Vishay Siliconix 的 SI3454CDV 规格书

— VISHAYN V RoHS commm HALOGEN AAAAAAAA EDII iii? d P——.|
Vishay Siliconix
Si3454CDV
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
® Power MOSFET
• 100 % Rg Te sted
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
- Notebook PC
PRODUCT SUMMARY
VDS (V) RDS(on) ()ID (A)aQg (Typ.)
30
0.050 at VGS = 10 V 4.2
2.6
0.079 at VGS = 4.5 V 3.0
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 145 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.2
A
TC = 70 °C 3.3
TA = 25 °C 3.8b, c
TA = 70 °C 3.1b, c
Pulsed Drain Current IDM 20
Continuous Source-Drain Diode Current TC = 25 °C IS
1.25 A
TA = 25 °C 1.04b, c
Maximum Power Dissipation
TC = 25 °C
PD
1.5
W
TC = 70 °C 0.9
TA = 25 °C 1.25b, c
TA = 70 °C 0.8b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 5 s RthJA 80 100 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 70 85
Ordering Information: Si3454CDV-T1-E3 (Lead (Pb)-free)
Si3454CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
AVXX
Lot Tracea b ility
and Date Code
Part # Code
Y
Y
TSOP-6
Top View
6
4
1
2
3
5
3 mm
2.85 mm
D
D
D
D
S
G
N-Channel MOSFET
G
D
S
(1, 2, 5, 6)
(3)
(4)
— VISHAYa V
www.vishay.com
2
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
Vishay Siliconix
Si3454CDV
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient VDS/TJID = 250 µA 27.5 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ- 5.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 30 V, VGS = 0 V 1µA
VDS = 30 V, VGS = 0 V, TJ = 85 °C 10
On-State Drain CurrentaID(on) VDS = 5 V, VGS = 10 V 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = 10 V, ID = 3.8 A 0.041 0.050
VGS = 4.5 V, ID = 3.1 A 0.066 0.079
Forward Transconductance gfs VDS = 15 V, ID = 3.8 A 8S
Dynamicb
Input Capacitance Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
305
pFOutput Capacitance Coss 52
Reverse Transfer Capacitance Crss 27
Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 3.8 A 5.3 10.6
nC
VDS = 15 V, VGS = 4.5 V, ID = 3.8 A
2.6 5.2
Gate-Source Charge Qgs 1.2
Gate-Drain Charge Qgd 0.8
Gate Resistance Rgf = 1 MHz 0.44 2.2 4.4
Turn-O n D e l ay T i m e td(on)
VDD = 15 V, RL = 4.8
ID 3.1 A, VGEN = 10 V, Rg = 1
48
ns
Rise Time tr816
Turn-Off DelayTime td(off) 11 18
Fall Time tf714
Tur n -O n D e l ay T i me td(on)
VDD = 15 V, RL = 4.8
ID 3.1 A, VGEN = 4.5 V, Rg = 1
15 20
Rise Time tr12 18
Turn-Off DelayTime td(off) 816
Fall Time tf918
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current ISTC = 25 °C 1.25 A
Pulse Diode Forward CurrentaISM 20
Body Diode Voltage VSD IS = 3.1 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr
IF = 3.1 A, dI/dt = 100 A/µs
11.5 17.8 ns
Body Diode Reverse Recovery Charge Qrr 510nC
Reverse Recovery Fall Time ta7.6 ns
Reverse Recovery Rise Time tb3.9
— V VI SHAY“ \\/// //,—¢—
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
www.vishay.com
3
Vishay Siliconix
Si3454CDV
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Qg - Gate Charge
0
4
8
12
16
20
0.0 0.6 1.2 1.82.4 3.0
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
VGS = 10 V thru 5 V
VGS = 4 V
VGS = 3 V
0.00
0.03
0.06
0.09
0.12
0.15
04812 16 20
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0123456
ID = 3.8 A
VGS - Gate-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
VDS = 24 V
VDS = 15 V
Transfer Characteristics Curves vs. Temp.
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.6
1.2
1.8
2.4
3.0
01234
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
Crss
0
100
200
300
400
06121824 30
Ciss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
Coss
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
R
DS(on)
- On-Resistance
V
GS
= 10 V, I
D
= 3.8 A
V
GS
= 4.5 V, I
D
= 3.1 A
— VISHAYa V //
www.vishay.com
4
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
Vishay Siliconix
Si3454CDV
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.81.0 1.2
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
TJ = 25 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0.00
0.02
0.04
0.06
0.08
0.10
04812 16 20
TJ= 25 °C
TJ= 125 °C
ID=3.8A
0
2
4
6
8
10
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
ID - Drain Current (A)
100
1
0.1 1 10 100
0.01
10
0.1
TA= 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
Limited byR
DS(on)*
BVDSS
Limited
1ms
100 µs
— VISHAYN V
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
www.vishay.com
5
Vishay Siliconix
Si3454CDV
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
TC - Case Temperature (°C)
ID - Drain Current (A)
0
1
2
3
4
5
0 25 50 75 100 125 150
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
0 25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power (W)
Power Derating, Junction-to-Case
Power (W)
TA - Ambient Temperature (°C)
0.0
0.3
0.6
0.9
1.2
1.5
1.8
0 25 50 75 100 125 150
— VISHAYa V www vrshal Cum/ggg758507
www.vishay.com
6
Document Number: 68607
S10-1532-Rev. C, 19-Jul-10
Vishay Siliconix
Si3454CDV
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68607.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 110 100010-1
10-4 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1 Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10-- 3 10-- 2 01110-- 1
10-- 4
0.2
0.1
Duty Cycle = 0.5
1
0.1
0.01
Single Pulse
0.02
0.05
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED