EE-SY113 Datasheet by Omron Electronics Inc-EMC Div
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OI'I'IROH
166 EE-SY113 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY113
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact reflective Photomicrosensor (EE-SY110) with a molded
housing and a dust-tight cover.
•Recommended sensing distance = 4.4 mm
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Four, 0.5
Four, 0.25
15 to 18
Notch for directional discrimination
Unless otherwise specified, the
tolerances are as shown below.
2.5
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr –40°C to 80°C
Storage Tstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL160 μA min., 1,600 μA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 4.4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age
VCE (sat) --- ---
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 24.
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EE-SY113 Photomicrosensor (Reflective) 167
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Input
Output
Input
Output
90 %
10 %
Distance d (mm)
Sensing Position Characteristics
(Typical)
Ta = 25°C
VCE = 10 V
IF = 20 mA
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Direction
Sensing object:
White paper
with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
d = 4.4 mm
Sensing object: White
paper with a reflection
factor of 90%
Sensing object: White paper
with a reflection factor of 90%
d1
d2
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (μA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C) Load resistance RL (kΩ)
Angle deviation θ (°)
0 x
I
F
= 20 mA
V
CE
= 5 V
Vcc = 5 V
Ta = 25°C
I
F
= 20 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 40 mA
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
d
1
= 4.4 mm
Relative light current IL (%)
Dark current ID (nA)
Response time tr, tf (μs)
Relative light current IL (%)
Relative light current IL (%)
Light current IL (μA)
d = 4.4 mm
V
CE
= 10 V
V
CE
= 10 V
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