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The EPC9054 is a high efficiency, differential mode Class-E amplifier development board that can operate up to 15 MHz.
The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives
This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2015/23 and EPC2001/21 eGaN® field effect transistors (FETs).
The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET).
This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.
The EPC9001C development board is a half bridge topology with onboard gate drives, featuring the EPC2015C eGaN field effect transistors (FETs).
The EPC9003C development board is a 200 V maximum device voltage, 5 A maximum output current, half bridge with on board gate drives
The EVALMASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The EPC9048C is a half bridge development board with onboard gate driver, featuring the 200V, 15A rated EPC2034C GaN field effect transistor (FET).
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