Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedMicro Commercial Co
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
2A (Tj)3.8A (Ta)
Rds On (Max) @ Id, Vgs
70mOhm @ 3.8A, 10V280mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 4.5 V8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 15 V1008 pF @ 25 V
Power Dissipation (Max)
1.08W (Ta)1.2W
Supplier Device Package
SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP3098LQ-7
MOSFET P-CH 30V 3.8A SOT23-3
Diodes Incorporated
211,720
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.81749
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
70mOhm @ 3.8A, 10V
2.1V @ 250µA
8 nC @ 4.5 V
±20V
1008 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 23
SI2324A-TP
MOSFET N-CH 100V 2A SOT23
Micro Commercial Co
176,515
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71241
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
2A (Tj)
4.5V, 10V
280mOhm @ 2A, 10V
2V @ 250µA
4.8 nC @ 4.5 V
±20V
520 pF @ 15 V
-
1.2W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.