onsemi 的 NDS0605 规格书

2002 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
NDS0605/D
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using ON Semiconductor’s
proprietary, high cell density, DMOS technology. This
very high density process has been designed to
minimize on-state resistance, provide rugged
and reliable performance and fast switching. They
can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
• −0.18A, 60V. RDS(ON) = 5 @ VGS = 10 V
Voltage controlled p-channel small signal switch
High density cell design for low RDS(ON)
High saturation current
G
D
S
SOT-23
D
SG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1) 0.18 A
Pulsed 1
Maximum Power Dissipation (Note 1) 0.36 W
PD
Derate Above 25°C 2.9 mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C
TL Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds 300 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
65D NDS0605 7’’ 8mm 3000 units
NDS0605
Off Characteristics ABVDss ATJ On Characteristics AVGsuw ATJ Gs D namic Characteristics
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –10 µA –60 V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = –10 µA,Referenced to 25°C –53 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA
VDS = –48 V,VGS = 0 V TJ = 125°C –500
µA
IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA,Referenced to 25°C 3 mV/°C
RDS(on) Static Drain–Source
On–Resistance
VGS = –10 V, ID = –0.5 A
VGS = –4.5 V, ID = –0.25 A
VGS = –10 V,ID = –0.5 A,TJ=125°C
1.0
1.3
1.7
5.0
7.5
10
ID(on) On–State Drain Current VGS = –10 V, VDS = – 10 V –0.6 A
gFS Forward Transconductance VDS = –10V, ID = – 0.2 A 0.07 0.43 S
Dynamic Characteristics
Ciss Input Capacitance 79 pF
Coss Output Capacitance 10 pF
Crss Reverse Transfer Capacitance
VDS = –25 V, V GS = 0 V,
f = 1.0 MHz
4 pF
RGGate Resistance VGS = –15 mV, f = 1.0 MHz 10
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 2.5 5 ns
tr Turn–On Rise Time 6.3 12.6 ns
td(off) Turn–Off Delay Time 10 20 ns
tfTurn–Off Fall Time
VDD = –25 V, ID = – 0.2 A,
VGS = –10 V, RGEN = 6
7.5 15 ns
Qg Total Gate Charge 1.8 2.5 nC
Qgs Gate–Source Charge 0.3 nC
Qgd Gate–Drain Charge
VDS = –48 V, ID = –0.5 A,
VGS = –10 V
0.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
0.18 A
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.5 A(Note 2) –0.8 –1.5 V
trr Diode Reverse Recovery Time 17 nS
Qrr Diode Reverse Recovery Charge
IF = –0.5A
diF/dt = 100 A/µs (Note 2) 15 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NDS0605
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0123456
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
VGS=-10V -4.5V
-3.5V
-3.0V
-6.0V
-4.0V
-2.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=-3.0V
-3.5V
-10V
-6.0V
-4.5V
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -0.5A
VGS = -10V
0
1
2
3
4
5
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -0.25A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
1.2
11.522.533.544.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -10V
0.0001
0.001
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS0605
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Typical Characteristics
0
2
4
6
8
10
00.40.81.21.62
Qg, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
ID = -0.5A VDS = -12V -24V
-48V
0
20
40
60
80
100
0 102030405060
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
DC
10s
1s
100ms
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 350oC/W
TA = 25oC
10ms
1ms
100us
0
1
2
3
4
5
0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 350oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P
(p
k
)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
NDS0605
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