Vishay General Semiconductor - Diodes Division 的 VS-VSK(C/D/E/J)91 Series 规格书

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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
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Revision: 18-Sep-2018 1Document Number: 94627
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AAP Gen 7 (TO-240AA)
Power Modules Standard Diodes, 100 A
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of ADD-A-PAK
module, combines the excellent thermal performances
obtained by the usage of exposed direct bonded copper
substrate, with advanced compact simple package solution
and simplified internal structure with minimized number of
interfaces.
FEATURES
High voltage
Industrial standard package
UL approved file E78996
Low thermal resistance
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
Up to 1600 V
High surge capability
Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
PRIMARY CHARACTERISTICS
IF(AV) 100 A
Type Modules - diode, high voltage
Package AAP Gen 7 (TO-240AA)
Circuit
configuration
Two diodes doubler circuit, two diodes
common cathode, two diodes common anode,
single diode
ADD-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV)
100 A
TC112 °C
IF(RMS) 157
A
IFSM
50 Hz 2020
60 Hz 2115
I2t50 Hz 20.41 kA2s
60 Hz 18.63
I2t204.1 kA2s
VRRM Range 400 to 1600 V
TStg -40 to +150 °C
TJ-40 to +150 °C
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 2Document Number: 94627
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 150 °C
mA
VS-VSK.91
04 400 500
10
06 600 700
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 100 A
112 °C
Maximum RMS forward current IF(RMS) 157
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
2020
t = 8.3 ms 2115
t = 10 ms 100 % VRRM
reapplied
1700
t = 8.3 ms 1780
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
20.41
kA2s
t = 8.3 ms 18.63
t = 10 ms 100 % VRRM
reapplied
14.44
t = 8.3 ms 13.18
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 204.1 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.76 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.89
Low level value of forward
slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 2.4
m
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 2.05
Maximum forward voltage drop VFM IFM = x IF(AV), TJ = 25 °C, tp = 400 μs square wave 1.55 V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse
leakage current IRRM TJ = 150 °C 10 mA
Maximum RMS insulation voltage VINS 50 Hz 3000 (1 min)
3600 (1 s) V
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 3Document Number: 94627
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction and storage temperature range TJ, TStg -40 to +150 °C
Maximum internal thermal resistance,
junction to case per leg RthJC DC operation 0.22
°C/W
Typical thermal resistance,
case to heatsink per module RthCS Mounting surface flat, smooth, and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
Nm
busbar 3
Approximate weight 75 g
2.7 oz.
Case style JEDEC®AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.91 0.057 0.068 0.087 0.12 0.177 0.045 0.073 0.093 0.123 0.178 °C/W
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 4Document Number: 94627
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Average forward current (A)
Maximum allowable case temperature (°C)
0 20406080100120
100
110
120
130
140
150
180°
120°
90°
60°
30°
RthJC (DC) = 0.22°C/W
Average forward current (A)
Maximum allowable case temperature (°C)
0 50 100 150 200
90
100
110
120
130
140
150
180°
120°
90°
60°
30°
RthJC (DC) = 0.22°C/W
DC
Average forward current (A)
Maximum average forward power loss (W)
020406080100120
0
20
40
60
80
100
120
140
160
180°
120°
90°
60°
30°
RMS limit
Per leg, Tj = 150°C
Average forward current (A)
Maximum average forward power loss (W)
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
180
200
180°
120°
90°
60°
30°
RMS limit
DC
Per leg, Tj = 150°C
Peak half sine wave forward current (A)
Number of equal amplitude half cycle current pulses (N)
110100
400
600
800
1000
1200
1400
1600
1800
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
Per leg
Peak half sine wave forward current (A)
Pulse train duration (s)
0.01 0.1 1
200
400
600
800
1000
1200
1400
1600
1800
2000
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration
Initial Tj = 15C
No Voltage Reapplied
Rated Vrrm reapplied
Per leg
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
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Revision: 18-Sep-2018 5Document Number: 94627
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Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Forward Power Loss Characteristics
Total RMS output current (A)
Maximum total forward power loss (W)
Maximum allowable ambient temperature (°C)
020 40 60 80 100 120 140 160
0
0
0
0
0
0
0
0
0
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
0 20406080100120140160
0
20
40
60
80
100
120
140
160
180
200
180°
(Sine)
VSK.91 Series
Per leg
Tj = 150°C
DC
Total output current (A)
Maximum total power loss (W)
020 40 60 80 100 120 140 160
RthSA = 0.2 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
Maximum allowable ambient temperature (°C)
0 50 100 150 200
0
100
200
300
400
500
600
700
180°
(sine)
180°
(rect)
2 x VSK.91 Series
single phase bridge connected
Tj = 150°C
Total output current (A) Maximum allowable ambient temperature (°C)
Maximum total power loss (W)
020 40 60 80 100 120 140 160
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
3 °C/W
0 50 100 150 200 250 300
0
100
200
300
400
500
600
700
800
900
120°
(rect)
3 x VSK.91 Series
three phase bridge connected
Tj = 150°C
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-2018 6Document Number: 94627
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Fig. 10 - Forward Voltage Characteristics
Fig. 11 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Note
To order the optional hardware go to www.vishay.com/doc?95172
Instantaneous forward voltage (V)
Instantaneous forward current (A)
0 0.51.01.52.02.53.0
1
10
100
1000
Tj = 25°C
Tj = 150°C
Per leg
- Module type
- Circuit configuration (see Circuit Configuration table)
- Current code (100 A)
- Voltage code (see Voltage Ratings table)
Device code KD91/16
1- Vishay Semiconductors product
2
3
4
5
521 43
VS-VS
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VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series
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Revision: 18-Sep-2018 7Document Number: 94627
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CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Two diodes doubler circuit D
Two diodes common cathode C
Two diodes common anode J
Single diode E
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95369
VSKD...
~
(1) (3)(2)
-+
1
23
+- -
VSKC...
(1) (3)(2)
1
23
-+
+
VSKJ...
(1) (3)(2)
1
23
VSKE...
1
23
-+
(3)(1)
(2)
VISHAYJ Outline Dimensions V t: mdmoduies@wshay.com
Document Number: 95369 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 11-Nov-08 1
ADD-A-PAK Generation VII - Diode
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
35 REF.
30 ± 0.5
(1.18 ± 0.020)
29 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7) REF.
6.7 ± 0.3 (0.26 ± 0.012)
24 ± 0.5
(1 ± 0.020)
1
2
3
4 5 7 6
80 ± 0.3 (3.15 ± 0.012)
92 ± 0.75 (3.6 ± 0.030)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
15 ± 0.5 (0.59 ± 0.020)
22.6 ± 0.2
(0.89 ± 0.008)
6.3 ± 0.2 (0.248 ± 0.008)
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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