EE-SY1200 Datasheet by Omron Electronics Inc-EMC Div

OI'I'IROH

154 EE-SY1200 Photomicrosensor (Reflective)

Photomicrosensor (Reflective)

EE-SY1200

■Electrical and Optical Characteristics (Ta=25°C)

*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.

*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which

is reflected from surroundings of the Photomicrosensor and /or the background object.

Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.

Item Symbol Value Unit Condition

MIN. TYP. MAX.

Emitter Forward voltageVF--- 1.2 1.4 V IF = 20 mA

Reverse current IR--- --- 10 μAVR = 4 V

Peak emission wavelength λP--- 940 --- nm ---

Detector Light current 1 IL1 200 --- 1000 μAI

F = 10 mA, VCE = 2 V, Aluminum-deposited

surface, d = 4 mm*1

Light current 2 IL2 150 --- --- μAI

F = 4 mA, VCE = 2 V, Aluminum-deposited

surface, d = 1 mm*1

Dark current ID--- 2 200 nA VCE = 10 V, 0 lx

Leakage current 1 ILEAK1 --- --- 500 nA IF = 10 mA, VCE = 2 V, with no reflection*2

Leakage current 2 ILEAK2 --- --- 200 nA IF = 4 mA, VCE = 2 V, with no reflection*2

Collector-Emitter saturated

voltageVCE (sat) --- --- --- V ---

Peak spectral sensitivity

wavelength λP--- 850 --- nm ---

Rising time tr --- 30 --- μsVCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1

Falling time t f --- 30 --- μsVCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1

■Dimensions

Emitter centerDetector center

(0.7)

(0.8)

(1) (

0.8

)

3.2

1.9

1.2

0.7

1.1

2-0.65

2-0.45

2-12-1.72-1

2-0.65

Terminal No. Name

A Anode

K Cathode

C Collector

E Emitter

Internal Circuit

Recommended Soldering Pattern

Note:1. The shaded portion in the

above figure may cause

shorting. Do not wire in

this portion.

2. The dimensional tolerance

for the recommended sol-

dering pattern is ±0.1 mm.

Note:

Unless otherwise specified toleranc-

es are ±0.15.

No burrs dimensions are included in

outline dimensions.

The burrs dimensions are 0.15 MAX.

Diagonal line indicate the region is

part Au plating area.

■Features

•Ultra-compact model.

•PCB surface mounting type.

•High S/N ratio

(High light current / Low leakage current)

•Recommended sensing distance = 1.0 to 4.0 mm

■Absolute Maximum Ratings

(Ta=25°C)

*1 Refer to the temperature rating chart if the ambient temperature

exceeds 25°C.

*2 The pulse width is 10 μs maximum with a frequency of 100 Hz.

*3 Complete soldering within 10 seconds for reflow soldering.

Item Symbol Rated value Unit

Emit-

ter Forward current IF50*1 mA

Pulse forward

current IFP 500*2 mA

Reverse voltageVR4V

Detec-

tor Collector-Emitter

voltageVCEO 30 V

Emitter-Collector

voltageVECO 5V

Collector current IC20 mA

Collector dissipa-

tion PC50*1 mW

Operating temperature Topr −25 to +85 °C

Storage temperature Tstg −

40 to +100

°C

Reflow soldering tempera-

ture Tsol 240*3 °C

Be sure to read Precautions on page 24.

OI'I'IROD \\§.

EE-SY1200 Photomicrosensor (Reflective) 155

■Engineering Data

Forward Current vs. Collector

Dissipation Temperature RatingForward Current vs. Forward Voltage

Characteristics (Typical) Light Current vs. Forward Current

Characteristics (Typical)

Light Current vs. Collector-Emitter

Voltage Characteristics (Typical)

Relative Light Current vs. Ambient

Temperature Characteristics (Typical)

Dark Current vs. Ambient Temperature

Characteristics (Typical)

Response Time vs. Load Resistance

Characteristics (Typical) Sensing Distance Characteristics

(Typical) Sensing Position Characteristics

(Typical)

Sensing Position Characteristics

(Typical) Response Time Measurement

Circuit Light Current Measurement Setup

Diagram

Ambient temperature Ta (°C)

Collector dissipation PC (mW)

Forward current IF (mA)

0-20 0 20 40 60 80 100-40

PCIF

Forward voltage VF (V)

Forward current IF (mA)

Ta=+70°C

Ta=+25°C

Ta=-30°C

0.2 0.4 0.6 0.81 1.2 1.4 1.6 1.8

Forward current IF (mA)

Light current IL (μA)

Ta=25°C

VCE=2V

d=1mm

VCE=2V

d=4mm

3,000

2,500

2,000

1,500

1,000

500

0 5 10 15 20

Collector-Emitter voltage VCE (V)

Light current IL (mA)

1,600

1,400

1,200

1,000

800

600

400

200

0246810

IF=2mA, d=4mm

IF=4mA, d=4mm

IF=2mA, d=1mm

=7mA, d=4mm

IF=4mA, d=1mm

IF=10mA, d=4mm

IF=15mA, d=4mm

IF=7mA, d=1mm

IF=10mA, d=1mm

Ambient temperature Ta (°C)

Relative light current IL (%)

120

110

100

-40 -20 0 20 40 60 80 100

IF=10mA

VCE=2V

Ambient temperature Ta (°C)

Dark current ID (nA)

10,000

1,000

100

0.1

0.01

0.001

-30 80010 7020 4030 60-20 -10 50 90

Load resistance RL (kΩ)

Response time tr,tf (μs)

10,000

1,000

100

0.1 1 10 100

Distance d (mm)

Relative light current IL (%)

Aluminum-deposited surface

4mA, 10mA

VCE

10V

100

0010.5 1.5 2.5 3.5 4.52345

Card moving distance L (mm)

Relative light current IL (%)

10mA

VCE

4mm

4mA

VCE

1mm

White Black

-4 -3-5-6 2 43-1-2 0 1

120

100

Card moving distance L (mm)

Relative light current IL (%)

IF=10mA

VCE=2V

d=4mm

IF=4mA

VCE=2V

d=1mm

White Black

0+-

-4 -3-5-6 2 43-1-2 0 1

120

100

Input

Output

Input

Output

90%

10% t

t ft r

VCC

Aluminum-deposited surface

Glass d

Sensor

OI'I'IROD *Wﬂ %’ ;‘}E}E~}EH : J

156 EE-SY1200 Photomicrosensor (Reflective)

■Tape and Reel

Reel Dimension (Unit: mm)

Tape Dimension (Unit: mm)

Part Mounting Direction

•The devices are oriented in the rectangular holes in the carrier tape so that the edge with the LED faces the round feeding holes.

Tape Quantity

2,000 pcs./reel

φ21

±0.8

φ13

±0.5

15.4

±1

180

-3

φ60

±1

0.2

0.4

0.8

0.6

0.2

0.4

0.6

0.8

4 2 4

1.75

5.5

φ1.5

2.15

3.45

1.35

0.3

Pull-out direction

0.2

0.4

0.8

0.6

0.2

0.4

0.6

0.8

EE-SY1200 Photomicrosensor (Reflective) 157

■Precautions to be taken on mounting

Temperature Profile

The reflow soldering can be implemented in two times complying

with the following diagram.

All the temperatures in the product must be within the diagram.

Manual soldering

The manual soldering cannot be applied to the products.

There is a possibility that the housing is deformed and/or Au plating

is peeled off by heat.

Other Notes

The use of infrared lamp causes the temperature at the resin to rise

particularly too high.

All the temperatures in the product must be within the above

diagram.

Do not immerse the resin part into the solder.

Even if within the above temperature diagram, there is a possibility

that the gold wire in the products is broken in case that the

deformation of PCB gives the stress to the product terminals.

Please confirm the conditions of the reflow soldering fully by actual

solder reflow machine prior to the mass production use.

■Storage and Handling after Opening

Storage Conditions

In order to avoid the absorption of moisture, the products shall be

stored in a dry box with desiccant or in the following conditions.

Storage temp. : 5 to 30°C

Storage humidity : 70%RH or less

Treatment after Opening

1. Reflow soldering must be done within 48 hours stored at the con-

ditions of humidity 60%RH or less and temperature 5 to 25°C.

2. In case of long time storage after open, please mount at the con-

ditions of humidity 70%RH or less and temperature 5 to 30°C

within 1 week by using dry box or resealing with desiccant in

moisture-proof bag by sealer.

Baking before Mounting

In case that it could not carry out the above treatment, it is able to

mount by baking treatment.

However baking treatment shall be limited only 1 time.

Recommended conditions : 60°C, 12 to 24 hours (reeled one)

100°C, 8 to 24 hours (loose one)

Time (sec)

Temperature (°C)

120 sec MAX.

160°C MAX.

1to 4°C/sec

240°C MAX.

10 sec MAX.

50 sec MAX.

200°C

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