Vishay General Semiconductor - Diodes Division 的 VS-20CTQ0xx(PBF,-N3) 规格书

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VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 1Document Number: 94162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 10 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-20CTQ... center tap Schottky rectifier series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 10 A
VR35 V, 40 V, 45 V
VF at IF0.57 V
IRM max. 15 mA at 125 °C
TJ max. 175 °C
Diode variation Common cathode
EAS 13 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 20 A
VRRM Range 35 to 45 V
IFSM tp = 5 μs sine 1060 A
VF10 Apk, TJ = 125 °C (per leg) 0.57 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-
20CTQ035PbF
VS-
20CTQ035-N3
VS-
20CTQ040PbF
VS-
20CTQ040-N3
VS-
20CTQ045PbF
VS-
20CTQ045-N3 UNITS
Maximum DC
reverse voltage VR
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 145 °C, rectangular waveform 20
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
1060
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH 13 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2.0 A
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VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 2Document Number: 94162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
10 A TJ = 25 °C 0.64
V
20 A 0.76
10 A TJ = 125 °C 0.57
20 A 0.68
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
2mA
TJ = 125 °C 15
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg - 55 to 175 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 3.25
°C/W
Maximum thermal resistance,
junction to case per package DC operation 1.63
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
20CTQ035
20CTQ040
20CTQ045
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VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 3Document Number: 94162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
0 1.80.8 1.2
VFM - Forward Voltage Drop (V)
IF - Instantaneous Forward Current (A)
100
0.4 1.6
1000
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.2 0.6 1.0 1.4
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
525354515
0.0001
1000
10 20 30 40
TJ = 50 °C
TJ = 175 °C
TJ = 150 °C
TJ = 75 °C
TJ = 100 °C
TJ = 125 °C
TJ = 25 °C
1000
020 50
100
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
TJ = 25 °C
10 30 40
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1 10 100
0.001
Single pulse
(thermal resistance) Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
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VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 4Document Number: 94162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
145
015
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
155
170
165
180
150
160
175
105
20CTQ
RthJC (DC) = 3.25 °C/W
DC
9
0
015
4
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
510
1
2
3
5
7
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50 RMS limit
6
8
DC
1000
100 1000
t
p
- Square Wave Pulse Duration (μs)
I
FSM
- Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
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VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 25-Aug-11 5Document Number: 94162
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-20CTQ035PbF 50 1000 Antistatic plastic tube
VS-20CTQ035-N3 50 1000 Antistatic plastic tube
VS-20CTQ040PbF 50 1000 Antistatic plastic tube
VS-20CTQ040-N3 50 1000 Antistatic plastic tube
VS-20CTQ045PbF 50 1000 Antistatic plastic tube
VS-20CTQ045-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
035 = 35 V
040 = 40 V
045 = 45 V
Device code
62 43 5 7
20 C T Q 045 PbF
2- Current rating (20 = 20 A)
3- Circuit configuration
C = Common cathode
4- Package
T = TO-220
5- Schottky “Q” series
6- Voltage rating
7-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
1-Vishay Semiconductors product
Environmental digit
VS-
1
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Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AB
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
(7) Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6
A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6
A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355 T90° to 93° 90° to 93°
D2 11.68 12.88 0.460 0.507 6
13
2
D
D1
H1
Q13
2
C
C
DD
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
MM
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1 (2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1 (6)
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