Vishay General Semiconductor - Diodes Division 的 MPG06-6.8 thru43A 规格书

— VISHAY. V
TMPG06-6.8 thru TMPG06-43A
Document Number 88404
22-Dec-05
Vishay General Semiconductor
www.vishay.com
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* Patent #'s
4,980,315
5,166,769
5,278,094
Case Style MPG06
Automotive Transient Voltage Suppressors
High Temperature Stability & High
Reliability Conditions
Major Ratings and Characteristics
V(BR) 6.8 V to 43 V
PPPM 400 W
PD1.0 W
IFSM 40 A
Tj max. 185 °C
Features
• Patented PAR® construction
• Available in Unidirectional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical ID less than 1.0 µA above 10 V rating
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
Telecommunication.
Mechanical Data
Case: MPG06, molded epoxy over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Parameter Symbol Limit Unit
Peak power dissipation with a 10/1000 µs waveform (1) (Fig. 1) PPPM Minimum 400 W
Peak pulse current with a 10/1000 µs waveform (1)(2) (Fig. 3) IPPM see next table A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) PD1.0 W
Peak forward surge current 8.3 ms single half sine-wave (2) IFSM 40 A
Maximum instatntaneous forward voltage at 25 A (2) VF3.5 V
Operating junction and storage temperature range TJ, TSTG - 65 to + 185 °C
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Document Number 88404
22-Dec-05
TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derated per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Device Type
Maximum
Breakdown Voltage
V(BR)(1) at IT (V) Test
Current
IT (mA)
Stand-off
Voltage
VWM (V)
Maximum
Reverse
Leakage
at VWM
ID (µA)
Reverse
Leakage
at VWM
TJ = 150 °C
ID (µA)
Peak
Pulse
Current
IPPM(2)
(A)
Maximum
Clamping
Voltage
at lPPM
VC (Volts)
Maximum
Te m p.
Coefficient
of V(BR)
(% / °C)
MIN MAX
TMPG06-6.8 6.12 7.48 10.0 5.50 300 1000 27.8 10.8 0.057
TMPG06-6.8A 6.45 7.14 10.0 5.80 300 1000 28.6 10.5 0.057
TMPG06-7.5 6.75 8.25 10.0 6.05 150 500 25.6 11.7 0.060
TMPG06-7.5A 7.13 7.88 10.0 6.40 150 500 26.5 11.3 0.061
TMPG06-8.2 7.38 9.02 10.0 6.63 50.0 200 24.0 12.5 0.065
TMPG06-8.2A 7.79 8.61 10.0 7.02 50.0 200 24.8 12.1 0.065
TMPG06-9.1 8.19 10.0 1.0 7.37 10.0 50.0 21.7 13.8 0.068
TMPG06-9.1A 8.65 9.55 1.0 7.78 10.0 50.0 22.4 13.4 0.068
TMPG06-10 9.00 11.0 1.0 8.10 5.0 20.0 26.7 15.0 0.073
TMPG06-10A 9.50 10.5 1.0 8.55 5.0 20.0 27.6 14.5 0.073
TMPG06-11 9.90 12.1 1.0 8.92 2.0 10.0 24.7 16.2 0.075
TMPG06-11A 10.5 11.6 1.0 9.40 2.0 10.0 25.6 15.6 0.075
TMPG06-12 10.8 13.2 1.0 9.72 1.0 5.0 23.1 17.3 0.076
TMPG06-12A 11.4 12.6 1.0 10.2 1.0 5.0 24.0 16.7 0.078
TMPG06-13 11.7 14.3 1.0 10.5 1.0 5.0 21.1 19.0 0.081
TMPG06-13A 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081
TMPG06-15 13.5 16.3 1.0 12.1 1.0 5.0 18.2 22.0 0.084
TMPG06-15A 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084
TMPG06-16 14.4 17.6 1.0 12.9 1.0 5.0 17.0 23.5 0.086
TMPG06-16A 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086
TMPG06-18 16.2 19.8 1.0 14.5 1.0 5.0 15.1 26.5 0.088
TMPG06-18A 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088
TMPG06-20 18.0 22.0 1.0 16.2 1.0 5.0 13.7 29.1 0.090
TMPG06-20A 19.0 21.0 1.0 17.0 1.0 5.0 14.4 27.7 0.090
TMPG06-22 19.8 24.2 1.0 17.8 1.0 5.0 12.5 31.9 0.092
TMPG06-22A 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092
TMPG06-24 21.6 26.4 1.0 19.4 1.0 5.0 11.5 34.2 0.094
TMPG06-24A 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094
TMPG06-27 24.3 29.7 1.0 21.8 1.0 5.0 10.2 39.1 0.096
TMPG06-27A 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096
TMPG06-30 27.0 33.0 1.0 24.3 1.0 5.0 9.2 43.5 0.097
TMPG06-30A 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097
TMPG06-33 29.7 36.3 1.0 26.8 1.0 5.0 8.4 47.7 0.098
TMPG06-33A 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098
TMPG06-36 32.4 39.6 1.0 29.1 1.0 5.0 7.7 52.0 0.099
TMPG06-36A 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099
TMPG06-39 35.1 42.9 1.0 31.6 1.0 5.0 7.1 56.4 0.100
TMPG06-39A 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100
TMPG06-43 38.7 47.3 1.0 34.8 1.0 5.0 6.5 61.9 0.101
TMPG06-43A 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101
VISHAY. TMPGGGVW , TM TMPGGGVB a , TMFGOGVQ 1A
TMPG06-6.8 thru TMPG06-43A
Document Number 88404
22-Dec-05
Vishay General Semiconductor
www.vishay.com
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Ordering Information
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Preferred P/N Unit Weight (g) Preferred Package Code Base Quantity Delivery Mode
TMPG06-6.8A-E3/54 0.218 54 5500 13" Diameter Paper Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
PPPM -PeakPulse Power (kW)
0.1
1.0
10
100
td - Pulse Width (sec.)
TMPG06-6.8- TMPG06-9.1A
TMPG06-10 - TMPG06-43A
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
100
75
50
25
0
0 25 50 75 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
01.0 2.0 3.0 4.0
tr = 10 µsec.
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 µsec. Waveform
as defined by R.E.A.
TJ = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
10
100
1000
10000
101.0 100 200
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
Measured at Stand-off
Voltage VWM
C
J
, Junction Capacitance (pF)
V(BR) - Breakdown Voltage (V)
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www.vishay.com
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Document Number 88404
22-Dec-05
TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
Package outline dimensions in inches (millimeters)
Figure 5. Power Derating Curve
L = 0.375" (9.5 mm)
Lead Lengths
P
D
, Power Dissipation (W)
TL - Lead Temperature (°C)
60 Hz
Resistive or
Inductive Load
1.00
0.75
0.50
0.25
0
0 25 50 75 100 125 150 175 200
Figure 6. Maximum Non-Repetitive Forward Surge Current
1 10 100
10
100
TJ = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.125 (3.18)
0.115 (2.92)
0.100 (2.54)
0.090 (2.29)
0.025 (0.635)
0.023 (0.584)
DIA
DIA.
Case Style MPG06
— VISHAYe V
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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