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These development boards are in a monolithic half- bridge topology with on-board gate drives, featuring the EPC2100/1/5 eGaN ICs
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).
The EPC9001C development board is a half bridge topology with onboard gate drives, featuring the EPC2015C eGaN field effect transistors (FETs).
This development board is in a half bridge topology with onboard gate drives, featuring theEPC2035/36 eGaN® field effect transistors
The EPC9068 development board is a 100 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives
Evaluation Board for 'Inverter Power H-IC' highly integrated device containing all High Voltage (HV) control
The EPC9041 development board has a 80 V maximum device voltage, 20 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2105 eGaNIC Half Bridge
The EPC9003C development board is a 200 V maximum device voltage, 5 A maximum output current, half bridge with on board gate drives
The EPC9006C development board is a 100V maximum device voltage, 7A maximum output current, half bridge with onboard gate drives
EPC9205, is 80 V, 10 A PCB-based power module featuring the 100 V EPC2045 eGaN® FET for “plug and play” evaluation of the high performance gained with gallium nitride power transistors.
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