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Continuous Dram TC : 25°C ID 43 A
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Power Drssuoamn To : 25°C PD 23.2 w
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Need Dram IBM 210 A
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Cunem Limmeo oy Package | ‘rA : 25°C leax 100 A
Operaung Juncfion and Smrage Tr —55 :o °c
Temperature T5“; +150
Source Cunem (Body Drode) I5 21 A
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n Semrcunduclurcamvunenu\nduslnes Lu: 2m 1 Pumcauon Ovdev Numb
May, 2019 — Rev. 7
NTMFS4955
© Semiconductor Components Industries, LLC, 2013
May, 2019 − Rev. 7
1Publication Order Number:
NTMFS4955N/D
NTMFS4955N
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 48 A
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•Optimized for 5 V, 12 V Gate Drives
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•CPU Power Delivery
•DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID16.7 A
TA = 100°C 10.5
Power Dissipation
RqJA (Note 1)
TA = 25°C PD2.70 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID25.2 A
TA = 100°C 15.9
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD6.16 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID9.7 A
TA = 100°C 6.2
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.92 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID48 A
TC =100°C 30
Power Dissipation
RqJC (Note 1)
TC = 25°C PD23.2 W
Pulsed Drain
Current
TA = 25°C, tp = 10 msIDM 210 A
Current Limited by Package TA = 25°C IDmax 100 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) IS21 A
Drain to Source DV/DT dV/dt6.0 V/ns
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4955N
AYWZZ
1
V(BR)DSS RDS(ON) MAX ID MAX
30 V
5.6 mW @ 10 V
48 A
8.5 mW @ 4.5 V
N−CHANNEL MOSFET
Device Package Shipping†
ORDERING INFORMATION
NTMFS4955NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4955NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
D (5,6)
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter UnitValueSymbol
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 26 Apk, L = 0.1 mH, RG = 25 W)
EAS 34 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.4
°C/W
Junction−to−Ambient – Steady State (Note 3) RqJA 46.3
Junction−to−Ambient – Steady State (Note 4) RqJA 136.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 20.3
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 11.0 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
21 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 1.7 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ3.9 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 4.5 5.6
mW
ID = 15 A 4.5
VGS = 4.5 V ID = 30 A 6.8 8.5
ID = 15 A 6.7
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 52 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1264
pF
Output Capacitance COSS 483
Reverse Transfer Capacitance CRSS 143
Capacitance Ratio CRSS /
CISS
VGS = 0 V, VDS = 15 V, f = 1 MHz 0.11 0.22
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4955N
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
10.8
nC
Threshold Gate Charge QG(TH) 2.0
Gate−to−Source Charge QGS 3.8
Gate−to−Drain Charge QGD 4.2
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 21.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.5
ns
Rise Time tr32.7
Turn−Off Delay Time td(OFF) 16.4
Fall Time tf6.2
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.4
ns
Rise Time tr27.5
Turn−Off Delay Time td(OFF) 20.3
Fall Time tf4.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 30 A
TJ = 25°C 0.86 1.1
V
TJ = 125°C 0.75
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
25.8
ns
Charge Time ta12.4
Discharge Time tb13.4
Reverse Recovery Charge QRR 13.6 nC
PACKAGE PARASITIC VALUES
Source Inductance LS
TA = 25°C
1.00 nH
Drain Inductance LD0.005 nH
Gate Inductance LG1.84 nH
Gate Resistance RG1.0 2.2 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4955N
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4
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
543210
0
20
40
50
10
60
100
120
54321
0
10
20
50
60
80
100
120
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS (V) ID, DRAIN CURRENT (A)
981076543
0
0.002
0.006
0.008
0.010
0.014
0.016
0.020
120100706050302010
0.003
0.004
0.005
0.006
0.008
0.009
0.010
0.011
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.7
0.9
1.1
1.2
1.4
1.6
1.7
30252015105
10
100
1,000
10,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
30
70
80
90
110 TJ = 25°C
VGS = 2.5 V
3.0 V
3.5 V
4.0 V
4.5 V
10 V
TJ = 25°C
VDS = 10 V
TJ = 125°C
TJ = −55°C
30
40
70
90
110
0.004
0.012
0.018 ID = 30 A
11040 9080
0.007
T = 25°C
VGS = 4.5 V
VGS = 10 V
150
ID = 30 A
VGS = 10 V
0.8
1.0
1.3
1.5
TJ = 85°C
VGS = 0 V
TJ = 125°C
TJ = 150°C
o v < v55="" single="" pu‘se="" tc="" :="" 2510="">NTMFS4955N
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5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
302520151050
0
200
400
800
1000
1200
1400
1600
221814126420
0
1
3
5
6
8
9
11
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.8 1.00.70.60.50.40.3
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.10.01
0.01
0.1
1
10
100
1000
150125100755025
0
4
12
16
24
28
40
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
600
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
810 16 20
2
4
7
10
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
QT
Qgs Qgd
VGS = 10 V
VDD = 15 V
ID = 15 A
td(off)
td(on)
tf
tr
TJ = 25°C
VGS = 0 V
TJ = 125°C
10 ms
100 ms
1 ms
10 ms
dc
0 V < VGS < 10 V
Single Pulse
TC = 25°C
8
20
32
ID = 26 A
RDS(on) Limit
Thermal Limit
Package Limit
36
NTMFS4955N
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6
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
r(t)
(°C/W)
t, TIME (s)
Figure 13. Thermal Response
e @ M mmmsm mm a D0 NOTWCLUD
4* D1 4.
TOPVIEW \_. / g
«X k
:4 El
DETAILA
SIDE VIEW DETAILA
0,10
0,05
BOTTOM VIEW ’ '
and J
and
NTMFS4955N
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7
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c L
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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