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PTM Library
eGaN® FET Reliability
更新日期： 2016-03-30
Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.
Duration: 5 minutes
eGaN-based Eighth Brick Converter
发布日期：2015-08-24
Review of the design specifications of a 500 W 1/8th brick converter
Duration: 5 minutes
eGaN Integrated GaN Power
发布日期：2015-06-19
eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Duration: 5 minutes
Driving eGaN FETs with the LM5113
发布日期：2012-10-16
The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
Duration: 15 minutes
Paralleling eGaN® FETs
发布日期：2012-04-26
Detailing the work done to make it as easy as possible to use eGaN FETs in power conversion applications.
Duration: 10 minutes
Second Gen Lead Free eGaN® FETs Overview
发布日期：2011-10-28
The new-generation is lead free and halogen free and has improved electrical performance.
Duration: 5 minutes
Driving eGaN® Power Transistors
发布日期：2010-10-11
EPC brings enhancement mode to GaN giving the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
Duration: 5 minutes
eGan® FET's Characteristics
发布日期：2010-10-06
The operation of EPC’s enhancement mode gallium nitride transistors.
Duration: 5 minutes
eGaN® Basics
发布日期：2010-09-27
The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.
Duration: 10 minutes
eGan® FETs for DC-DC Conversion
发布日期：2010-01-22
eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.
Duration: 5 minutes
