Gate Drivers

Results: 2
Series
-µHVIC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeHigh-Side
Channel Type
IndependentSingle
Number of Drivers
12
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
10V ~ 18V10V ~ 20V
Logic Voltage - VIL, VIH
0.8V, 2.2V0.8V, 2.5V
Current - Peak Output (Source, Sink)
160mA, 240mA290mA, 600mA
High Side Voltage - Max (Bootstrap)
100 V200 V
Rise / Fall Time (Typ)
70ns, 30ns85ns, 40ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6
Supplier Device Package
8-SOICPG-SOT23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRS2005STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
29,018
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,500 : ¥3.21659
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200 V
70ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
PG-SOT23-6
IRS10752LTRPBF
IC GATE DRVR HIGH-SIDE SOT23-6
Infineon Technologies
21,892
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥3.03549
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
High-Side
Single
1
N-Channel MOSFET
10V ~ 18V
0.8V, 2.2V
160mA, 240mA
Non-Inverting
100 V
85ns, 40ns
-40°C ~ 125°C (TJ)
Surface Mount
SOT-23-6
PG-SOT23-6
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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.