Vishay Siliconix 的 SIE832DF 规格书

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Vishay Siliconix
SiE832DF
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
www.vishay.com
1
N-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low Thermal Resistance Using Top-
Exposed PolarPAK® Package for Double-
Sided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
•VRM
• Point-of-Load
• Synchronous Rectification
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
ID (A)a
Qg (Typ.)
Silicon
Limit
Package
Limit
40
0.0055 at V
GS
= 10 V
103 50
25 nC
0.007 at V
GS
= 4.5 V
91 50
Package Drawing
www.vishay.com/doc?73398
Ordering Information: SiE832DF-T1-E3 (Lead (Pb)-free)
SiE832DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top ViewBottom View
Top surface is connected to pins 1, 5, 6, and 10
10
D S S G D
D S S G D
PolarPAK
1 432 5
67 89
D DSG
D
5 4 3 2 1
6 7 8 9 10
For Related Documents
www.vishay.com/ppg?74414
N-Channel MOSFET
G
D
S
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol
Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
103 (Silicon Limit)
A
50a (Package Limit)
TC = 70 °C 50a
TA = 25 °C 23.6b, c
TA = 70 °C 18.9b, c
Pulsed Drain Current IDM 80
Continuous Source-Drain Diode Current TC = 25 °C IS
50a
TA = 25 °C 4.3b, c
Single Pulse Avalanche Current L = 0.1 mH IAS 35
Avalanche Energy EAS 61 mJ
Maximum Power Dissipation
TC = 25 °C
PD
104
W
TC = 70 °C 66
TA = 25 °C 5.2b, c
TA = 70 °C 3.3b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
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Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
Vishay Siliconix
SiE832DF
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol
Typical Maximum Unit
Maximum Junction-to-Ambienta, b t ≤ 10 s RthJA 20 24
°C/W
Maximum Junction-to-Case (Drain Top)a
Steady State RthJC (Drain) 1 1.2
Maximum Junction-to-Case (Source)a, c RthJC (Source) 2.8 3.4
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V
VDS Temperature Coefficient ΔVDS/TJID = 250 µA 43.1 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ- 6.9
Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 1.5 2.2 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 40 V, VGS = 0 V 1µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain CurrentaID(on) V
DS ≥ 5 V, VGS = 10 V 25 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 14 A 0.0046 0.0055 Ω
VGS = 4.5 V, ID = 12 A 0.0058 0.007
Forward Transconductanceagfs VDS = 15 V, ID = 13.6 A 86 S
Dynamicb
Input Capacitance Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
3800
pF
Output Capacitance Coss 510
Reverse Transfer Capacitance Crss 160
Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 20 A 51 77
nC
VDS = 20 V, VGS = 4.5 V, ID = 20 A
25 38
Gate-Source Charge Qgs 12
Gate-Drain Charge Qgd 7
Gate Resistance Rgf = 1 MHz 1.1 1.7 Ω
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
45 70
ns
Rise Time tr 260 400
Turn-Off Delay Time td(off) 35 55
Fall Time tf55 85
Tur n - O n D e l ay Time td(on)
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
15 25
Rise Time tr 30 45
Turn-Off Delay Time td(off) 35 55
Fall Time tf10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C 50 A
Pulse Diode Forward CurrentaISM 80
Body Diode Voltage VSD IS = 10 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
85 130 ns
Body Diode Reverse Recovery Charge Qrr 110 170 nC
Reverse Recovery Fall Time ta64 ns
Reverse Recovery Rise Time tb21
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Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
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Vishay Siliconix
SiE832DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
20
40
60
80
0.0 0.4 0.81.2 1.6 2.0
VGS = 10 V thru 4 V
V
DS
- Drain-to-Source Voltage (V)
) A ( t n e r r u C n i a r D - ID
V
GS
= 3 V
020406080
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R)no(SD ( ecnatsiseR-nO
-)
0.003
0.004
0.005
0.006
0.007
0
.
008
0
2
4
6
8
10
0 102030405060
I
D
= 20 A
)V( e
g
atl
o
V ecruoS-ot-etaG
-
Q
g
- Total Gate Charge (nC)
V
SG
VDS = 32 V
VDS = 20 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
1.5 2.0 2.5 3.0 3.5 4.0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
V
GS
- Gate-to-Source Voltage (V)
) A ( t n e r r u C n i a r D - I
D
0
900
1800
2700
3600
4
5
00
0816 24 32 40
Crss
Ciss
Coss
V
DS
- Drain-to-Source Voltage (V)
) F p ( e c n a t i c a
p
a
C
-
C
0.6
0.8
1.0
1.2
1.4
1.6
1
.
8
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V, 4.5 V
T
J
- Junction Temperature (°C)
R)
n o (
S
D e c n a t s i
s
e R
-
n O -
) d e z i l a m r o N (
I
D
= 14 A
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Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
Vishay Siliconix
SiE832DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.9 1.0 1.1
V
SD
- Source-to-Drain Voltage (V)
) A ( t n e r r u C e c r u o S - I
S
1
10
100
TJ = 25 °C
TJ = 150 °C
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V )ht(
S
G)
V (
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
246810
I
D
= 14 A
V
GS
- Gate-to-Source Voltage (V)
R)no(SD e (Ω)cnatsiseR-nO ecruoS-ot-niarD -
T
A
= 25 °C
T
A
= 125 °C
0.006
0.004
0.002
0.008
0.010
0
.
012
0
30
5
0
10
20
)W
(
rewo
P
Time (s)
40
10 1000 1 0.1 0.01 100
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
)A
(
t
nerr
u
C
n
iar
D
-
I
D
0.1
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
1 ms
10 ms
100 ms
DC
1 s
10 s
0.1110
10
T
A
= 25 °C
Single Pulse
Limited by RDS(on)*
BVDSS
Limited
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Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
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Vishay Siliconix
SiE832DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
20
40
60
80
100
120
0 25 50 75 100 125 150
ID ) A ( t n e r r u C n i a r D -
T
C
- Case Temperature (°C)
Package Limited
Power Derating, Junction-to-Case
0
20
40
60
80
100
120
25 50 75 100 125 150
T
C
- Case Temperature (°C)
) W ( n o i t a p i s s i D r e w o P
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Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
Vishay Siliconix
SiE832DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74414.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
f
f
E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 55 °C/W
3. T
JM
- TA = PDMZthJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10-3 10-2 110-1
10-4
2
1
0.1
0.01
0.2
0.1
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
f
f
E
d e z i l a m r o N
e c n a d e p m I l a m r
e
h T
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Source
10-3 10-2 110-1
10-4
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n
e
i s n
a
r T
e v i t c e
E d
e z i
l a m r o
N
e c n a d e
p
m I l a m r e
h
T
0.02
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DSSGD
DSSGD
M3
M1
M2
M3
T2
T1
T3 T3
T4T5 T5
M4
QQ
Z
D
D1
A1
DETAIL Z
E1
E
c
A
QQ
VIEW A
VIEW A
K1
K4 K4
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P1
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H2H3
H4 b1b2
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54321
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DS SGD
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(Bottom View)
(Top View)
b5 b5 b5
Product datasheet/information page contain
links to applicable package drawing.
Package Information
Vishay Siliconix
Document Number: 73398
10-Jun-05
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1
PolarPAK (Option S)
— VISHAY. ('9 ECN 57510497Rev 5.137Jun705
Package Information
Vishay Siliconix
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Document Number: 73398
10-Jun-05
MILLIMETERS INCHES
Dim Min Nom Max Min Nom Max
A0.75 0.80 0.85 0.030 0.031 0.033
A1 0.00 −0.05 0.000 −0.002
b1 0.48 0.58 0.68 0.019 0.023 0.027
b2 0.41 0.51 0.61 0.016 0.020 0.024
b3 2.19 2.29 2.39 0.086 0.090 0.094
b4 0.89 1.04 1.19 0.035 0.041 0.047
b5 0.23 0.33 0.43 0.009 0.013 0.017
c0.20 0.25 0.30 0.008 0.010 0.012
D6.00 6.15 6.30 0.236 0.242 0.248
D1 5.74 5.89 6.04 0.226 0.232 0.238
E5.01 5.16 5.31 0.197 0.203 0.209
E1 4.75 4.90 5.05 0.187 0.193 0.199
H1 0.23 − − 0.009 − −
H2 0.45 −0.56 0.020 −0.022
H3 0.31 0.41 0.51 0.012 0.016 0.020
H4 0.45 −0.56 0.020 −0.022
K1 4.22 4.37 4.52 0.166 0.172 0.178
K4 0.24 − − 0.009 − −
M1 4.30 4.50 4.70 0.169 0.177 0.185
M2 3.43 3.58 3.73 0.135 0.141 0.147
M3 0.22 − − 0.009 − −
M4 0.05 − − 0.002 − −
P1 0.15 0.20 0.25 0.006 0.008 0.010
T1 3.48 3.64 4.10 0.137 0.143 0.150
T2 0.56 0.76 0.95 0.22 0.030 0.037
T3 1.20 − − 0.051 − −
T4 3.90 − − 0.154 − −
T5 0 0.18 0.36 0.000 0.007 0.014
Q0_10_12_0_10_12_
ECN: S−51049—Rev. B, 13-Jun-05
DWG: 5947
Note: Millimeters govern over inches
VISI-MYQ
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 73491
6Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
0.955
(0.038)
0.410
(0.016)
0.510
(0.020)
0.510
(0.020)
7.300
(0.287)
0.955
(0.038)
0.895
(0.035)
0.895
(0.035)
0.580
(0.023)
2.290
(0.090)
0.510
(0.020)
0.580
(0.023)
4.520
(0.178)
6.310
(0.248)
+
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
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