8.7A (Ta) Single FETs, MOSFETs

Results: 11
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.onsemiVishay Siliconix
Series
-HEXFET®TrenchFET®TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V600 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.7V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
14mOhm @ 10.5A, 10V15.5mOhm @ 10.5A, 10V15.5mOhm @ 8.7A, 10V20mOhm @ 8A, 10V21mOhm @ 3A, 4.5V22mOhm @ 4.1A, 4.5V680mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)900mV @ 250µA1V @ 250µA (Min)2.5V @ 250µA3V @ 250µA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V16.5 nC @ 10 V46 nC @ 10 V48 nC @ 4.5 V49 nC @ 10 V50 nC @ 5 V55 nC @ 5 V
Vgs (Max)
±8V±12V±20V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 10 V1200 pF @ 30 V1600 pF @ 15 V1638 pF @ 15 V1931 pF @ 15 V
Power Dissipation (Max)
400mW950mW (Ta)1.5W (Ta)1.9W (Ta), 12.5W (Tc)2W (Ta), 40W (Tc)2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
6-WLCSP (1.48x0.98)8-SO8-SOICDFN2020M-6POWERDI3333-8TO-220FI(LS)
Package / Case
6-UDFN Exposed Pad6-XFBGA, WLCSP8-PowerVDFN8-SOIC (0.154", 3.90mm Width)TO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4401BDY-T1-E3
MOSFET P-CH 40V 8.7A 8SO
Vishay Siliconix
12,151
In Stock
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥6.94014
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
8.7A (Ta)
4.5V, 10V
14mOhm @ 10.5A, 10V
3V @ 250µA
55 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
6-DFN2020MD_View 2
PMPB12R7EPX
PMPB12R7EP - 30 V, P-CHANNEL TRE
Nexperia USA Inc.
7,445
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.25855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.7A (Ta)
4.5V, 10V
15.5mOhm @ 8.7A, 10V
2.5V @ 250µA
49 nC @ 10 V
±20V
1638 pF @ 15 V
-
1.9W (Ta), 12.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020M-6
6-UDFN Exposed Pad
PowerDI3333-8
DMP3036SFG-7
MOSFET P-CH 30V 8.7A PWRDI3333-8
Diodes Incorporated
7,817
In Stock
1,100,000
Factory
1 : ¥4.93000
Cut Tape (CT)
2,000 : ¥1.86102
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.7A (Ta)
5V, 10V
20mOhm @ 8A, 10V
2.5V @ 250µA
16.5 nC @ 10 V
±25V
1931 pF @ 15 V
-
950mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
8-SOIC
SI4401BDY-T1-GE3
MOSFET P-CH 40V 8.7A 8SO
Vishay Siliconix
12,464
In Stock
1 : ¥15.35000
Cut Tape (CT)
2,500 : ¥6.94014
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
8.7A (Ta)
4.5V, 10V
14mOhm @ 10.5A, 10V
3V @ 250µA
55 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PowerDI3333-8
DMP3036SFG-13
MOSFET P-CH 30V 8.7A PWRDI3333-8
Diodes Incorporated
2,874
In Stock
3,000
Factory
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.86104
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.7A (Ta)
5V, 10V
20mOhm @ 8A, 10V
2.5V @ 250µA
16.5 nC @ 10 V
±25V
1931 pF @ 15 V
-
950mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
6-WLCSP
PMCM6501UNEZ
MOSFET N-CH 20V 8.7A 6WLCSP
Nexperia USA Inc.
4,500
In Stock
1 : ¥4.68000
Cut Tape (CT)
4,500 : ¥1.78422
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
8.7A (Ta)
1.5V, 4.5V
21mOhm @ 3A, 4.5V
900mV @ 250µA
6.2 nC @ 4.5 V
±8V
1050 pF @ 10 V
-
400mW
150°C (TJ)
Surface Mount
6-WLCSP (1.48x0.98)
6-XFBGA, WLCSP
IRF7401TRPBF
MOSFET N-CH 20V 8.7A 8SO
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
8.7A (Ta)
2.7V, 4.5V
22mOhm @ 4.1A, 4.5V
700mV @ 250µA (Min)
48 nC @ 4.5 V
±12V
1600 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO
Vishay Siliconix
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
P-Channel
MOSFET (Metal Oxide)
40 V
8.7A (Ta)
4.5V, 10V
15.5mOhm @ 10.5A, 10V
1V @ 250µA (Min)
50 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
IRF7401PBF
MOSFET N-CH 20V 8.7A 8SO
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
20 V
8.7A (Ta)
2.7V, 4.5V
22mOhm @ 4.1A, 4.5V
700mV @ 250µA (Min)
48 nC @ 4.5 V
±12V
1600 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4401DY-T1-GE3
MOSFET P-CH 40V 8.7A 8SO
Vishay Siliconix
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
40 V
8.7A (Ta)
4.5V, 10V
15.5mOhm @ 10.5A, 10V
1V @ 250µA (Min)
50 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-220AB Full Pack
BFL4007
MOSFET N-CH 600V 8.7A TO220FI
onsemi
0
In Stock
Obsolete
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
8.7A (Ta)
10V
680mOhm @ 7A, 10V
5V @ 1mA
46 nC @ 10 V
±30V
1200 pF @ 30 V
-
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220FI(LS)
TO-220-3 Full Pack
Showing
of 11

8.7A (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.