Renesas Electronics Corporation 的 RKZ6.8Z4MFAKT 规格书

:{ENESAS Laser Mark Package Name N5 VSON-S Arrangement 1 2 1 2 |_\ W 7‘ fl 177 (Momh code) r/ 3 N5* 3 1 Camode ‘ """" 2 Camode U LI U U U U 3 Camode 5 4 3 5 4 3 4 Anode (Top View) (Top View) 5 Camode Assemble re JAPAN MALAVSIA Monlh ol Manulaclure JA A 1 July G B 2 August H C 3 September J RENESAS
Rev.1.00 Feb 22, 2006 page 1 of 4
RKZ6.8Z4MFAKT
Silicon Planar Zener Diode for Surge Absorption
REJ03G1351-0100
Rev.1.00
Feb 22, 2006
Features
• RKZ6.8Z4MFAKT has four devices in a monolithic, and can absorb surge.
• Low capacitance (C = 4.0 pF Typ) and can protect ESD of signal line.
• VSON-5 Package is suitable for high density surface mounting.
Ordering Information
Type No. Laser Mark Package Name Package Code
RKZ6.8Z4MFAKT N5 VSON-5 PUSN0005ZB-A
Pin Arrangement
1. Cathode
2. Cathode
3. Cathode
4. Anode
5. Cathode
12
543
(Top View)
12
543
N5 ∗
(Top View)
(Month code)
Month Code
Assemble Assemble
Month of Manufacture JAPAN MALAYSIA
Month of Manufacture JAPAN MALAYSIA
January A 1 July G 7
February B 2 August H 8
March C 3 September J 9
April D 4 October K W
May E 5 November L X
June F 6 December M Y
C — 4.0 4.5 pF VR:0V,f:1 MHZ I'd — — 30 {2 \z : 5 mA — 8 — — kV C:150pF,R:330{2 reverse direchon 10 pm evice. criterion , In > 2 pA al Va : 3 5 V cathode and anode. RENESAS
RKZ6.8Z4MFAKT
Rev.1.00 Feb 22, 2006 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd * 150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note: Four device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse
Reverse current IR — — 2 µA VR = 3.5 V
Capacitance C — 4.0 4.5 pF VR = 0 V, f = 1 MHz
Dynamic resistance rd — — 30 Ω I
Z = 5 mA
ESD-Capability *2, *3 — 8 — — kV C = 150 pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; IR > 2 µA at VR = 3.5 V.
3. Between cathode and anode.
2 3 4 5 6 7 0 50 100 ner Vo‘lage VZ (V) Ambiem Temperaur ner currem vs. Zener volmge Fig.2 Power DISSIpallon vs A PRSM Ta : 25°C nonrepelmve RENESAS
RKZ6.8Z4MFAKT
Rev.1.00 Feb 22, 2006 page 3 of 4
Main Characteristic
10 10
2
10
3
10
–2
10
–1
1.0
10
10
2
10
3
10
4
1.0
250
200
150
100
50
20015010050
00
3.0
0.3
2.45
3.8
1.75
1.0 1.5
With polyimide board
20h × 15w × 0.8t
Unit: mm
Fig.2 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
Power Dissipation Pd (mW)
Ta = 25°C
nonrepetitive
t
P
RSM
Fig.3 Surge Reverse Power Ratings
Time t (ms)
Nonrepetitive Surge Reverses Power P
RSM
(W)
Fig.1 Zener current vs. Zener voltage
Zener Voltage V
Z
(V)
10
-6
10
-7
10
-8
10
-9
10
-10
10
-11
10
-2
10
-3
10
-4
10
-5
Zener Current I
Z
(A)
07
246
135
RENESAS
RKZ6.8Z4MFAKT
Rev.1.00 Feb 22, 2006 page 4 of 4
Package Dimensions
b
2
e
b
E
H
E
D
c
L
e e
e
1
l
1
A
A
b
c
D
E
e
HE
L
b2
e1
l1
0.15
0.07
1.55
1.1
1.55
0.2
0.12
1.6
0.5
0.2
0.3
1.35
0.45
0.60
0.3
0.22
1.65
1.3
1.65
Dimension in Millimeters
Reference
Symbol Min Nom Max
Pattern of terminal position areas
0.002g
MASS[Typ.]
VSON-5 / VSON-5VPUSN0005KB-A
RENESAS Code
JEITA Package Code Previous Code
0.55
0.50
1.2
1.6
Package Name
VSON-5
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