MHA100KN Preliminary~ 规格书

MHA100KN
MEMSIC MHA100KN Preliminary Page 1 of 6 4/4/2020
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High Performance
Low Power
Hall-Effect Sensor
MHA100KN
FEATURES
Low power CMOS process
Wide operation voltage range: 1.65~5.5V
Ultra-low power consumption, <5uA@1.8V
Good RF noise immunity
Omnipolar operation
Dual output, Unipolar Hall switch for N and S
-40C to +85C operation
RoHS compliant
DFN4 package with 1.0mmx1.4mmx0.37mm
APPLICATIONS
TWS headset
Smart meter
Cover switch
DESCRIPTION
Figure 1: Signal Path
Information furnished by MEMSIC is believed to be accurate and reliable.
However, no responsibility is assumed by MEMSIC for its use, or for any
infringements of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or
patent rights of MEMSIC.
MEMSIC, Inc.
One Technology Drive, Suite 325, Andover, MA 01810, USA
Tel: +1 978 738 0900 Fax: +1 978 738 0196
www.memsic.com
Pammeter Min Typ Max Units Supply Voltage (vpp) 1 s5 «a 5.5 v Supply Currenl 2-5 5-0 HA 740-85 “c 2,5 10,0 uA Power Down Currenl 1.0 nA Operallng Temperalure 740 as 0c Slorage Temperalure 755 125 0c wake Tim (Tame) 50 100 us Period (Twins) 50 100 ms Duly Cycle 0.05 % Oulpul High (va) lour=+0 5mA vepeo a vppro.1 vpp+o.i v Oulpul Low (Val) |out=70.5mA ,0 3 0.1 0.3 v Oulpul Currem 70.5 0.5 mA Magnelic Opening Pcinl (30p) 27 37 47 Gauss Magnelic Releasing Polnl law) 20 30 40 Gauss
MEMSIC MHA100KN Preliminary Page 2 of 6 4/4/2020
SPECIFICATIONS (Measurements @ 25 C, unless otherwise noted; VDD=1.8V unless otherwise specified)
Parameter Conditions Min Typ Max Units
Supply Voltage (VDD) 1.65 1.8 5.5 V
Supply Current
2.5 5.0 µA
-40~85 C 2.5 10.0 µA
Power Down Current 1.0 nA
Operating Temperature -40 85 C
Storage Temperature -55 125 C
Awake Tim (Tawake) 50 100 µs
Period (Tperiod) 50 100 ms
Duty Cycle 0.05 %
Output High (VOH) IOUT=+0.5mA VDD-0.3 VDD-0.1 VDD+0.1 V
Output Low (VOL) IOUT=-0.5mA -0.3 0.1 0.3 V
Output Current -0.5 0.5 mA
Magnetic Opening Point (BOP) 27 37 47 Gauss
Magnetic Releasing Point (BRP) 20 30 40 Gauss
Hysteresis Window (BHYS) 2 7 Gauss
KN Code Type Code Temp Pin NO. Pin Name Description 1 VDD Power supplier 2 VSS Connecxed to Ground 3 OUT2 S pole de‘ecxion ouxpul 4 OUT1 N pole de‘ec‘ion ouxpm age with 1.0mmx1.4mmx0.37 (Pfi ,_0 OUT XXXH UT 0,4 ‘—u°t dwa D P The be sy Rec of Fig Thi d be 0 mm 1.80 1.00 “0.554 TOP VIEW
MEMSIC MHA100KN Preliminary Page 3 of 6 4/4/2020
ORDERING GUIDE
MHA100KN
PIN DESCRIPTION
Caution: Electro Static Discharge (ESD) sensitive
device.
PACKAGE ILLUSTRATION
DFN4 package with 1.0mmx1.4mmx0.37mm size.
Figure 2: Package illustration
HARDWARE DESIGN CONSIDERATION
It is necessary to keep VDD voltage clean for best
noise performance. A low-ESR bypass cap is required
and recommended value is 0.1µF. It should be placed
close to the device as much as possible.
4 OUT11 VDD
3 OUT22 VSS
0.1¦ ÌF
VDD = 1.65~5.5V
GND
Output(N)
Output (S)
Figure 3: Connection diagram
LAND PATTERN
1. The device routing should be symmetric.
2. Recommended land pattern of PCB is shown in
Figure 3.
3. Thickness of stencil should be 0.1mm.
Unit: mm
4
1
3
2
TOP VIEW
1.80
0.22
0.40
0.50
0.55
0.75
1.00
Figure 4: Recommended land pattern
Pin NO.
Pin Name
Description
1
VDD
Power supplier
2 VSS Connected to Ground
3
OUT2
S pole detection output
4
OUT1
N pole detection output
Package type
Code
Type
N DFN package
Performance Grade
Code Temp
K -40 ~ 85C
The Hall Effect Magnetic Field, B Current. | Voltage, V If I is kextconstam. V varies irecfly with B N N B s B Sensor OUTN OUTS v0” H H vex Vm ‘L L‘ ‘>---VOl 0 Saw BonN N S Bops smso Magnetization Direction u (an) Ex_Z (am . n Package Surface Temperamre (C) 300 250 200 150 100 50 Max.260 s‘f‘
MEMSIC MHA100KN Preliminary Page 4 of 6 4/4/2020
THEORY OF OPERATION
This Hall switch is fully integrated CMOS IC. It output
high-low signal following magnetic field changing.
Normally it works with a magnet and detect the
magnet close and away.
Figure 5: Hall Effect
Figure 6: Output signals of OUTN and OUTS pins
Figure 7: Sensor and magnet
Figure 8: Field by magnet (different size and distance)
SOLDER REFLOW PROFILE
1. Reflow is limited by 2 times. Second reflow should
be applied after device has cooled down to room
temperature (25).
2. Recommended reflow profile for Pb free process is
shown in Figure 3. The time duration of peak
temperature (260) should be limited to 10
seconds.
3. Type 4 solder paste is recommended for a better
SMT quality.
Figure 9: Recommended solder reflow profile
MANUAL SOLDERING
1. Soldering/repairing MHA100 manually via solder
iron or heater gun is not recommended.
2. Avoid bending or torqueing the PCB after the
sensor is assembled.
Magnetic flux density
1.4oiA10 0.60 1.00 iA10 0.80 0.50 TOP VIEW 0.37 SIDE VIEW ePAD BOTTOM VIEW
MEMSIC MHA100KN Preliminary Page 5 of 6 4/4/2020
1
PIN 1 DOT
PIN 1 I.D.
TOP VIEW
SIDE VIEW
BOTTOM VIEW
1.40 ¡ À0.10
1.00 ¡ À0.10
0.02
0.100.27
0.37
0.60
0.80
4x 0.20
4x 0.20
4x 0.22
0.50
0.25
43
22
34
1
0.20
Sensor Center
ePAD
PACKAGE OUTLINE DIMENSION
Unit: mm
Figure 10: Mechanical package outline dimensions
Notes
a) Sensitive area located at the center of package within 0.3mm diameter circle.
b) ePAD can be tied to the VSS or Floating.
c) Unless otherwise specified, Tolerances is ±0.05mm.
(a fig <1) {}="" 6r="" 4,}="" (‘54="" l4—="" 350="" i="" i="" ii="" pw="" 1="" dot="">
MEMSIC MHA100KN Preliminary Page 6 of 6 4/4/2020
TAPE AND REEL PACKING
Products are put into carrier tape according to marking direction. The quantity for each full reel is 4000pcs per reel
with 7” lock reel. Please refer to Figure 6
Details for tape and reel packing as below:
a) MHA100 tape and reel carriers are in accordance with ANSI/EIA-481
b) Product pin 1 orientation: Upper Left
c) Tape and reels are NOT designed to be baked at high temperatures
d) Each tape and reel is typically dry packed in a moisture barrier bag (MSL1).
8.00
4.00
4.00
1.753.50
2.00 R0.75
R0.25
A A B
B
1.15
ã 0.50
0.20
1.60
ã
Section A-A
Section B-B
PIN 1 DOT
User direction of unreeling
Figure 11: Carrier tape dimension and device orientation