in an abnormal state with the temperature
exceeding Tjmax = 150C. It is not meant to protect or guarantee the soundness of the application. Do not use the
function of this circuit for application protection design.
(4) Over Current Protection (OCP)
The over-current protection function observes the current flowing in upper-side MOSFET by switching cycle and
when it detects over flow current, it limits ON duty and protects by dropping output voltage.
(5) Reverse Current Protection (RCP)
The reverse-current protection function observes the current flowing in low-side MOSFET and when it detects over
flow current, it turns off the MOSFET.
(6) Over Voltage Protection (OVP)
Over voltage protection function (OVP) compares FB terminal voltage with internal standard voltage VREF. When the
FB terminal voltage exceeds 1.30V (Typ), it turns output MOSFETs off. When output voltage drops until it reaches the
hysteresis, it will return to normal operation.
VIN
0V
VOUT
High-side
MOSFET gate
FB
terminal
Soft start
hys
UVLO OFF
UVLO ON
Normal operation Normal operationUVLO
Low-side
MOSFET gate
MT BD9E303EFJ-LB Datasheet w, NH F ”a a;
17/28
Datasheet
Datasheet
BD9E303EFJ-LB
TSZ02201-0J3J0AJ00650-1-2
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www.rohm.com
TSZ22111•15•001
Application Example
Figure 40. Application Circuit
Table 2. Recommendation Component Valves
VIN 12V 24V
VOUT 1.8V 3.3V 5V 3.3V 5V
CIN
(N
ote
3
)
10F 10F 10F 10F 10F
CIN1 0.1F 0.1F 0.1F 0.1F 0.1F
CBOOT 0.1F 0.1F 0.1F 0.1F 0.1F
L 4.7H 10H 10H 10H 10H
R1 12k 30k 30k 30k 30k
R2 15k 13k 7.5k 13k 7.5k
R3 5.6k 10k 15k 10k 15k
C1 - - - - -
C2 15000pF 10000pF 6800pF 10000pF 6800pF
COUT (Note 4) Ceramic
22F×2
Ceramic
22F×2
Ceramic
22F×2
Ceramic
22F×2
Ceramic
22F×2
(Note 3) For capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7F.
(Note 4) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, crossover frequency
may fluctuate.
When selecting a capacitor, confirm the characteristics of the capacitor in its datasheet.
Also, in order to reduce output ripple voltage, low ESR capacitors such as ceramic type are recommended for output capacitor.
BOOT
VIN
EN
AGND
SW
PGND
COMP
FB
VOUT
VIN
CIN
CBOOT
1
2
3
4
7
6
5
8
C2
C1
COUT
R1
R2
R3
L
18/28
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TSZ22111•15•001
Selection of Components Externally Connected
Parameters required to design a power supply are as follows.
Parameter Unit Value Example
Input Voltage VIN 24 V
Output Voltage VOUT 5 V
Switching Frequency FOSC 300kHz(Typ)
Inductor ripple current IL 1.3A
ESR of the output capacitor RESR 10m
Output capacitor COUT 44F
Soft-start time TSS 2.5ms(Typ)
Max output current IOMAX 3A
1. Switching Frequency
Switching frequency is fixed to FOSC = 300kHz (Typ).
2. Output Voltage Set Point
The output voltage value can be set by the feedback resistance ratio.
[V]
1.
R
R
R
V
2
2
1
OUT
※ Minimum pulse range that can be produced at the output
stably through all the load area is 200nsec for
BD9E303EFJ-LB.
Use input/output condition which satisfies the following
method.
OS
C
IN
OUT
F
V
V
200nsec
≤
Figure 41. Feedback Resistor Circuit
3. Input capacitor configuration
For input capacitor, use a ceramic capacitor. For normal setting, 10F is recommended, but with larger value, input ripple
voltage can be further reduced. Also, for capacitance of input capacitor, take temperature characteristics, DC bias
characteristics, etc. into consideration to set minimum value to no less than 4.7F.
4. Output LC Filter
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to the
load. Selecting an inductor with a large inductance causes the ripple current IL that flows into the inductor to be small,
decreasing the ripple voltage generated in the output voltage, but it is not advantageous in terms of the load transient
response characteristic. Selecting an inductor with a small inductance improves the transient response characteristic but
causes the inductor ripple current to be large, which increases the ripple voltage in the output voltage, showing a trade-off
relationship. Here, select an inductance so that the size of the ripple current component of the inductor will be 20% to 50%
of the Max output current (3A).
Figure 42. Waveform of current through inductor Figure 43. Output LC filter circuit
IL
t
Inductor saturation current > IOUTMAX +IL /2
IOUTMAX
Average inductor current
IL
VOUT
L
COUT
VIN
Driver
Datasheet 1 L = Vow WV,” -Vm)X—= 10.15 10[ V m XF as: XAI I. m 7m as: 1 AV — BXCDW XFDSL. m = AIL XKRm + ) AV 1 8 x 44;: x 300k :M up T 55 C 1.0.411 {max} m = 1.3 x {10111 + —) = 25.31 -C =74.5
19/28
Datasheet
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TSZ22111•15•001
Now calculating with VIN = 24V, VOUT = 5V, switching frequency FOSC = 300kHz, IL is1.3A, inductance value
That can be used is calculated as follows:
* If the output voltage setting is larger than half of VIN please calculated as follows:
Also for saturation current of inductor, select the one with larger current than maximum output current added by 1/2 of
inductor ripple current IL.
Output capacitor COUT affects output ripple voltage characteristics. Select output capacitor COUT so that necessary ripple
voltage characteristics are satisfied.
Output ripple voltage can be expressed in the following method.
F
C
8
1
R
Δ
I
ΔV
OS
C
OU
T
ES
R
L
RP
L
With COUT = 44µF, RESR = 10m the output ripple voltage is calculated as
25.3
1
300
k
4
4
μ
8
1
10
m
1.
3
Δ
V
RP
L
[mV]
* When selecting the value of the output capacitor COUT, please note that the value of capacitor CLOAD will add up to
the value of COUT to be connected to VOUT.
Charging current to flow through the CLOAD, COUT and the IC startup, must be completed within the soft-start time this
charge. Over-current protection circuit operates when charging is continued beyond the soft-start time, the IC may not
start. Please consider in the calculation the condition that the lower maximum value capacitor CLOAD that can be
connected to VOUT (max) is other than COUT.
Inductor ripple current maximum value of start-up (ILSTART) can be expressed in the following method.
ILSTART = Output maximum load current(IOMAX) + Charging current to the output capacitor (ICAP) + IL
2
Charging current to the output capacitor (ICAP) can be expressed in the following method.
S
S
OUTLOA
D
OUT
CA
P
T
V
C
C
I
From the above equation, VIN = 24V, VOUT = 5V, L = 10H, IOMAX = 3.0A (max), switching frequency FOSC = 255kHz (min),
the output capacitor COUT = 44F, T SS = 1.25ms soft-start time (min), it becomes the following equation when calculating
the maximum output load capacitance CLOAD (max) that can be connected to VOUT.
F] [
74.
5
C
‐
V
T
/
2
Δ
I
‐
I
‐
4.2
5
max
C
OUT
OUT
S
S
L
OMA
X
LOA
D
Inductor ripple current maximum value of start-up (ILSTART) < Over Current Protection Threshold 4.25 [A](min)
H
1
0
10.1
5
Δ
I
F
V
1
V
‐
V
V
L
L
OS
C
I
N
OU
T
I
N
OU
T
≒
L
OS
C
I
N
Δ
I
F
4
V
L
Datasheet 211 X X Fm. X C RM = W M!" MA W — 211 x Rm, x F2
20/28
Datasheet
Datasheet
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TSZ22111•15•001
5. Phase Compensation
A current mode control buck DC/DC converter is a one-pole, one-zero system. The poles are formed by an error amplifier
and the one load and the one zero point is added by the phase compensation. The phase compensation resistor RCMP
determines the crossover frequency FCRS(15kHz (Typ)) where the total loop gain of the DC/DC converter is 0 dB. The high
value of this crossover frequency FCRS provides a good load transient response characteristic but inferior stability.
Conversely, specifying a low value for the crossover frequency FCRS greatly stabilizes the characteristics but the load
transient response characteristic is impaired.
(1) Selection of Phase Compensation Resistor RCMP
The phase compensation resistance RCMP can be determined by using the following equation.
][Ω
M
A
M
P
F
B
OUTCR
S
OUT
CM
P
G
G
V
C
F
V
2
π
R
(Typ))A/V (150 ctancetranscondu amplifier error the is
(Typ))(9A/V gain sense current the is
(Typ)) V (1.0 voltage reference feedback the is
ecapacitanc output the is
the is
voltage output the is
:here
μ
frequency crossover
MA
MP
FB
OUT
CRS
OUT
G
G
V
C
F
V
w
(2) Selection of phase compensation capacitance CCMP
For stable operation of the DC/DC converter, inserting a zero point under 1/9 of the zero crossover frequency cancels
the phase delay due to the pole formed by the load often, thus, providing favorable characteristics.
The phase compensation capacitance CCMP can be determined by using the following equation.
Z
CM
P
CM
P
F
R
2
π
1
C
[F]
inserted point Zero the is
where
　FZ
* In case CCMP calculation result above exceeds 15000pF, set the value of compensation capacitance CCMP for use
to15000pF. Setting too large CCMP value may cause startup failure, etc.
(3) Loop stability
In order to secure stability of DC/DC converter, confirm there is enough phase margin on actual equipment.
Under the worst condition, it is recommended to secure phase margin more than 45°.
In practice, the characteristics may vary depending on PCB layout, routing of wiring, types of parts to use and
operating environments (temperature, etc.).
Use gain-phase analyzer or FRA to confirm frequency characteristics on actual equipment. Contact the manufacturer
of each measuring equipment to check its measuring method, etc.
In case these measuring equipment are not available, there is a way to deduce phase margin degree from load
response.
Monitor the fluctuation of output voltage when unloaded condition is changed to maximum loaded condition. It can be
said that responsiveness is low when fluctuation is significant, and that phase margin degree is small when ringing
is made many times after the condition change. Normally, ringing is made 2 times or more as standard.
However, this method cannot confirm a quantitative phase margin degree.
Figure 44. Load Response
Inadequate phase margin
Adequate phase margin.
Load Maximum load
Output voltage
t
0
Datasheet Vw Vow x 0.85 V 2 'N as Vow UVLO release (6,4Vlyp,) vomxuss TSS ‘ X0195 0.8
21/28
Datasheet
Datasheet
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TSZ22111•15•001
6. Input voltage start-up
Figure 45. Input Voltage Start-up Time
Soft-start function is designed for the IC so that the output voltage will start according to the time it was decided internally.
After UVLO release, the output voltage range will be less than 80% of the input voltage at soft-start operation. Please be
sure that the input voltage of the soft-start after startup is as follows.
0.
0.8
5
V
V
OUT
IN
≥ [V]
7. Bootstrap capacitor
Bootstrap capacitor CBOOT shall be 0.1F. Connect a bootstrap capacitor between SW pin and BOOT pin.
For capacitance of Bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to
set minimum value to no less than 0.047F.
Datasheet MOS FET JE 00000000000000000000 00000000000000000000 Figure 47. Ex www.mhm.oom © 2015 ROHM 00.. Ha. All nghls reserved. TSZZZ111-15*001
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TSZ22111•15•001
PCB Layout Design
In buck DC/DC converters, a large pulsed current flows in two loops. The first loop is the one into which the current flows
when the High Side FET is turned on. The flow starts from the input capacitor CIN, runs through the FET, inductor L and
output capacitor COUT and back to ground of CIN via ground of COUT. The second loop is the one into which the current flows
when the Low Side FET is turned on. The flow starts from the Low Side FET, runs through the inductor L and output capacitor
COUT and back to ground of the Low Side FET via ground of COUT. Tracing these two loops as thick and short as possible
allows noise to be reduced for improved efficiency. It is recommended to connect the input and output capacitors, in
particular, to the ground plane. The PCB layout has a great influence on the DC/DC converter in terms of all of the heat
generation, noise and efficiency characteristics.
Accordingly, design the PCB layout with particular attention paid to the following points.
Provide the input capacitor as close to the VIN terminal as possible on the same plane as the IC.
If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist in heat dissipation
from the IC and the surrounding components.
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Trace to the inductor as
thick and as short as possible.
Provide lines connected to FB and COMP as far as possible from the SW node.
Provide the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the
input.
Figure 46. Current Loop of Buck Converter
Figure 47. Example of Sample Board Layout Pattern
L
CIN
COUT
CBOOT
C2
R3
VOUT
SW
VIN
GND
EN
R1
R2
Top Layer Bottom Layer
CIN
MOS FET
COUT
VOUT
L
VIN
Datasheet 40 an 20 ID o 25 5d 75 me 125 150 Temperalure Ta [“0] PCB. 4-layer PCB Mounling on ROHM slandard board based on JEDEC. Board specmcalion. FR4 (Glass-Epoxy). 114.3mm X 76.2 mm X16 mm Copper loll on lne fronl srde. ROHM recommended land pallem + wiring lo measure. (copper loll area on 2nd & 3rd layer and reverse side. 74.2 mm x 74.2 mm) Figure 48. Power Dissipalion (HTSOFLJB) l/O equivalence circuit(s) 2nd 8. 3rd 35pm be used. Condlllon. 91A : 45.2 “C l W Copper loll inickness: Fronl srde and reverse srde 70pm be used. 1.30m a.sw 3. EN gems EN 230k!) l7 m E in ZS F 7 294‘“) 5w ,3 146m L W Z: 7 7 ASND :pm 5 FB 6 COMP we FE l7 ”J cow b : E ii AGND 7 A (inn AGED AEND Figure 49 IIO Equivalem Circuil Chan www.mhmmm © 2015 ROHM 00.. Lid. All nghls reserved, Tszzzm 150m T5202201~0J3JOAJ00650-1-2 23/28 13.Feb.2015 Rev.002
23/28
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TSZ22111•15•001
Power Dissipation
Take into careful consideration that the power dissipation is within the allowable dissipation curve to design the PCB layout
and peripheral circuits.
HTSOP-J8
Mounting on ROHM standard board based on JEDEC.
Board specification: FR4 (Glass-Epoxy), 114.3mm × 76.2 mm ×1.6 mm
Copper foil on the front side: ROHM recommended land pattern +
wiring to measure.
PCB: 4-layer PCB
(copper foil area on 2nd & 3rd layer and reverse side,
74.2 mm × 74.2 mm)
Copper foil thickness: Front side and reverse side 70µm be used,
2nd & 3rd 35µm be used.
Condition: JA = 45.2 °C / W
I/O equivalence circuit(s)
1. BOOT 8. SW 3. EN
5. FB 6. COMP
Figure 49. I/O Equivalent Circuit Chart
Figure 48. Power Dissipation (HTSOP-J8)
BOOTREG
PGND
BOOT
SW
REG
VIN
3.0
4.0
Temperature:Ta [°C]
1.0
2.0
0
0 25 50 75 100 125 150
2.76W
Power dissipation:Pd [W]
Datasheet
24/28
Datasheet
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TSZ22111•15•001
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size
and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
Pm A D “ Pm A fp‘ P‘ D—rCI-n N N E N N t Parasmc X ;Elements ‘ P Subsnale ’ Z 1: (3ND Parasmc Elements Datasheet TranswserPN) Pm B """ \ Parasmc P Subsnale /‘ E‘Emems V 1: GND GND 7 7 GND Parasmc N Regen Elements closurby
25/28
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TSZ22111•15•001
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure 50. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
BD9E30 Datasheet Ordering B % Part Part Marking D HTS Part Number Marking LOT Number O<\ ipln="" mark="" www.mhmmm="" ©="" 2015="" rohm="" co="" tszzzm="" 150m="">
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TSZ22111•15•001
Ordering Information
B D 9 E 3 0 3 E F J - L B H 2
Part Number
Package
EFJ: HTSOP-J8
Product class
LB: for Industrial applications
Packaging and forming specification
H2: Embossed tape and 18cm reel
(Quantity : 250pcs)
B D 9 E 3 0 3 E F J - L B E 2
Part Number
Package
EFJ: HTSOP-J8
Product class
LB: for Industrial applications
Packaging and forming specification
E2: Embossed tape and 32.8cm reel
(Quantity : 2500pcs)
Marking Diagrams
HTSOP-J8 (TOP VIEW)
D9E303
Part Number Marking
LOT Number
1PIN MARK
Datasheet OMAX \ . 0:0, 4. 910' 1 Maxfi, 25 include,RURR) 9.2) 8 7 6 5 0,3510 05 1 2 a 4 n. 545 ~1FIN MARK t t H; i i :12! t ,7 _t_ _t_ g t t f _1V 27 o x V e . c: D. «740. 08h: < tape="" and="" rest="" information=""> (2. 4) 70 as, 42 o m t5 n. 08M (UNIT‘mm) PKG HTSDP Js Drawlni No.|EX169*5002*2 Tape Embossed carher tape Quahttty E2 2500pcs / H2 250.335 Dtrectton of feed The direction Is the pm 1 of product Is at the upper left when you hotd reet on the left hand and you putl out the tape on the right hand
27/28
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TSZ22111•15•001
Physical Dimension, Tape and Reel Information – continued
Package Name HTSOP-J8
Datasheet 13.Feb.2015 002 New Release
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Revision History
Date Revision Changes
13.Feb.2015 002 New Release
Datasheet
Datasheet
Datasheet
Notice-SS Rev.004
© 2013 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Datasheet
Notice-SS Rev.004
© 2013 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.