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The EPC9126HC development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC2001C 100V maximum device voltage capable of current pulses up to 150 A.
The EPC9091 development board is a 100 V maximum device voltage, 5 A output current, half bridge with onboard gate drives, featuring the EPC2051 enhancement mode (eGaN) field effect transistor (FET).
The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET).
The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with GaN FETs.
The LMG1210EVM-012 is a small, easy-to-use power stage with an external PWM signal (or HI and LI). The board can be configured as a buck converter, boost converter or other converter topology using a half bridge.
The EPC9017 development board is 2” x 1.5” and features three EPC2001 eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver.
This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).
The EPC9067 development board is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs).
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