Vishay Siliconix 的 SI4434ADY 规格书

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Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 1Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 250 V (D-S) MOSFET
Marking code: 4848A
FEATURES
• ThunderFET® power MOSFET
100 % Rg tested
Material categorization
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•DC/DC converters
Boost converters
LED backlighting
PD switch
•Load switch
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 84 °C/W
d. TC = 25 °C
PRODUCT SUMMARY
VDS (V) 250
RDS(on) max. () at VGS = 10 V 0.150
RDS(on) max. () at VGS = 7.5 V 0.170
Qg typ. (nC) 8.6
ID (A) d4.1
Configuration Single
Top View
SO-8 Single
1
S
2
S
3
S
1
2
S
3
S
4
G
D
7
D
6
D
5
D
8
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and halogen-free Si4434ADY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 250 V
Gate-source voltage VGS ± 20
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
4.1
A
TC = 70 °C 3.3
TA = 25 °C 2.8 a, b
TA = 70 °C 2.3 a, b
Pulsed drain current (t = 100 µs) IDM 25
Continuous source-drain diode current TC = 25 °C IS
5
TA = 25 °C 2.4 a, b
Single pulse avalanche current L = 0.1 mH IAS 12
Single pulse avalanche energy EAS 7.2 mJ
Maximum power dissipation
TC = 25 °C
PD
6
W
TC = 70 °C 3.8
TA = 25 °C 2.9 a, b
TA = 70 °C 1.9 a, b
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient a, c t 10 s RthJA 36 43 °C/W
Maximum junction-to-foot (drain) Steady state RthJF 16 21
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Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 2Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 µA 250 - - V
VDS temperature coefficient VDS/TJID = 250 µA - 254 - mV/°C
VGS(th) temperature coefficient VGS(th)/TJ--6.9-
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 µA 2 - 4 V
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VDS = 250 V, VGS = 0 V - - 1 µA
VDS = 250 V, VGS = 0 V, TJ = 70 °C - - 10
On-state drain current aID(on) VDS 10 V, VGS = 10 V 10 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 2.8 A - 0.125 0.150
VGS = 7.5 V, ID = 2.7 A - 0.135 0.170
Forward transconductance agfs VDS = 10 V, ID = 2.8 A - 10 - S
Dynamic b
Input capacitance Ciss
VDS = 125 V, VGS = 0 V, f = 1 MHz
- 600 -
pFOutput capacitance Coss -65-
Reverse transfer capacitance Crss -2-
Total gate charge Qg
VDS = 125 V, VGS = 10 V, ID = 2 A - 10.9 16.5
nCVDS = 125 V, VGS = 7.5 V, ID = 2 A
- 8.6 12.9
Gate-source charge Qgs -2.7-
Gate-drain charge Qgd -2.9-
Output charge Qoss VDS = 125 V, VGS = 0 V - 30 45
Gate resistance Rgf = 1 MHz 0.5 2.3 4.6
Turn-on delay time td(on)
VDD = 125 V, RL = 54.4 , ID 2.3 A,
VGEN = 10 V, Rg = 1
-816
ns
Rise time tr-2235
Turn-off delay time td(off) -1830
Fall time tf-2235
Turn-on delay time td(on)
VDD = 125 V, RL = 54.4 , ID 2.3 A,
VGEN = 7.5 V, Rg = 1
-1020
Rise time tr-2240
Turn-off delay time td(off) -1830
Fall time tf-2550
Drain-Source Body Diode Characteristics
Continuous source-drain diode current ISTC = 25 °C - - 5 A
Pulse diode forward current ISM --25
Body diode voltage VSD IS = 2.3 A, VGS = 0 V - 0.8 1.2 V
Body diode reverse recovery time trr
IF = 2.3 A, di/dt = 100 A/µs, TJ = 25 °C
- 100 150 ns
Body diode reverse recovery charge Qrr - 356 550 nC
Reverse recovery fall time ta-65-
ns
Reverse recovery rise time tb-35-
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Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 3Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
5
10
15
20
25
012345
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 6 V
VGS = 4 V
VGS = 5 V
10
100
1000
10000
0.1
0.12
0.14
0.16
0.18
0.20
0 5 10 15 20 25
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 7.5 V VGS = 10 V
10
100
1000
10000
0
2
4
6
8
10
036912
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
V
DS
= 63 V
V
DS
= 125 V
V
DS
= 200 V
I
D
=2 A
10
100
1000
10000
0
5
10
15
20
25
0123456
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
300
600
900
0 50 100 150 200 250
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.5
1.0
1.5
2.0
2.5
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
VGS = 10 V, ID = 2.8 A
VGS = 7.5 V, 2.7 A
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Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 4Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
VGS(th) (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
10
100
1000
10000
0
0.1
0.2
0.3
0.4
246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 150 °C
0
30
10
20
Power (W)
Time (s)
1 60010010-1
10-210
5
25
15
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
I
DM
limited
Limited by
R
DS(on)
T
A
= 25 °C
Single pulse BVDSS limited
100 ms
10 ms
1 ms
100 µs
10 s, 1 s
DC
VISHAY. pmosmcnsuggomiwshamam www.v\shay,com/doc?91000
Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 5Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
10
100
1000
10000
0
1
2
3
4
5
0255075100125150
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
2nd line
0
0.5
1
1.5
2
0 25 50 75 100 125 150
Power (W)
TA - Ambient Temperature (°C)
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Si4434ADY
www.vishay.com Vishay Siliconix
S17-1737-Rev. A, 20-Nov-17 6Document Number: 76230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76230.
10-3 10-2 1 10 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10-3 10-2 11010-1
10-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
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Revision: 08-Feb-17 1Document Number: 91000
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