APT75GP120JDQ3 Datasheet by Microchip Technology

ADVANCED — A POWER TECHNOLOGY {’1 \ 5» ‘Apr Website - hnpy/wwmauvancedpowemom“

050-7458 Rev A 10-2005

APT75GP120JDQ3

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1250µA)

Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Symbol

V(BR)CES

VGE(TH)

VCE(ON)

ICES

IGES

Units

Volts

µA

nA

Symbol

VCES

VGE

IC1

IC2

ICM

RBSOA

PD

TJ,TSTG

TL

APT75GP120JDQ3

1200

±20

128

57

300

300A @ 960V

543

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1 @ TC = 150°C

Reverse Bias Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

APT Website - http://www.advancedpower.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

1200

3 4.5 6

3.3 3.9

3.0

1250

5500

±100

The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch

Through Technology this IGBT is ideal for many high frequency, high voltage switching

applications and has been optimized for high frequency switchmode power supplies.

• Low Conduction Loss • 50 kHz operation @ 800V, 20A

• Low Gate Charge • 20 kHz operation @ 800V, 44A

• Ultrafast Tail Current shutoff • RBSOA Rated

POWER MOS 7® IGBT

1200V

APT75GP120JDQ3

®

C

E

G

SOT-227

ISOTOP

®file # E145592

"UL Recognized"

GE

E

C

O®©® ® ®

050-7458 Rev A 10-2005

APT75GP120JDQ3

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. (See Figure 24.)

5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

APT Reserves the right to change, without notice, the speciﬁcations and information contained herein.

DYNAMIC CHARACTERISTICS

Symbol

Cies

Coes

Cres

VGEP

Qg

Qge

Qgc

RBSOA

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

Test Conditions

Capacitance

VGE = 0V, VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCE = 600V

IC = 75A

TJ = 150°C, RG = 5Ω, VGE =

15V, L = 100µH,VCE = 960V

Inductive Switching (25°C)

VCC = 600V

VGE = 15V

IC = 75A

RG = 5Ω

TJ = +25°C

Inductive Switching (125°C)

VCC = 600V

VGE = 15V

IC = 75A

RG = 5Ω

TJ = +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Reverse Bias Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4

Turn-on Switching Energy (Diode) 5

Turn-off Switching Energy 6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4 4

Turn-on Switching Energy (Diode) 55

Turn-off Switching Energy 6

MIN TYP MAX

7035

460

80

7.5

320

50

140

300

20

40

165

55

1620

4100

2500

20

40

245

115

1620

5850

4820

UNIT

pF

V

nC

A

ns

µJ

ns

µJ

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

Volts

MIN TYP MAX

.23

.56

29.2

2500

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)

Symbol

RθJC

WT

VIsolation

050-7458 Rev A 10-2005

APT75GP120JDQ3

TYPICAL PERFORMANCE CURVES

BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

IC, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

160

140

120

100

80

60

40

20

0

250

200

150

100

50

0

5

4

3

2

1

0

1.10

1.05

1.00

0.95

0.90

160

140

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

5.0

4.0

3.0

2.0

1.0

0

180

160

140

120

100

80

60

40

20

0

TJ = 125°C

TJ = 25°C

TJ = -55°C

TJ = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

VGE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

TJ = 125°C

TJ = 25°C TJ = 125°C

TJ = 25°C

VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)

VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

0 1 2 3 4 5 0 1 2 3 4 5

0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350

6 8 10 12 14 16 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

VCE = 960V

VCE = 600V

VCE = 240V

IC = 75A

TJ = 25°C

IC = 150A

IC = 75A

IC = 37.5A

IC = 150A

IC = 75A

IC = 37.5A

VGE = 15V

250µs PULSE TEST

<0.5 % DUTY CYCLE

VGE = 10V

250µs PULSE TEST

<0.5 % DUTY CYCLE

, // >\ / \\ // vGE :‘sv Tl: \‘ ﬂ 1 {Am :zmmve \ x x x x \ TJ=zsvcveE= \ \ \ / \ \ \ x / / / / // I / / //// // / / ”—54 / /« ‘ :://

050-7458 Rev A 10-2005

APT75GP120JDQ3

VGE =15V,TJ=125°C

VGE =15V,TJ=25°C

VCE = 600V

RG = 5Ω

L = 100 µH

SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)

SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)

ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current

ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current

ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current

RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature

VCE = 600V

VGE = +15V

RG = 5Ω

RG = 5Ω, L = 100µH, VCE = 600V

VCE = 600V

TJ = 25°C, TJ =125°C

RG = 5Ω

L = 100 µH

30

20

10

0

100

80

60

40

20

0

15000

10000

5000

0

20000

15000

10000

5000

0

VGE = 15V

VCE = 600V

VGE = +15V

RG = 5Ω

0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

0 10 20 30 40 50 0 25 50 75 100 125

RG = 5Ω, L = 100µH, VCE = 600V

TJ = 25 or 125°C,VGE = 15V

TJ = 125°C, VGE = 15V

TJ = 25°C, VGE = 15V

350

300

250

200

150

100

50

0

160

140

120

100

80

60

40

20

0

12000

10000

8000

6000

4000

2000

0

15000

12500

10000

7500

5000

2500

0

TJ = 125°C,VGE =15V

TJ = 25°C,VGE =15V

TJ = 125°C, VGE = 15V

TJ = 25°C, VGE = 15V

Eon2,150A

Eoff,150A

Eon2,75A

Eoff,75A

Eon2,37.5A

Eoff,37.5A

VCE = 600V

VGE = +15V

TJ = 125°C

VCE = 600V

VGE = +15V

RG = 5Ω

Eon2,150A

Eoff,150A

Eoff,75A

Eon2,75A

Eon2,37.5A

Eoff,37.5A

050-7458 Rev A 10-2005

APT75GP120JDQ3

TYPICAL PERFORMANCE CURVES

0.25

0.20

0.15

0.10

0.05

0

ZθJC, THERMAL IMPEDANCE (°C/W)

0.3

0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

10-5 10-4 10-3 10-2 10-1 1.0

20,000

1,000

500

100

50

10

0

350

300

250

200

150

100

50

0

C, CAPACITANCE (PF)

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE

Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0 10 20 30 40 50 0 200 400 600 800 1000

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

20 35 50 60 80 95 110

FMAX, OPERATING FREQUENCY (kHz)

IC, COLLECTOR CURRENT (A)

Figure 20, Operating Frequency vs Collector Current

TJ = 125°C

TC = 75°C

D = 50 %

VCE = XXXV

RG = 5Ω

50

10

5

1

0.5

0.1

0.05

Fmax = min (fmax, fmax2)

0.05

fmax1 =

td(on) + tr + td(off) + tf

Pdiss - Pcond

Eon2 + Eoff

fmax2 =

Pdiss = TJ - TC

RθJC

Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2

t2

t1

PDM

Note:

Cies

Coes

Cres

0.0221

0.0498

0.158

0.0014

0.0416

0.543

Power

(watts)

Junction

temp (°C)

RC MODEL

Case temperature (°C)

7.xu1mvvx ‘ L m momnnsm Inov g7 mew Thklllsowsls mums ‘ Mt r y ‘ 9 5 427mm; x©®i m mum (NI mmv zywzou: £ wane

050-7458 Rev A 10-2005

APT75GP120JDQ3

Figure 22, Turn-on Switching Waveforms and Deﬁnitions

Figure 23, Turn-off Switching Waveforms and Deﬁnitions

TJ = 125°C

Collector Current

Collector Voltage

Gate Voltage

Switching Energy

5%

10%

td(on)

90%

10%

tr

5%

TJ = 125°C

Collector Voltage

Collector Current

Gate Voltage

Switching Energy

0

90%

td(off)

10%

tf

90%

APT60DQ120

I

C

A

D.U.T.

V

CE

Figure 21, Inductive Switching Test Circuit

V

CC

*DRIVER SAME TYPE AS D.U.T.

I

C

V

CLAMP

100uH

V

TEST

A

B

D.U.T.

DRIVER*

V

CE

Figure 24, EON1 Test Circuit

050-7458 Rev A 10-2005

APT75GP120JDQ3

TYPICAL PERFORMANCE CURVES

Characteristic / Test Conditions

Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5)

RMS Forward Current (Square wave, 50% duty)

Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

Symbol

IF(AV)

IF(RMS)

IFSM

Symbol

VF

Characteristic / Test Conditions

IF = 75A

Forward Voltage IF = 150A

IF = 75A, TJ = 125°C

STATIC ELECTRICAL CHARACTERISTICS

UNIT

Amps

UNIT

Volts

MIN TYP MAX

2.8

3.48

2.17

APT75GP120JDQ3

60

88

540

DYNAMIC CHARACTERISTICS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁed.

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

MIN TYP MAX-

- 60

- 265

- 560

- 5 -

- 350

- 2890

- 13 -

- 150

- 4720 -

- 40

UNIT

ns

nC

Amps

ns

nC

Amps

ns

nC

Amps

Characteristic

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Reverse Recovery Time

Reverse Recovery Charge

Maximum Reverse Recovery Current

Symbol

trr

Qrr

IRRM

trr

Qrr

IRRM

trr

Qrr

IRRM

Test Conditions

IF = 60A, diF/dt = -200A/µs

VR = 800V, TC = 25°C

IF = 60A, diF/dt = -200A/µs

VR = 800V, TC = 125°C

IF = 60A, diF/dt = -1000A/µs

VR = 800V, TC = 125°C

IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C

FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL

ZθJC, THERMAL IMPEDANCE (°C/W)

10-5 10-4 10-3 10-2 10-1 1.0

RECTANGULAR PULSE DURATION (seconds)

FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION

0.60

0.50

0.40

0.30

0.20

0.10

0

0.5

SINGLE PULSE

0.1

0.3

0.7

0.9

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2

t2

t1

PDM

Note:

0.148

0.238

0.174

0.006

0.0910

0.524

Power

(watts)

Junction

temp. (°C)

RC MODEL

Case temperature. (°C)

>V V

050-7458 Rev A 10-2005

APT75GP120JDQ3

400

350

300

250

200

150

100

50

0

50

45

40

35

30

25

20

15

10

5

0

Duty cycle = 0.5

TJ = 175°C

100

90

80

70

60

50

40

30

20

10

0

TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)

Figure 30. Dynamic Parameters vs. Junction Temperature Figure 31. Maximum Average Forward Current vs. CaseTemperature

VR, REVERSE VOLTAGE (V)

Figure 32. Junction Capacitance vs. Reverse Voltage

200

180

160

140

120

100

80

60

40

20

0

7000

6000

5000

4000

3000

2000

1000

0

Qrr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT

(nC) (A)

IRRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME

(A) (ns)

TJ = 125°C

VR = 800V

TJ = 125°C

VR = 800V

TJ = 125°C

VR = 800V

TJ = 175°C

TJ = -55°C

TJ = 25°C

TJ = 125°C

0 1 2 3 4 0 200 400 600 800 1000 1200

0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200

30A

60A

120A

30A

60A

trr

Qrr

trr

IRRM

1.2

1.0

0.8

0.6

0.4

0.2

0.0

350

300

250

200

150

100

50

0

CJ, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS

(pF) (Normalized to 1000A/µs)

IF(AV) (A)

0 25 50 75 100 125 150 25 50 75 100 125 150 175

1 10 100 200

120A

60A

30A

VF, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)

Figure 26. Forward Current vs. Forward Voltage Figure 27. Reverse Recovery Time vs. Current Rate of Change

-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)

Figure 28. Reverse Recovery Charge vs. Current Rate of Change Figure 29. Reverse Recovery Current vs. Current Rate of Change

050-7458 Rev A 10-2005

APT75GP120JDQ3

TYPICAL PERFORMANCE CURVES

4

3

1

2

5

Zero

1

2

3

4

diF/dt - Rate of Diode Current Change Through Zero Crossing.

IF - Forward Conduction Current

IRRM - Maximum Reverse Recovery Current.

trr - Reverse Recovery Time, measured from zero crossing where diode

Qrr - Area Under the Curve Defined by IRRM and trr.

current goes from positive to negative, to the point at which the straight

line through IRRM and 0.25 IRRM passes through zero.

Figure 33. Diode Test Circuit

Figure 34, Diode Reverse Recovery Waveform and Definitions

0.25 IRRM

PEARSON 2878

CURRENT

TRANSFORMER

diF/dt Adjust

30µH

D.U.T.

+18V

0V

Vr

trr/Qrr

Waveform

APT10035LLL

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

ISOTOP®

is a Registered Trademark of SGS Thomson.

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Emitter/Anode Collector/Cathode

Gate

*

r = 4.0 (.157)

(2 places)

4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Emitter/Anode

Emitter/Anode terminals are

shorted internally. Current

handling capability is equal

for either Emitter/Anode terminal.

SOT-227 (ISOTOP®) Package Outline

APT75GP120JDQ3 Datasheet by Microchip Technology

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