Vishay General Semiconductor - Diodes Division 的 V20WM100C-M3/I ~ 规格书

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V20WM100C-M3
www.vishay.com Vishay General Semiconductor
Revision: 04-Dec-13 1Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A
VRRM 100 V
IFSM 100 A
VF at IF = 10 A (TA = 125 °C) 0.64 V
TJ max. 150 °C
Package TO-252 (D-PAK)
Diode variation Dual common cathode
TO-252 (D-PAK)
AK
HEATSINK
A
V20WM100C
A
A
K
TMBS
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20WM100C UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current
(fig. 1)
per device
IF(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 100 A
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
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V20WM100C-M3
www.vishay.com Vishay General Semiconductor
Revision: 04-Dec-13 2Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width d 5 ms
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RTJA
(2) Free air, without heatsink
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 5 A TA = 25 °C
VF (1)
0.58 -
V
IF = 10 A 0.72 0.82
IF = 5 A TA = 125 °C 0.53 -
IF = 10 A 0.64 0.73
Reverse current per diode VR = 100 V TA = 25 °C IR (2) - 800 μA
TA = 125 °C 4 24 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20WM100C UNIT
Typical thermal resistance
per diode
RTJC
2.0
°C/Wper device 1.0
per device RTJA (1)(2) 65
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
V20WM100C-M3/I 0.38 I 2500/reel 13" diameter plastic tape and reel
0
2
4
6
8
10
12
14
16
18
20
22
24
0 25 50 75 100 125 150
Average Forward Rectified Current (A)
Case Temperature (°C)
RthJA=RthJC=1.0oC/W
RthJA=65oC/W
0
1
2
3
4
5
6
7
8
9
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
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V20WM100C-M3
www.vishay.com Vishay General Semiconductor
Revision: 04-Dec-13 3Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
= 150 °C
T
= 125 °C
T
= 100 °C
T
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
0.1
1
10
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
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V20WM100C-M3
www.vishay.com Vishay General Semiconductor
Revision: 04-Dec-13 4Document Number: 89978
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Note
•Conforms to JEDEC
® TO-252 variation AA except dimension “D”
SYMBOL INCHES MILLIMETERS
MIN. MAX. MIN. MAX.
A 0.086 0.094 2.19 2.38
A1 - 0.005 - 0.13
b 0.025 0.035 0.64 0.89
b2 0.033 0.045 0.84 1.14
b3 0.205 0.215 5.21 5.46
c 0.018 0.024 0.46 0.61
D 0.235 0.250 5.97 6.22
D1 0.205 - 5.21 -
E 0.250 0.265 6.35 6.73
E1 0.190 - 4.83 -
e 0.090 BSC. 2.29 BSC.
H 0.380 0.410 9.65 10.41
L 0.055 0.070 1.40 1.78
L2 0.020 BSC. 0.51 BSC.
L3 0.035 0.050 0.89 1.27
L4 0.025 0.039 0.64 1.01
T0° 8° 0° 8°
D
L3
L4
b3
b2 b
1.55 mm REF.
E
TO-252 (D-PAK)
A
c
H
A1
c
eSee detail A
- A -
0.002
0.05 mm
"
E1
D1 L2
L
θ
0.004
0.1 mm
"
Mounting Pad Layout
in inches (millimeters)
0.244
(6.2) MIN.
0.256
(6.5) MIN.
0.094
(2.4) MIN.
0.051
(1.3) MIN.
0.39 (9.9)
0.488 (12.4)
0.086 (2.19)
0.094 (2.39)
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