WU
© Semiconductor Components Industries, LLC, 2011
May, 2011 − Rev. 5
1Publication Order Number:
BC307/D
BC307B
Amplifier Transistors
PNP Silicon
Features
•This is a Pb−Free Device*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO −45 Vdc
Collector − Base Voltage VCBO −50 Vdc
Emitter − Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD1.0
8.0
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 357 °C/W
Thermal Resistance, Junction−to−Case RqJC 125 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
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BC307BRL1G TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
12
BENT LEAD
TAPE & REEL
AMMO PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC30
7B
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BC307B
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
V(BR)CEO −45 − − Vdc
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
V(BR)EBO −5.0 − − Vdc
Collector−Emitter Leakage Current
(VCES = −50 V, VBE = 0)
(VCES = −50 V, VBE = 0) TA = 125°C
ICES
−
−
−0.2
−0.2
−15
−4.0
nAdc
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −100 mAdc, VCE = −5.0 Vdc)
hFE
−
200
−
150
290
180
−
460
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
−
−
−0.10
−0.30
−0.25
−0.3
−0.6
−
Vdc
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
−
−0.7
−1.0
−
−
Vdc
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
VBE(on) −0.55 −0.62 −0.7 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz)
fT−280 −MHz
Common Base Capacitance
(VCB = −10 Vdc, IC = 0, f = 1.0 MHz)
Ccbo − − 6.0 pF
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
NF −2.0 10 dB
1. IC = −10 mAdc on the constant base current characteristic, which yields the point IC = −11 mAdc, VCE = −1.0 V.
BC307B
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3
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
0.2
0.3
0.5
0.7
-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = -10 V
TA = 25°C
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current−Gain — Bandwidth Product
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
-0.4
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
TA = 25°C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
150
140
130
120
110
100
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
VCE = -10 V
TA = 25°C
-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = -10 V
f = 1.0 kHz
TA = 25°C
′
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10
VCE = -10 V
f = 1.0 kHz
TA = 25°C
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT ADMITTANCE (OHMS)
ob
150
BC307B
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4
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X−X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ---
N2.04 2.66
P1.50 4.00
R2.93 ---
V3.43 ---
1
T
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5773−3850
BC307/D
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