2SA2210 Datasheet by ON Semiconductor

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Ordering number : ENAOG67B ON Semiconductor”
60612 TKIM/21512 TKIM TC-00002708/30707FA TI IM TC-00000565 No. A0667-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
2SA2210
Bipolar Transistor
50V, 20A, Low VCE(sat) PNP TO-220F-3SG
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT processes Large current capacitance
Low collector-to-emitter saturation voltage High-speed switching
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --50 V
Collector-to-Emitter Voltage VCEO --50 V
Emitter-to-Base Voltage VEBO -- 6 V
Collector Current IC--20 A
Collector Current (Pulse) ICP --25 A
Base Current IB-- 3 A
Collector Dissipation PC2W
Tc=25°C30W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7529-002
Ordering number : ENA0667B
Product & Package Information
• Package : TO-220F-3SG
• JEITA, JEDEC : SC-67
• Minimum Packing Quantity
: 50 pcs./magazine
Marking Electrical Connection
1 : Base
2 : Collector
3 : Emitter
TO-220F-3SG
10.16
0.8
15.8712.98
3.3
6.68
3.23
1.47 MAX
15.8
4.7
2.54
2.76
123 0.5
2.54 2.54
3.18
( 1.0)
(0.84)
DETAIL-A
A
EMC
FRAME
A2210
LOT No.
2
1
3
2SA2210-1E
H a
2SA2210
No. A0667-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB= --40V, IE=0A --10 μA
Emitter Cutoff Current IEBO VEB= --4V, IC=0A --10 μA
DC Current Gain hFE VCE= --2V, IC= --1A 150 450
Gain-Bandwidth Product fTVCE= --10V, IC= --1A 140 MHz
Output Capacitance Cob VCB= --10V, f=1MHz 215 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC= --7A, IB= --350mA --200 --500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC= --7A, IB= --350mA --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC= --100μA, IE=0A --50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=--50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE= --100μA, IC=0A --6 V
Turn-On Time ton See specifi ed Test Circuit
60 ns
Storage Time tstg 270 ns
Fall Time tf20 ns
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SA2210-1E TO-220F-3SG 50pcs./magazine Pb Free
VR
RL
VCC= --20V
VBE=5V
IC=20IB1= --20IB2= --7A
++
50Ω
INPUT
OUTPU
T
RB
100μF 470μF
PW=20μsIB1
IB2
D.C.1%
2SA2210
No. A0667-3/7
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
Collector Current, IC -- A
IT12019
0 --2.0--0.5 --1.0 --1.5
0
--2
--14
--12
--10
--8
--6
--4
--16
--18
--20
IT12020
0 --1.0--0.8--0.2 --0.4 --0.6
0
--1
--7
--6
--5
--4
--3
--2
--8
--9
--10
IB=0mA IB=0mA
--700mA
--400mA
--500mA
--600mA
--300mA
--200mA
--100mA
--800mA
--900mA
--500mA --400mA
--300mA
--200mA
--120mA
--140mA
--160mA
--180mA
--80mA
--100mA
--60mA
--40mA
--1000mA
--20mA
Cob -- VCB VCE(sat) -- IC
fT -- IC
hFE -- IC
IC -- VBE
hFE -- IC
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--0.1 --1.0
23 57 2 --10
357 2357
5
7
100
5
3
7
2
2
1000
IT12026
--0.1--0.01 75327532 --1.0 75322
--10 3
--0.1
--1.0
5
--0.01
2
3
5
7
7
2
3
5
7
Ta=75°C
25°
C
--25°
C
Ta= --25°
C
25°C
75
°
C
IC / IB=20
IT12024
--0.01 --0.1
23 57 2 --1.0
357 235 --10
7
5
3
10
2
7
100
5
3
2
7
1000
VCE= --10V
IT12022
2
3
5
7
2
100
1000
10
3
5
7
--0.01 325
--0.1
7235
--1.0 --10
72 235 537
Ta=75°C
25
°
C
--25
°
C
VCE= --2V
--30
--25
--20
--5
--15
--10
00
IT12021
--0.2 --0.4 --0.6 --0.8 --1.0 --1.4--1.2
VCE= --2V
25°C
--25°
C
Ta=75°
C
IT12023
IT12025
2
100
10
3
5
7
2
1000
3
5
7
--0.01 325
--0.1
73257 3257
--1.0 --10 23 5
Ta=25°C
VCE= --2.0V
--0.7V
--0.5V
--0.2V
--1.0V
f=1MHz
2SA2210
No. A0667-4/7
VBE(sat) -- IC
VCE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--0.1--0.01 7532753275532
--1.0 --10 32
--1.0
2
3
5
7
2
3
IT12028
IC / IB=20
Ta= --25
°
C
25°
C
75°C
IT12027
--0.1--0.01 75327532 --1.0 75322
--10 3
--0.1
--1.0
--0.01
2
3
5
7
2
3
2
5
3
5
7
Ta=75
°C
25°C
--25°
C
IC / IB=50
Ta= --25°C
25°C
75
°
C
IT12030
IT12029
IT12031
2.5
0.5
0200
1.0
1.5
2.0
40 60 80 100 120 140 160
35
25
30
5
0160200 40 60 80
10
15
20
100 120 140
--0.01
2
3
5
7
2
--0.1
3
5
7
2
--1.0
--0.1 23 57 23 57
--1.0 23 57
--10
ICP= --25A
DC operation S / B Limit
1ms
10ms
PT=500
μs
IC= --20A
100ms
3
5
7
2
--10
3
5PC -- Ta
Collector Dissipation, PC -- W
Ambient Temperature, Ta -- °C
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
Tc=25°C
Single pulse
Forward Bias A S O
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2SA2210
No. A0667-5/7
Magazine Specifi cation
2SA2210-1E
‘ 7,1. m .3 an:
2SA2210
No. A0667-6/7
Outline Drawing
2SA2210-1E
Mass (g) Unit
1.8
* For reference
mm
2SA2210
PS No. A0667-7/7
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