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The CCG3PA 27W Mobile Power Adapter Board is a receptacle based Type-C power adapter which supports a maximum power profile of 27W (9V, 3A).
The EPC9084 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring two EPC2050 enhancement mode (eGaN) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2050 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.
This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives
The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum
The EPC9014 development board is a 200 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2019
These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).
The MAL219699003E3 mini charger and backup demonstration circuit is a fully transparent charger unit that uses a BQ24095 charging IC and TPS610997 boost converter IC from Texas Instruments to boost the capacitor voltage up to a 5 V constant output voltage.
SIP32429EVB is a load switch that integrates multiple control features that simplify the design and increase the reliability of the circuitry connected to the switch. The SiP32429 is a 56 mΩ switch designed to operate in the 6 V to 28 V range. An internally generated gate drive voltage ensures good RON linearity over the input voltage operating range.
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