Vishay General Semiconductor - Diodes Division 的 VB30100C 规格书

VISHAY. ® RoHS comvuANr HALoGEN FREE www vlshay com/doc’79991 2 ab‘e DwodesAmencas@\/wshay.com DwodesAswamwshaymm DwodesEuvoge®vlshamcom www.v\shay,com/doc?91000
VB30100C
www.vishay.com Vishay General Semiconductor
Revision: 20-Jun-2018 1Document Number: 87984
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
DESIGN SUPPORT TOOLS
FEATURES
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
IF(AV) 2 x 15 A
VRRM 100 V
IFSM 160 A
VF at IF = 15 A 0.63 V
TJ max. 150 °C
Package D2PAK (TO-263AB)
Circuit configuration Common cathode
1
2
K
D2PAK (TO-263AB)
TMBS
®
PIN 1
PIN 2
K
HEATSINK
VB30100C
click logo to get started
Available
Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30100C UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current (fig. 1) per device IF(AV)
30 A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 160 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode (1)
IF = 5 A
TA = 25 °C
VF
0.516 -
V
IF = 7.5 A 0.576 -
IF = 15 A 0.734 0.80
IF = 5 A
TA = 125 °C
0.455 -
IF = 7.5 A 0.522 -
IF = 15 A 0.627 0.68
Reverse current per diode (2)
VR = 70 V TA = 25 °C
IR
7.2 - μA
TA = 125 °C 8.0 - mA
VR = 100 V TA = 25 °C 65 500 μA
TA = 125 °C 20 35 mA
VISHAY. DwodesAmencasw/wshayxom DwodesAswaviwshaywm DwodesEuvogemusnauom www.v\shay,com/doc?91000
VB30100C
www.vishay.com Vishay General Semiconductor
Revision: 20-Jun-2018 2Document Number: 87984
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB30100C UNIT
Typical thermal resistance per diode RJC 2.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VB30100C-M3/4W 1.39 4W 50/tube Tube
TO-263AB VB30100C-M3/8W 1.39 8W 800/reel Tape and reel
Case Temperature (°C)
30
35
25
20
15
10
5
0
0 25 50 75 100 125 150
Resistive or Inductive Load
Average Forward Current (A)
0
024681012141618
2
4
6
8
10
12
14
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3 D = 0.5 D = 0.8
D = 1.0
D = t
p
/T t
p
T
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 125 °C
T
A
= 150 °C
T
A
= 25 °C
0.001
0.01
0.1
1
100
10
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
TA = 150 °C
TA = 125 °C
TA = 25 °C
VISHAY. DwodesAmencasmwshaywm DwodesAswa@wshay,com DwodesEuvogemusnauom www.v\shay,com/doc?91000
VB30100C
www.vishay.com Vishay General Semiconductor
Revision: 20-Jun-2018 3Document Number: 87984
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10
1000
100
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(B,J)30100C
D
2
PAK (TO-263AB)
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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