Vishay Siliconix 的 SI5997DU-T1-GE3 规格书

— VISHAYN V RoH S :nqum macaw FREE ’9 G x °7 °7 w \ /\ 5 Ordering Information: 5:5997Dum-GE3 (Lead (Pm-nee and Ha‘ogen4v65) P-Channsfl MOSFET m www.v\shay.com/g§g773257
Vishay Siliconix
Si5997DU
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
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Dual P-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
PRODUCT SUMMARY
VDS (V) RDS(on) ()I
D (A) Qg (Typ.)
- 30
0.054 at VGS = - 10 V - 6a
4.8 nC
0.088 at VGS = - 4.5 V - 6a
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
Bottom View
PowerPAK ChipFET Dual
Ordering Information: Si5997DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
1
2
3
4
D
1
D
1
D
2
D
2
S
G
S
G
1
1
2
2
Marking Code
DF XXX
Lot Traceability
and Date Code
Part #
Code
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 6a
A
TC = 70 °C - 6a
TA = 25 °C - 5.1b, c
TA = 70 °C - 4.1b, c
Pulsed Drain Current (t = 300 µs) IDM - 25
Continuous Source-Drain Diode Current TC = 25 °C IS- 6a
TA = 25 °C - 1.9b, c
Maximum Power Dissipation
TC = 25 °C
PD
10.4
W
TC = 70 °C 6.7
TA = 25 °C 2.3b, c
TA = 70 °C 1.5b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e 260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, f t 5 s RthJA 43 55 °C/W
Maximum Junction-to-Case (Drain) Steady State RthJC 9.5 12
(TJ — VISHAYa V
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Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
Vishay Siliconix
Si5997DU
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 22 mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ 4.1
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.4 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 30 V, VGS = 0 V - 1 µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS - 5 V, VGS = - 10 V - 20 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 10 V, ID = - 3 A 0.045 0.054
VGS = - 4.5 V, ID = - 1 A 0.072 0.088
Forward Transconductanceagfs VDS = - 15 V, ID = - 3 A 7S
Dynamicb
Input Capacitance Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
430
pFOutput Capacitance Coss 90
Reverse Transfer Capacitance Crss 70
Total Gate Charge Qg
VDS = - 15 V, VGS = - 10 V, ID = - 5.1 A 9.5 14.5
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 5.1 A
4.8 7.5
Gate-Source Charge Qgs 1.6
Gate-Drain Charge Qgd 2.2
Gate Resistance Rgf = 1 MHz 2 8 16
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 3.7
ID - 4.1 A, VGEN = - 4.5 V, Rg = 1
35 70
ns
Rise Time tr25 50
Turn-Off Delay Time td(off) 17 35
Fall Time tf10 20
Tur n - O n D e l ay Time td(on)
VDD = - 15 V, RL = 3.7
ID - 4.1 A, VGEN = - 10 V, Rg = 1
10 20
Rise Time tr10 20
Turn-Off Delay Time td(off) 20 40
Fall Time tf10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 6 A
Pulse Diode Forward Current ISM - 25
Body Diode Voltage VSD IS = - 4.1 A, VGS = 0 V - 0.85 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
15 30 ns
Body Diode Reverse Recovery Charge Qrr 815nC
Reverse Recovery Fall Time ta10.5 ns
Reverse Recovery Rise Time tb4.5
— VISHAYN V
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
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Vishay Siliconix
Si5997DU
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS =10Vthru6V
VGS =4V
VGS =2V
VGS =5V
VGS =3V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0 5 10 15 20 25
VGS =10V
VGS =4.5V
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
0
2
4
6
8
10
0246810
ID=5.1A
VDS =15V
VDS =24V
VDS =7.5V
Qg - Total Gate Charge (nC)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
01234
TC= 125 °C
TC= 25 °C
TC= - 55 °C
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Crss
0
200
400
600
800
0 5 10 15 20 25 30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
ID=3A
VGS =4.5V
VGS =10V
TJ - Junction Temperature (°C)
(Normalized)
RDS(on) - On-Resistance
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Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
Vishay Siliconix
Si5997DU
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ= 25 °C
TJ= 150 °C
VSD - Source-to-Drain Voltage (V)
IS - Source Current (A)
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
ID= 250 μA
VGS(th) (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.03
0.06
0.09
0.12
0.15
0.18
0246810
TJ=25 °C
TJ= 125 °C
ID=3A
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
Power (W)
Time (s)
000110.10.010.001 10 100
Safe Operating Area, Junction-to-Ambient
— VISHAYm V
Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
www.vishay.com
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Vishay Siliconix
Si5997DU
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Package Limited
TC - Case Temperature (°C)
ID - Drain Current (A)
Power Derating
0
2
4
6
8
10
12
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
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Document Number: 67186
S10-2762-Rev. A, 29-Nov-10
Vishay Siliconix
Si5997DU
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67186.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3 10-2 000101110-1
10-4 100
0.2
0.1
0.05
0.02
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t1t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 105 °C/W
3. T
JM - T
A = PDM ZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.01
10-4 110-1
Single Pulse
0.02
0.05
0.1
0.2
10-2
10-3
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Package Information
www.vishay.com Vishay Siliconix
Revision: 21-Jul-14 1Document Number: 73203
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK® ChipFET® Case Outline
Note
• Millimeters will govern
DIM. MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.70 0.75 0.85 0.028 0.030 0.033
A1 0 - 0.05 0 - 0.002
b 0.25 0.30 0.35 0.010 0.012 0.014
C 0.15 0.20 0.25 0.006 0.008 0.010
D 2.92 3.00 3.08 0.115 0.118 0.121
D1 1.75 1.87 2.00 0.069 0.074 0.079
D2 1.07 1.20 1.32 0.042 0.047 0.052
D3 0.20 0.25 0.30 0.008 0.010 0.012
E 1.82 1.90 1.98 0.072 0.075 0.078
E1 1.38 1.50 1.63 0.054 0.059 0.064
E2 0.92 1.05 1.17 0.036 0.041 0.046
E3 0.45 0.50 0.55 0.018 0.020 0.022
e 0.65 BSC 0.026 BSC
H 0.15 0.20 0.25 0.006 0.008 0.010
K 0.25 - - 0.010 - -
K1 0.30 - - 0.012 - -
K2 0.20 - - 0.008 - -
K3 0.20 - - 0.008 - -
L 0.30 0.35 0.40 0.012 0.014 0.016
C14-0630-Rev. E, 21-Jul-14
DWG: 5940
D
E
H
E1
D1 K L
K1
E3
D3
Backside view of single pad
(5)(6)(7)(8)
(1) (2) (3) (4)
D(2)D(1) D(3) G(4)
D(8) D(7) D(6) S(5)
Z
C
A
be
A1
D2 D2
K3
L
E2
H
K2
Detail Z
Backside view of dual pad
GI(2)SI(1) S2(3) G2(4)
D1(7)D1(8) D2(6) D2(5)
Side view of single Side view of dual
Pin #1
indicator
VISHAY»
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 69949
10 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Dual
Recommended Minimum Pads
Dimensions in mm/(Inches)
Note: This is Flipped Mirror Image
Pin #1 Location is Top Left Corner
1.050
(0.041)
1.900
(0.075)
1.525
(0.060)
1.175
(0.046)
0.225
(0.009)
0.650
(0.026)
0.300
(0.012)
0.200
(0.008)
0.350
(0.014)
0.350
(0.014)
2.700
(0.106)
0.300
(0.012)
0.650
(0.026)
0.300
(0.012)
Return to Index
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Revision: 08-Feb-17 1Document Number: 91000
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