Vishay General Semiconductor - Diodes Division 的 VS-30ETU12-M3 规格书

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VS-30ETU12-M3
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Revision: 20-Nov-17 1Document Number: 95990
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Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
• Ultrafast and soft recovery
• Optimized forward voltage drop
• 175 °C maximum operating junction temperature
• Polyimide passivation
• Rugged design
• Good thermal performance
• Meets JESD 201 class 1A whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Ultrafast recovery rectifiers designed with optimized
performance of forward voltage drop, recovery time, and
soft recovery. Polyimide passivated, planar structure, and
the platinum doped life time control guarantee, ruggedness,
reliability characteristics, and solid value proposition for
efficiency and thermal performance.
These devices are intended for use in boost stage in the
AC/DC section of SMPS, high frequency output rectification
of battery charger, inverters for solar inverters, or as
freewheeling diodes in motor drive.
PRIMARY CHARACTERISTICS
IF(AV) 30 A
VR1200 V
VF at IF at 125 °C 2.05 V
trr 49 ns
TJ max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
Base cathode
2
13
Cathode Anode
1
3
2
3
2
2L TO-220AC
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 1200 V
Average rectified forward current IF(AV) TC = 100 °C, D = 0.50 30 A
Repetitive peak forward current IFRM 60 A
Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 240 A
Operating junction and storage temperature TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage VBR,
VR
IR = 500 μA 1200 - -
V
Forward voltage VF
IF = 30 A - 2.15 2.68
IF = 30 A, TJ = 125 °C - 2.05 2.45
Reverse leakage current IR
VR = VR rated - - 145 μA
TJ = 125 °C, VR = VR rated - - 320
Junction capacitance CTVR = 200 V - 29 - pF
Series inductance LSMeasured to lead 5 mm from package body - 8 - nH
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VS-30ETU12-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Nov-17 2Document Number: 95990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 49 -
nsTJ = 25 °C
IF = 30 A
dIF/dt = 100 A/μs
VR = 390 V
- 220 -
TJ = 125 °C - 356 -
Peak recovery current IRRM
TJ = 25 °C - 8.2 - A
TJ = 125 °C - 13.3 -
Reverse recovery charge Qrr
TJ = 25 °C - 900 - nC
TJ = 125 °C - 2388 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case RthJC --0.8
°C/WThermal resistance, junction to ambient RthJA Typical socket mount - - 54
Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth, and greased - - 0.4
Weight -0.2- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Maximum junction and storage
temperature range TJ, TStg -55 - 175 °C
Marking device Case style: 2L TO-220AC 30ETU12
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 25 °C
TJ= 175 °C
TJ= 125 °C
0.01
0.1
1
10
100
1000
0 200 400 600 800 1000 1200
IR- Reverse Current (μA)
VR- Reverse Voltage (V)
TJ= 175 °C
TJ= 125 °C
TJ= 25 °C
TJ= 150 °C
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VS-30ETU12-M3
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Revision: 20-Nov-17 3Document Number: 95990
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10
100
1000
0 200 400 600 800 1000 1200
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
80
90
100
110
120
130
140
150
160
170
180
0 5 10 15 20 25 30 35
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
rated VRapplied
DC
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30 35 40 45 50
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
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VS-30ETU12-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Nov-17 4Document Number: 95990
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 9 - Typical Stored Charge vs. dIF/dt
Fig. 10 - Typical Stored Charge vs. dIF/dt
Fig. 11 - Typical Reverse Current vs. dIF/dt
Fig. 12 - Typical Reverse Current vs. dIF/dt
50
100
150
200
250
300
0 100 200 300 400 500
trr (ns)
dIF/dt (A/μs)
50 A
15 A
30 A
TJ = 25°C
100
150
200
250
300
350
400
450
0 100 200 300 400 500
t
rr
(ns)
dI
F
/dt (A/μs)
50 A
15 A
30 A
TJ = 125°C
600
800
1000
1200
1400
1600
1800
0 100 200 300 400 500
Qrr (nC)
dIF/dt (A/μs)
50 A
15 A
30 A
TJ = 25°C
1500
2000
2500
3000
3500
4000
0 100 200 300 400 500
Qrr (nC)
dIF/dt (A/μs)
50 A
15 A
30 A
TJ = 125 °C
5
10
15
20
25
0 100 200 300 400 500
Irec (A)
dIF/dt (A/μs)
30 A
15 A
50 A
TJ = 25°C
10
15
20
25
30
35
0 100 200 300 400 500
Irec (A)
dIF/dt (A/μs)
30 A
15 A
50 A
TJ = 125 °C
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VS-30ETU12-M3
www.vishay.com Vishay Semiconductors
Revision: 20-Nov-17 5Document Number: 95990
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30ETU12-M3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96156
Part marking information www.vishay.com/doc?95391
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
2- Current rating 30 = 30 A
1- Vishay Semiconductors product
3- E = single diode
4- Package: T = TO-220AC
5- U = ultrafast recovery
6- Voltage rating (12 = 1200 V)
7
Device code
51 32 4 6 7
VS- 30 E T U 12 -M3
- Environmental digit:
-
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
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Outline Dimensions
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Revision: 06-Dec-17 1Document Number: 96069
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2L TO-220AC
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480".
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 Ø P 3.54 3.73 0.139 0.147
c1 0.36 0.56 0.014 0.022 4 Q 2.60 3.00 0.102 0.118
D 14.85 15.25 0.585 0.600 3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
E 10.11 10.51 0.398 0.414 3, 6
12
D
D1
L1
H1
Q
C
A
B
L
e1
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
(6)
(6)
(2)
(7)
(6)
(7)
View A - A
E1 (6)
D2 (6)
H1
Thermal pad
E
12
C
C
DD
2 x b22 x b
L1 (2)
Detail B
Detail B
(b, b2)
b1, b3
Section C - C and D - D
Base metal Plating
(4)
(4)
c1
c
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