EPC9003C: 5A, 200V, Half Bridge

The EPC9003C development board is a 200 V maximum device voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010C enhancement mode(eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2010C* eGaN FET by including all the critical components ona single board that can be easily connected into any existing converter.

The EPC9003C development board is 2” x 1.5” and contains not only two EPC2010C* eGaN FET in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

* Status: New Device Offered (NDO)

The GaN Experts recommend EPC2207 for new designs

NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.