1N6138A - 1N6173A Datasheet by Microsemi Corporation

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1N6138A – 1N6173A

Available on

commercial

versions

Voidless Hermetically Sealed Bidirectional

Transient Voltage Suppressors

Qualified to MIL-PRF-19500/516

Qualified Levels:

JAN, JANTX, JANTXV

and JANS

DESCRIPTION

This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage

Suppressors (TVS) are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability

applications where a failure cannot be tolerated. They provide a working peak “standoff” voltage

selection from 5.2 to 152 Volts with a 1500 W rating for a 10/1000 µs pulse. They are very robust

in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability.

These devices are available as both a non-suffix part and an “A” version part involving different

voltage tolerances as described in the nomenclature section. These devices are also available in a

surface mount MELF package configuration.

“C” Package

Also available in:

“C” SQ-MELF

Package

(surface mount)

1N6138US – 1N6173US

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• High surge current and peak pulse power provides transient voltage protection for sensitive circuits

• Triple-layer passivation

• Internal “Category 1” metallurgical bonds

• Voidless hermetically sealed glass package

• JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.

(See part nomenclature for all available options.)

• RoHS compliant versions available (commercial grade only)

APPLICATIONS / BENEFITS

• Military and other high-reliability applications

• Extremely robust construction

• Extensive range in working peak “standoff” voltage (VWM) from 5.2 to 152 volts

• 1500 watt peak pulse power (PPP ) for a 10/1000 us test pulse

• ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively

• Protection from the secondary effects of lightning per select levels in IEC61000-4-5.

• Flexible axial-leaded mounting terminals

• Non-sensitive to ESD per MIL-STD-750 method 1020

• Inherently radiation hard as described in Microsemi “MicroNote 050”

MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters/Test Conditions

Symbol

Value

Unit

Junction and Storage Temperature

and T

STG

-55 to +175

Thermal Resistance Junction-to-Lead (1)

RӨJL

oC/W

Peak Pulse Power @ 25 ºC

PPP

1500

Off-State Power @ TL = 75 oC (1)

5.0

Off-State Power @

TA = 25 oC (2)

3.0

Impulse Repetition Rate

0.01

Solder Temperature @ 10 s

TSP

260

Notes: 1. At 3/8 inch lead length from body (see figure 4).

2. Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

mounting point to ambient is sufficiently controlled where TOP or TJ(MAX) is not exceeded (also see

figure 6).

gackage dimensions Reliabilig Level RoHS Comgliance (ava vailable on commercial rade onl Voila e Tolerance JEDEC WE number Electrical Characterislics table

1N6138A – 1N6173A

MECHANICAL and PACKAGING

• CASE: Hermetically sealed voidless hard glass with tungsten slugs

• TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only.

• MARKING: Body paint and part number

• POLARITY: No polarity marking for these bidirectional TVSs

• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.

• WEIGHT: Approximately 1270 milligrams

• See package dimensions on last page.

PART NOMENCLATURE

JAN 1N6138 A e3

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

JANS = JANS Level

Blank = commercial

JEDEC type number

See Electrical Characteristics

table

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

Voltage Tolerance

A = Standard

Blank =5% higher VC, 5% lower

min. V(BR) and 5% lower IPP

SYMBOLS & DEFINITIONS

Symbol

Definition

αV(BR)

Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in

temperature that caused it expressed in %/°C or mV/°C.

V(BR)

Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.

VWM

Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that

may be continuously applied over the standard operating temperature.

Standby Current: The current through the device at rated stand-off voltage.

Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an

impulse current (IPP) for a specified waveform.

PPP

Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The

impulse power is the maximum-rated value of the product of I

and V

| GMicrosemi —

1N6138A – 1N6173A

ELECTRICAL CHARACTERISTICS

INDUSTRY

TYPE

NUMBER

(Note 1)

MINIMUM

BREAKDOWN

VOLTAGE

(Note 1)

V(BR) @ I(BR)

RATED

STANDOFF

VOLTAGE

VWM

MAXIMUM

STANDBY

CURRENT

ID @ VWM

MAXIMUM

CLAMPING

VOLTAGE

(Note 1)

VC @ IPP

MAXIMUM

PEAK PULSE

CURRENT

(Note 1)

IPP

MAXIMUM

TEMP.

COEF. OF

V(BR)

αV(BR)

Volts

µA

Volts

Amps

%/oC

1N6138A

6.46

175

5.2

500

10.5

142.8

0.05

1N6139A

7.13

175

5.7

300

11.2

133.9

.06

1N6140A

7.79

150

6.2

100

12.1

124.0

.06

1N6141A

8.65

150

6.9

100

13.4

111.9

.06

1N6142A

9.50

125

7.6

100

14.5

103.4

.07

1N6143A

10.45

125

8.4

15.6

96.2

.07

1N6144A

11.40

100

9.1

16.9

88.8

.07

1N6145A

12.35

100

9.9

18.2

82.4

.08

1N6146A

14.25

11.4

21.0

71.4

.08

1N6147A

15.20

12.2

22.3

67.3

.08

1N6148A

17.10

13.7

25.1

59.8

.085

1N6149A

19.0

15.2

27.7

54.2

.085

1N6150A

20.9

16.7

30.5

49.2

.085

1N6151A

22.8

18.2

33.3

45.0

.09

1N6152A

25.7

20.6

37.4

40.1

.09

1N6153A

28.5

22.8

41.6

36.0

.09

1N6154A

31.4

25.1

45.7

32.8

.095

1N6155A

34.2

27.4

49.9

30.1

.095

1N6156A

37.1

29.7

53.6

28.0

.095

1N6157A

40.9

32.7

59.1

25.4

.095

1N6158A

44.7

35.8

64.6

23.2

.095

1N6159A

48.5

38.8

70.1

21.4

.095

1N6160A

53.2

42.6

77.0

19.5

.095

1N6161A

58.9

47.1

85.3

17.6

.100

1N6162A

64.6

51.7

97.1

15.4

.100

1N6163A

71.3

56.0

103.1

14.5

.100

1N6164A

77.9

62.2

112.8

13.3

.100

1N6165A

86.5

69.2

125.1

12.0

.100

1N6166A

95.0

76.0

137.6

10.9

.100

1N6167A

104.5

86.6

151.3

9.9

.100

1N6168A

114.0

91.2

165.1

9.1

.100

1N6169A

123.5

98.8

178.8

8.4

.105

1N6170A

142.5

114.0

206.3

7.3

.105

1N6171A

152.0

121.6

218.4

6.9

.105

1N6172A

171.0

136.8

245.7

6.1

.110

1N6173A

190.0

152.0

273.0

5.5

.110

Notes: 1. Part number without the A suffix has 5% higher VC, 5% lower minimum V(BR) , and 5% lower IPP.

20 kW 10 kW . w mm. 1 KW u . m mumw 100 55759 2 3 4557s: 2 a 4557s: 2 3 £557” 10 us 100us 1 ms 10ms Peak Pulse Power vs. Pulse Time 100 50 0 50 100 150 175 Peak Pulse Power vs Ti prior to impulse)

1N6138A – 1N6173A

GRAPHS

Pulse Time (tp)

FIGURE 1

Peak Pulse Power vs. Pulse Time

Junction Temperature (TJ) in °C

FIGURE 2

Peak Pulse Power vs TJ (prior to impulse)

Peak Pulse Power (PPP)

Max Peak Pulse Power (P

) or current (I

)

in percent of Max Ratings

o Microsemi 100% \I||l\|||\||| PULSE TIME DURATION (tp) IS DEFINED AS THAT POINT WHERE \\ Ip DECAYS TO 50% OF Ipp 50 % \ \ \§ 0 1 2 3 4 W 25 50 75 100 125 150 175 200 TemgeraiurerPower Derating Curve

1N6138A – 1N6173A

GRAPHS

Time (t) in milliseconds

FIGURE 3

Pulse Wave Form

TA (°C) (Ambient)

FIGURE 4

Temperature-Power Derating Curve

Pulse Current (I

PP)

in Percent of I

DC Operation (W) Maximum Rating

I O Microsemi 2.5 2.0 1.5 1.0 0.5 0 50 1 00 1 50 200 Steady-Stale Deratinq Curve {or Free»Air Mounting (RM = 50 QCAN)

1N6138A – 1N6173A

GRAPHS

Ambient Temperature (TA) in °C

FIGURE 5

Steady-State Derating Curve for Free-Air Mounting (RθJA = 50 ºC/W)

Maximum Steady-State Power in Watts

I O Microsemi LL BL LD 3| L1 BD Dimensions Inches Millimeters Min Max Min Max BD 0.135 0.185 3.43 4.70 3 BL 0.140 0.195 3.56 4.95 LD 0.036 0.042 0.91 1.07 LL 1.00 1.30 25.4 33.02 L1 - 0.030 - 0.76 4