EE-SY110 Datasheet by Omron Electronics Inc-EMC Div
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170 EE-SY110 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY110
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact reflective model with a molded housing.
•Recommended sensing distance = 5.0 mm
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Four, R1.5
Four, 0.25
Four, 0.5
15 to 18
15.2±0.2
A
K
C
E
Unless otherwise specified, the
tolerances are as shown below.
+0.2
- 0.3
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Pulse forward cur-
rent
IFP 1 A
(see note 2)
Reverse voltageVR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
OperatingTopr –40°C to 85°C
StorageTstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltageVF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflec-
tion
Collector–Emitter saturated volt-
age
VCE (sat) --- ---
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 10 V
Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 24.
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EE-SY110 Photomicrosensor (Reflective) 171
■Engineering Data
VCE = 10 V
IF = 20 mA
d = 5 mm
Sensing object:
White paper
with a reflection
factor of 90%
d
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Forward Current
Characteristics (Typical)
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Load resistance RL (kΩ)
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
Input
Output
Input
Output
90 %
10 %
0 x
I
F
= 20 mA
V
CE
= 5 V
Vcc = 5 V
Ta = 25°C
Ta = 25°C
d = 5 mm
Sensing object: White paper with a
reflection factor of 90%
I
F
= 20 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 40 mA
Distance d (mm)
Sensing Position Characteristics
(Typical)
Sensing object: White paper
with a reflection factor of 90%
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Sensing object:
White paper
with a reflection
factor of 90%
Direction
I
F
= 20 mA
V
CE
= 10 V
Ta = 25°C
d
1
= 5 mm
Relative light current IL (%)
Dark current ID (nA)
Response time tr, tf (μs)
Relative light current IL (%)
Relative light current IL (%)
Light current IL (μA)
d = 5 mm
V
CE
= 10 V
V
CE
= 10 V
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