Littelfuse Inc. 的 S8X5ECSx 规格书

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© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
The S8X5ECSx offers a high static dv/dt with a low turn off
(tq) time. It is specifically designed for GFCI (Ground Fault
Circuit Interrupter) and AFCI (Arc Fault Circuit Interrupter),
RCD (Residual Current Device) and RCBO (Residual Current
Circuit Breaker with Overload Protection) applications. All
SCR junctions are glass-passivated to ensure long term
reliability and parametric stability.
Description
Features
Absolute Maximum Ratings
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TC = 85°C 0.5 A
IT(AV) Average on-state current TC = 85°C 0.3 A
ITSM
Non repetitive surge peak on-state current
(Sine half wave, TJ initial = 25°C)
F= 50Hz 10 A
F= 60Hz 12 A
I2t I2t Value for fusing tp = 10 ms F = 50 Hz 0.5 A2s
di/dt Critical rate of rise of on-state current IG = 10mA TJ = 125°C 80 A/µs
IGM Peak Gate Current tp = 20 μs TJ = 125°C 0.5 A
PG(AV) Average gate power dissipation — TJ = 125°C 0.2 W
Tstg Storage junction temperature range — — -40 to 150 °C
TJOperating junction temperature range — — -40 to 125 °C
Main Features
Symbol Value Unit
IT(RMS) 0.5 A
VDRM /V
RRM 800 V
VDSM (tp = 50 μs) 1250 V
VRSM (tp = 50 μs) 900 V
IGT 20 to 100 μA
A
K
G
Schematic Symbol
• Thru-hole packages
• Surge current
capability < 20Amps
• Blocking voltage
( VDRM / VRRM )
capability - up to 800V
• Non-repetitive direct surge
peak off-state voltage
(VDSM) up to 1250V
• Non-repetitive reverse
surge peak off-state
voltage (VRSM) up to 900V
• High dv/dt noise immunity
• Improved turn-off time (tq)
• Sensitive gate for direct
microprocessor interface
• Halogen free and RoHS
compliant
S8X5ECSx RoHS
* TO92 with "GAK" pin output
% litlelfuse" 5
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Description Test Conditions Limit Value Unit
S8X5ECS S8X5ECS2
IGT DC Gate Trigger Current VD = 6V
RL = 100 Ω
Min. 20 20 μA
Max. 100 50 μA
VGT DC Gate Trigger Voltage VD = 6V
RL = 100 Ω Max. 0.8 V
VGRM Peak Reverse Gate Voltage IRG = 10μA Min. 8 V
IHHolding Current RGK = 1 KΩ
Initial Current = 20mA Max. 3 mA
dv/dt Critical Rate-of-Rise of
Off-State Voltage
TJ = 125°C
VD = 67% of VDRM
Exp. Waveform
RGK =1 kΩ
Min. 40 V/μs
VGD Gate Non-Trigger Voltage
VD = 1/2 VDRM
RGK =1 kΩ
TJ = 125°C
Min. 0.2 V
tqTurn-Off Time IT = 0.5A Max. 35 μs
tgt Turn-On Time
IG=10mA
PW = 15μsec
IT = 1.6A(pk)
Typ. 2.3 μs
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol Description Test Conditions Limit Value Unit
VTM Peak On-State Voltage 0.5A device ITM = 4A tp = 380 μs MAX. 1. 8 V
VT0 Threshold Voltage - MAX 1.03 V
RDDynamic Resistance - MAX 106 mΩ
IDRM / IRRM Off-State Current, Peak Repetitive TJ = 25°C MAX. 3 μA
TJ = 125°C MAX. 500 μA
Thermal Resistances
Symbol Description Test Conditions Value Unit
Rth(JC) Junction to case (AC) IT = 0.8A (RMS)
135 °C/W
Rth(j-a) Junction to ambient IT = 0.8A (RMS)
1150 °C/W
EV Series 0.5 Amp Sensitive SCRs
1. 60Hz AC resistive load condition, 100% conduction.
A . . [— lltleltuse 53:55:15 \ \ /
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
ij
)
ij)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-40-25 -105 20 35 50 65 80 95 110125
Ratio of VGT / VGT (TJ= 25
Junction Temperature (TJ) -- (
Figure 1: Normalized DC Gate Trigger Current For All
Quadrants vs. Junction Temperature
0.0
0.5
1.0
1.5
2.0
-40-25 -105 20 35 50 65 80 95 110125
Ratio of I
GT
/ I
GT
(T
J
= 25
ij
)
Junction Temperature (T
J
) -- ( ij)
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
ij
)
0.0
0.5
1.0
1.5
2.0
-40-25 -105 20 35 50 65 80 95 110125
Ratio of IH/ IH(TJ= 25
Junction Temperature (TJ) -- ( ij)
Figure 4: On-State Current vs. On-State
Voltage (Typical)
0
1
2
3
4
5
6
0.50.8 1.11.4 1.72.
0
Intantaneous On-state Current (I
T
) –
Amps
Instantaneous On-state Voltage (VT) –Volts
EV Series 0.5 Amp Sensitive SCRs
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
0
0.1
0.2
0.3
0.4
0.5
00.1 0.20.3 0.40.5
Average On-State Power
Dissipation [PD(AV)] -(Watts)
RMS On-state Current [I T(RMS)] -(Amps)
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
0.0 0.30
0.25
0.20
0.15
0.10 0.50
0.45
0.40
0.35
0.05
RMS On-state Current [IT(RMS)] - Amps
Maximum Allowable Case Temperature (TC) - oC
90
10 0
110
120
130
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
A I . % lltleltuse 53:55:15
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 7: Surge Peak On-State Current vs. Number of Cycles
Surge Current Duration - Full Cycle
110 100 1000
10
20
Peak Surge (Non-repetitive) On-State
Current (I
TSM
) – Amps .
0
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [IT(RMS)]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
Soldering Parameters
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))150°C
- Temperature Max (Ts(max))200°C
- Time (min to max) (ts)60 – 180 secs
Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max
TS(max) to TL - Ramp-up Rate 5°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Time (min to max) (ts)60 – 150 seconds
Peak Temperature (TP)260+0/-5 °C
Time within 5°C of actual peak Temperature (tp)20 – 40 seconds
Ramp-down Rate 5°C/second max
Time 25°C to peak Temperature (TP)8 minutes Max.
Do not exceed 280°C
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
re
h
eat
Ramp-up
R
am
p
-u
p
Ramp-down
R
amp-
d
o
w
EV Series 0.5 Amp Sensitive SCRs
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Physical Specifications
Terminal Finish 100% Matte Tin-plated.
Body Material UL Recognized compound meeting flammability
rating V-0.
Lead Material Copper Alloy
Reliability/Environmental Tests
Test Specifications and Conditions
AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC
voltage @ 125°C for 1008 hours
Temperature Cycling MIL-STD-750, M-1051,
1000 cycles; -55°C to +150°C; 15-min dwell-time
Temperature/Humidity EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85% rel humidity
UHAST JESD22-A118, 96 hours, 130°C, 85%RH
High Temp Storage MIL-STD-750, M-1031,1008 hours; 150°C
Low-Temp Storage 1008 hours; -40°C
Resistance to
Solder Heat MIL-STD-750 Method 2031
Solderability ANSI/J-STD-002, category 3, Test A
Lead Bend MIL-STD-750, M-2036 Cond E
Design Considerations
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
Dimensions – TO-92
Dimension Inches Millimeters
Min Max Min Max
A0.175 0.205 4.450 5.200
B0.170 0.210 4.320 5.330
C0.500 12.70
D0.135 3.430
E0.125 0.165 3.180 4.190
F0.080 0.105 2.040 2.660
G0.016 0.021 0.407 0.533
H0.045 0.055 1.150 1.390
I0.095 0.105 2.420 2.660
J0.015 0.020 0.380 0.500
A
G
H
I
F
E
J
D
F
C
B
T Measuring Point
C
Seating
Plane
Anode
Cathode
Gate
EV Series 0.5 Amp Sensitive SCRs
Packing Option
Part Number Marking Weight Packing Mode Base Quantity
S8X5ECS S8X5ECS 0.217G Bulk 2500
S8X5ECSRP S8X5ECS 0.217G Tape & Reel 2000
S8X5ECSAP S8X5ECS 0.217G Ammo Pack 2000
S8X5ECS2 S8X5ECS2 0.217G Bulk 2500
S8X5ECS2RP S8X5ECS2 0.217G Tape & Reel 2000
S8X5ECS2AP S8X5ECS2 0.217G Ammo Pack 2000
S8XiEc 8 xx E [E
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: BO.12/08/20
Thyristors
EV Series 0.8 Amp Sensitive SCRs
EV Series 0.5 Amp Sensitive SCRs
Part Numbering System
Current
X5: 0.5A
Sesitivity & Type
S: 100µA Sensitive SCR
Package Type
EC: TO-92 Center Anode
Package Type
Series
S: SCR Blank: Bulk Pack
RP: Reel Pack
AP:
Ammo Pack
S8X5
Voltage
8: 800V
EC Sxx
S2: 50µA Sensitive SCR
Part Marking System
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications
Flat down
25 Devices per fold
Gate
Cathode
Anode
Direction of Feed
Dimensions
are in inches
(and millimeters).
0.708
(18.0)
1.62
(41.2)
0. 5
(12.7)
0.1 (2.54)
0.2 (5.08)
0.236
(6.0 )
0.02 (0.5 )
1.85
(47.0)
13. 3
(338.0)
1.27
(32.2)
0.098 (2.5) MAX
12. 2
(310.0)
1.85
(47.0)
0.35 4
(9.0 )
0.157 DIA
(4.0)
Meets all
EIA-468-C Standards
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications
0.708
(18.0)
1.6
(41.0)
0. 5
(12.7) 0.1 (2.54)
0.2 (5.08)
0.236
(6.0)
0.02 (0.5 )
Direction of Feed
Dimensions
are in inches
(and millimeters).
1.9 7
(50.0)
14.17(360.0)
Flat up
1.2 6
(32.0)
0.098 (2.5) MAX
Gate Cathode
Anode
0.354
(9.0)
0.157 DIA
(4.0)
Meets all EIA-468-C Standards
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are
not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.