RF Wireless Brochure Datasheet by CEL

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2016 RF & Wireless www.ce|.com
NEC XXXXXXXXXX
1
PRODUCTS by APPLICATION
Front End Components
Up to 6GHz Applications 2
LNAs for 2 to 8GHz Applications 3
LNBs for 12 to 20GHz Applications 3
PRODUCT SPECIFICATIONS
RF Switch ICs
SPDTs(SinglePoleDoubleThrow) 4
SP3Ts(SinglePoleTripleThrow)5
DPDTs(DoublePoleDoubleThrow)5
GaAs FETs
LowNoiseGaAsFETs,1to20GHz 5
Silicon MOSFET Devices
RFPowerLD-MOSFETs6
MOSFETforMicrophone
 ImpedanceConversion6
Silicon Bipolar Transistors
SingleTransistors 7
TwinTransistors 8
Silicon RFICs
3VSiliconMMICAmplifiers 8
5VSiliconMMICAmplifiers 9
FrequencyUpconverters 9
FrequencyDownconverters 9
Package Dimensions10
 
About CEL
CEL(CaliforniaEasternLaboratories)isanengineering,sales
andmarketingcompanyfocusedonRFSemiconductors,
OpticalSemiconductorsandWirelessConnectivitySolutions.
CELservesdesigners,OEMsandcontractmanufacturersin
variousRF,WirelessandOpticalmarkets.Withover55years
experienceinhighfrequencydesign,customersupportand
fulfillment,CELisideallypositionedtoprovideitscustomers
withastablesupplyofproductstomeettheirspecificneeds.
CELmaintainsextensiveinventoriesandprovides
engineeringandapplicationsassistanceatitstechnical
centersinSantaClara,CA.,BuffaloGrove,ILandLafayette,
CO.Thecompanysupportscustomersthroughsalesoffices,
salesrepresentativesanddistributorsinnumerouslocations.
CEL Headquarters
4590 Patrick Henry Drive
Santa Clara, CA 95054
Tel: (408) 919-2500
www.cel.com
$®®®®m
2www.cel.com/rf
Wi-Fi • Bluetooth • ZigBee • Automated Meter Reading • Mesh & Home Area Networks • ISM Band Applications
CEL ZIC24xx
System-on-Chip
802.15.4
Transceiver
Transceiver
LNAs
Power
Amplifiers
RFIC Switches
Chipset
Transceiver
LNAs
IN
OUT
5 -6 GHz
2.4 GHz
5 -6 GHz
2.4 GHz
Power
Amplifiers
High/Medium
Power RFIC
Switches
(SPDT, SP3T or DPDT)
Low Power
RFIC Switches
SPDT, SP3T or DPDT
RFIC Switches
UPG2253T6S Front End IC
Transceiver
Front End Components Up to 6GHz Applications
RFIC Switches (additional P/Ns available, see page 4) 450MHz 915MHz 2.4GHz 6GHz
CG2163X3 SPDT,HighPowerandHighIsolationforWLAN 4 4
CG2176X3 SPDT,HighPower&HighIsolationAbsorptiveDualBandSwitch 4 4
CG2179M2 SPDT,Lowcost,InsertionLoss:0.45dB@2.5GHz 4 4 4
CG2185X2 SPDT,forDualBandWLAN,InsertionLoss:0.4dB@6GHz,smallpackage 4 4
CG2214M6 SPDT,InsertionLoss:0.35GHz@2.5GHz,Isolation=25@2.5GHz 4 4 4
CG2415M6 SPDT,DualBandHighPowerforWLAN 4 4 4
CG2430X1 SP3T,InsertionLoss:0.60dB@6GHz,Isolation=25dB@6GHz 4 4 4 4
UPG2162T5N DPDT,InsertionLoss:0.85 dB@6 GHz,27 dBIsolation@6GHz 4 4
UPG2163T5N SPDT,0.5-8GHz,InsertionLoss:0.4dB@2.4GHz,0.5dB@6GHz 4 4 4
UPG2164T5N DPDT,Diversity/TransferSwitch(twoselectableRFpathson) 4 4
UPG2176T5N SPDT,2.4–6GHz,InsertionLoss:0.5dB@2.4GHz,internalterminations 4 4
UPG2406TK SPDT,1.8or2.7Vcontrolvoltage,0.50dBInsertionLoss@2.5GHz 4 4 4
UPG2408TB / TK SPDT,3V,0.50dBInsertionLoss,SOT-363andSMDPackages 4 4 4
UPG2409TB / T6X SPDT,HighPowerwidebandwidth,SOT-363/TSONpackages 4 4 4 T6X only
UPG2415TK / T6X SPDT,forDualBandWLAN,lowinsertionlossforAccessPointapplications T6X only 4 4 4
UPG2422TK SPDT,forDualBandWLAN,1.8-5.3Vcontrolvoltagerange 4 4 4 4
Power Amplifier Transistors (additional P/Ns available, see page 7 & 9) 450MHz 915MHz 2.4GHz 6GHz
NE5550234 +33dBm,2W,7.5VLDMOSFET 4 4
NE5550979A +39.5dBm,9W,7.5VLDMOSFET 4 4
NE664M04 +26dBm,3.6VSiliconDiscrete 4 4 4
NE677M04 +15dBm,3.0VSiliconDiscrete 4 4 4
NE678M04 +18dBm,3.0VSiliconDiscrete 4 4 4
Low Noise Amplifier Transistors 450MHz 915MHz 2.4GHz 6GHz
NE662M04 SiliconDiscrete,NF=1.1,Ga=16.0,OIP3=+22dBm@2GHz 4 4 4
NE3508M04 GaAsFET,NF=0.45,Ga=14.0,OIP3=+31dBm@2GHz 4 4
NE3509M04 GaAsFET,NF=0.40,Ga=17.5,OIP3=+22dBm@2GHz 4 4
LNBs for 12 to 20GHz Applications
4
3
www.cel.com/rf
WiMAX
Transceiver
RFIC &
Transistor LNAs
Low Loss
Pre-Filter
RFIC
LNA
High Rejection
Post-Filter
RFIC
Switches
GPS
Receiver
IC
FIRST
STAGE
SECOND
STAGE
Filter
NE662M04
NE3509M04
NE3510M04
NE662M04
NE3508M04
NE662M04
NE3508M04
THIRD
STAGE
Tuner/
Receiver
20GHz LNB
12GHz LNB
CE3503M4
CE3512K2
CE3503M4 CE3521M4 CE3521M4CE3520K3
1st 2nd 3rd
1st 2nd
Part
Number
NF
TYP
(dB)
Ga
TYP
(dB)
Conditions
Freq.
(GHz)
VDS
(V)
ID
(mA)
KUBand
12GHz
CE3503M4
CE3512K2
0.45
0.30
13.2
13.7
12
12
2
2
10
10
KBand
20GHz
CE3520K3
CE3521M4
0.55
0.70
13.8
11.9
20
20
2
2
10
10
LNAs for 2 to 8GHz Applications
Part Number Description NF
(dB)
Gain
(dB)
P1dB
(dBm) Package
NE662M04 SiliconBipolarTransistor 1.1@2.0GHz 16.0@2.0GHz +11.0 M04
NE3508M04 GaAsHJ-FET 0.45@2.0GHz 14.0@2.0GHz +18.0 M04
NE3509M04 GaAsHJ-FET 0.40@2.0GHz 17.5@2.0GHz +14.0 M04
NE3510M04 GaAsHJ-FET 0.35@2.0GHz 19.0@2.0 GHz +12.0 M04
(See data tables for additional specifications)
(See data tables for additional specifications)
4www.cel.com/rf
SPDTs (Single Pole Double Throw)
Part
Number
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)
Pkg.
Code1Description
Frequency
(GHz, max)
Control
Voltages
(V)
Insertion Loss
(dB)
Isolation
(dB)
Input Power
@ 0.1 dB
compression
point
(dBm)
Input Power
@ 1.0 dB
compression
point
(dBm)
CG2163X3 6.0 1.8,3.0,
5.0
0.40@2.5GHz
0.50@6GHz
40@2.5GHz
31@6GHz –+33@2.5GHz
+32@6GHz X3 HighestIsolation,great2.4and6GHz
performance
CG2176X3 5.85 1.8,3.0,
5.0
0.45@2.5GHz
0.50@3.8GHz
0.55@5.85GHz
30@2.5GHz
25@3.8GHz
22@5.85GHz
– – X3 Absorptive,HighestPowerSwitch
CG2179M2 3.0 1.8,3.0,
5.0 0.45@2.5GHz 26@2.5GHz +30@3GHz – M2 LowCostGeneralPurposeSPDT
CG2185X2 6.0 1.8,3.0,
5.0
0.35@2.5GHz
0.40@6GHz
28@2.5GHz
26@6GHz
+29@2.5GHz
+29@6GHz
+32@2.5GHz
+32@6GHz X2 SPDTspecifiedto6GHzwithavery
small&thinpackage
CG2214M6 3.0 1.8,3.0,
5.0 0.35@2.5GHz 25@2.5GHz +30@3GHz – M6 GeneralPurposeSPDT
CG2415M6 6.0 1.8,3.0,
5.3
0.35@2.5GHz
0.45@6GHz
32@2.5GHz
26@6GH
+31@2.5GHz
+31@6GHz – M6 HighPowerSPDTforWLANAccess
Point,smallsizepackage
UPD5713TK 2.5 1.8,2.8,
3.6 0.95@ 2.5GHz 22.5@ 2.5GHz +17@1GHz +21@1GHz TK SingleControl(1.8-VDD),
smallsizepackage,CMOS
UPG2009TB 3.0 2.7,2.8,
3.0 0.40@ 2.5GHz 25@ 2.5GHz +34@1GHz – TB Highpowerhandling,lowinsertionloss,
highisolation
UPG2030TK 3.0 2.7,2.8,
5.4 0.35@ 2.5GHz 24@ 2.5GHz +27@2.5GHz – TK Mediumpower,smallsizepackage
UPG2155TB 2.5 2.4,2.6,
5.0 0.45@ 2.5GHz 17@ 2.5GHz +37.5@1.8GHz – TB Highpowerhandling,lowharmonics,
highpowerswitch
UPG2163T5N 8.0 2.8,3.0,
5.0
0.40@ 2.5GHz
0.50@ 6GHz
0.90@ 8GHz
38@ 2.5GHz
30 @ 6GHz
23@ 8GHz
–+31@2.5GHz
+29@6GHz T5N Highisolation,
great2.4and6GHzperformance
UPG2176T5N 6.0 2.5,3.0,
5.0
0.45 @ 2.5 GHz
0.70@ 6GHz
27@ 2.5GHz
21@ 6GHz –+37@2.5GHz
+37@2.85GHz T5N Absorptive,highpower
andhighlinearityto6GHz
UPG2214TB 3.0 1.8,3.0,
5.3 0.35@ 2.5GHz 26@ 2.5GHz +23@2.5GHz +27@2.5GHz TB Lowinsertionloss,highisolation,
mediumpower,1.8V-5.3V.
UPG2214TK 3.0 1.8,3.0,
5.3 0.35@ 2.5GHz 26@ 2.5GHz +23@2.5GHz +27@2.5GHz TK Smallsizepackage,lowinseritonloss,
highisolation,mediumpower,1.8V-5.3V.
UPG2406TB 3.0 1.8,
2.7,5.3 0.47@2.5GHz 17@2.5GHz +29@2.5GHz +30.5@2.5GHz TB GeneralPurposeSPDT
UPG2406TK 3.0 1.8,2.7,
5.3 0.47@ 2 .5GHz 17@ 2.5GHz +29@2.5GHz +30.5@2.5GHz TK Smallsizepackage,
costeffectivemediumpower,1.8V-5.3V
UPG2408TB 3.0 2.5,3.0,
5.3 0.50@ 2.5GHz 18@ 2.5GHz +29@2.5GHz – TB LowcostmediumpowerforUHF-3GHz
UPG2408TK 3.0 2.5,3.0,
5.3 0.50@ 2.5GHz 18@ 2GHz +29@2.5GHz – TK Smallsizepackage,
costeffectivemediumpower
UPG2409TB 3.8 2.7,3.0,
5.3 0.45 @ 2.5GHz 26 @ 2.5 GHz +33.5@2.5GHz +35 @2.5GHz TB HighpowerSPDT,forAccessPoints
to3.8GHz
UPG2409T6X 6.0 2.7,3.0,
3.3
0.45@ 2.5GHz
0.65@6GHz
30 @ 2.5 GHz
27 @6 GHz
+34@2.5GHz
+34@6GHz
+36 @2.5GHz
+36 @6GHz T6X Highpower,forAccessPointsto6GHz,
1.5mmQFNpackage
UPG2415TK 6.0 2.7,3.0,
5.3
0.45 @ 2.5GHz
0.65 @ 6GHz
28 @ 2.5 GHz
26 @6 GHz
+31@2.5GHz
+31@6GHz
+34 @2.5GHz
+34 @6GHz TK HighpowerhandlingforAccessPoints
to6GHz,smallsizepackage
UPG2415T6X 6.0 2.7,3.0,
3.3
0.45 @ 2.5GHz
0.55 @ 6GHz
28 @ 2.5 GHz
26 @6 GHz
+31@2.5GHz
+31@6GHz
+35 @2.5GHz
+35 @6GHz T6X HighpowerhandlingforAccessPoints
to6GHz,1.5mmQFNpackage
UPG2422TK 6.0 1.8,3.0,
5.3
0.35@2.5GHz
0.55@6GHz
28@2.5GHz
24@6GHz
+28@2.5GHz
+28@6GHz
+31@2.5GHz
+31@6GHz TK
Lowcost6GHzSPDT,mediumpower,
smallsizepackage,lowinseritonloss,
highisolation,1.8V-5.3V
Notes: 1. See Package Dimensions on page 10
RF Switch ICs
5
www.cel.com/rf
GaAs FETs
DPDTs (Double Pole Double Throw)
Part
Number
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)
Package
Code1Description
Frequency
(GHz, max)
Control
Voltages
(V)
Insertion Loss
(dB)
Isolation
(dB)
Input Power
@0.1 dB
compression
point
(dBm)
Input Power
@1.0 dB
compression
point
(dBm)
UPD5738T6N 2.5 1.5,2.8,
3.6 0.8 @ 1GHz 22 @ 1GHz +15@1GHz +20@1GHz T6N Onlyonecontrolpin,lowfrequency
operation,CMOS,1.5V-3.6V
UPG2162T5N 6.0 2.8,3.0,
5.0
0.60@2.5GHz
0.85@6GHz
30 @ 2.5GHz
27 @ 6GHz –+31@2.5GHz
+29@6GHz T5N BestisolationofallDPDTs,
upto6GHzoperation
UPG2164T5N 6.0 2.8,3.0,
5.0
0.50@2.5GHz
0.70@6GHz
25 @ 2.5GHz
17 @ 6GHz –+31@2.5GHz
+29@6GHz T5N Lowestcost,lowestinsertionlossDPDT.
6GHzoperation.
Notes: 1. See Package Dimensions on page 10
Notes: 1. See Package Dimensions on page 10
SP3Ts (Single Pole Triple Throw)
Part
Number1
TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)
Package
Code1Description
Frequency
(GHz, max)
Control
Voltages
(V)
Insertion Loss
(dB)
Isolation
(dB)
Input Power
@0.1 dB
compression
point
(dBm)
Input Power
@1.0 dB
compression
point
(dBm)
CG2430X1 6.0 1.8,3.0,
5.0
0.50@2.5GHz
0.60@6GHz
28@2.5GHz
25@6GHz
+28@2.5GHz
+28@6GHz
+31@2.5GHz
+31@6GHz X1 SP3Tspecifiedto6GHz
withhighisolation
RF Switch ICs continued
Low Noise GaAs FETs, 1 to 20GHz TypicalSpecifications@TA=25°C
Part
Number
Gate
Length
(μm)
Gate
Width
(μm)
Test
Frequency
(GHz)
NF/GA Bias NFOPT
(dB)
GA
(dB)
IDSS
(mA)
Power Bias P1dB
(dBm)
Package
Code1
Package
DescriptionVDS
(V)
IDS
(mA)
VDS
(V)
IDS
(mA)
CE3503M4 – – 12 2.0 10 0.45 13.2 47 – – – M4 PlasticSMD
CE3512K2 – – 12 2.0 10 0.30 13.7 47 – – – K2 Micro-XPlastic
CE3520K3 – – 20 2.0 10 0.55 13.8 40 – – – K3 Micro-XPlastic
CE3521M4 – – 20 2.0 10 0.70 11.9 40 – – – M4 PlasticSMD
NE3210S01 0.2 160 12 2.0 10 0.35 13.5 40 – – – S01 PlasticSMD
NE3503M04 0.2 160 12 2.0 10 0.55 11.5 40 – – – M04 PlasticSMD
NE3508M04 0.6 800 2 2.0 10 0.45 14.0 90 3.0 30 +18.0 M04 PlasticSMD
NE3509M04 0.6 400 2 2.0 10 0.40 17.5 45 3.0 20 +14.0 M04 PlasticSMD
NE3510M04 0.6 280 2 2.0 10 0.35 19.0 70 3.0 30 +12.0 M04 PlasticSMD
NE3511S02 0.2 160 12 2.0 10 0.30 13.5 40 – – – S02 Micro-XPlastic
NE3512S02 0.2 160 12 2.0 10 0.35 13.5 40 – – – S02 Micro-XPlastic
NE3513M04 0.2 160 12 2.0 6 0.45 13.0 30 – – – M04 PlasticSMD
NE3514S02 0.2 160 20 2.0 10 0.75 10.0 40 – – – S02 Micro-XPlastic
NE3515S02 0.2 200 12 2.0 10 0.3 12.5 60 3.0 25 +14.0 S02 Micro-XPlastic
NE3516S02 0.2 160 12 2.0 10 0.35 14.0 30 – – – S02 Micro-XPlastic
NE3517S03 0.2 160 20 2.0 10 0.70 1 3 . 5  40 – – – S03 Micro-XPlastic
NE3520S03 – 160 20 2.0 10 0.65 13.5 40 – – – S03 Micro-XPlastic
NE3521M04 – – 20 2.0 10 0.85 11 45 – – – M04 PlasticSMD
NE4210S01 0.2 160 12 2.0 10 0.50 13.0 40 – – – S01 PlasticSMD
Notes: 1. See Package Dimensions on page 10
6www.cel.com/rf
Part
Number
POUT
(dBm)
TYP
Linear Gain
(dB)
TYP
Test Conditions
Package Code1Package Description
Freq
(GHz)
PIN
(dBm)
VDS
(V)
IDSQ
(mA)
NE5531079A +40.0 20.5 0.46 +25 7.5 200 79A PlasticSMD
NE55410GR +40.4 25 2.1 +16 28 120 GR PlasticSMD
NE5550234 +33
+32.2
23.5
18.3
0.46
0.90
+15
+17
7.5
7.5
40
40 34 PlasticSMD
NE5550279A +33 22.5 0.46 +15 7.5 40 79A PlasticSMD
NE5550779A +38.5
+37.4
22
17
0.46
0.90
+25
+27
7.5
7.5
140
140 79A PlasticSMD
NE5550979A +39.5
+38.6
22
16
0.46
0.90
+25
+27
7.5
7.5
200
200 79A PlasticSMD
RF Power LD-MOSFETs Typical Specifications @ TC = 25°C
Part
Number
Supply
Voltage
(V)
Circuit
Current
(μA)
Input
Capacitance
(pF)
Voltage Gain
(dB)
Output Noise
Voltage
(dBV)
Total Harmonic
Distortion
(%)
HBM ESD
(KV) Package Code1
NE5820M53 2 85 1.5 -3 -114 0.1 >8 M53
MOSFET for Microphone Impedance Conversion
Notes: 1.See Package Dimensions on page 10
Notes: 1. See Package Dimensions on page 10
Silicon MOSFET Devices
7
www.cel.com/rf
Part
Number
JEITA1
Part
Number
NPN /PNP
fT
TYP
(GHz)
Test
Freq
(GHz)
Test
VCE
(V)
NF
TYP
(dB)
MAG
TYP
(dB)
hFE
(TYP)
VCEO
MAX
(V)
Ic
MAX
(mA)
Package2
Type
NE202930 NA NPN 11 1 5 1.5 15 140 6 100 30 / SOT-323
NE46134 2SC4536 NPN 5.3 1 10 2 9 120 15 250 34 / SOT-89
NE461M02 2SC5337 NPN 5.3 1 10 2 10 120 15 250 M02 / SOT-89
NE46234 2SC4703 NPN 6 1 5 2.3 – 150 12 150 34 / SOT-89
NE462M02 2SC5338 NPN 6 1 5 2.3 – 150 12 150 M02 / SOT-89
NE66219 2SC5606 NPN 21 2 2 1.2 14 80 3.3 35 19 / SOT-523
NE662M04 2SC5508 NPN 25 2 2 1.1 19 70 3.3 35 M04 / SOT-343F
NE663M04 2SC5509 NPN 15 2 2 1.2 14 70 3.3 100 M04 / SOT-343F
NE664M04 2SC5754 NPN 20 2 3 – 12 60 5 500 M04 / SOT-343F
NE67718 2SC5750 NPN 15 2 3 1.7 15 120 6 50 18 / SOT-343
NE67739 2SC5454 NPN 14.5 2 3 1.5 14 11 0 6 50 39 / SOT-143
NE677M04 2SC5751 NPN 15 2 3 1.7 16 120 6 50 M04 / SOT-343F
NE67818 2SC5752 NPN 12 2 3 1.7 13 120 6 100 18 / SOT-343
NE67839 2SC5455 NPN 12 2 3 1.5 14 110 6 100 39 / SOT-143
NE678M04 2SC5753 NPN 12 2 3 1.7 13.5 120 6 100 M04 / SOT-343F
NE68018 2SC5013 NPN 10 2 6 1.8 13 100 10 35 18 / SOT-343
NE68019 2SC5008 NPN 8 2 3 1.9 11.5 120 10 35 19 / SOT-523
NE68030 2SC4228 NPN 8 2 3 1.9 – 100 10 35 30 / SOT-323
NE68033 2SC3585 NPN 10 2 6 1.8 10 100 10 35 33 / SOT-23
NE68039 2SC4095 NPN 10 2 6 1.8 12 100 10 35 39 / SOT-143
NE68118 2SC5012 NPN 9 1 8 1.2 18 100 10 65 18 / SOT-343
NE68119 2SC5007 NPN 7 1 3 1.4 16.5 120 10 65 19 / SOT-523
NE68130 2SC4227 NPN 7 1 3 1.4 13 140 10 65 30 / SOT-323
NE68133 2SC3583 NPN 9 1 8 1.2 15 100 10 65 33 / SOT-23
NE68139 2SC4094 NPN 9 1 8 1.2 17 150 10 65 39 / SOT-143
NE68518 2SC5015 NPN 12 2 3 1.5 13 110 6 30 18 / SOT-343
NE68519 2SC5010 NPN 12 2 3 1.5 11 110 6 30 19 / SOT-523
NE68539 2SC4957 NPN 12 2 3 1.5 – 110 6 30 39 / SOT-143
NE85618 2SC5011 NPN 6.5 1 10 1.1 16 120 12 100 18 / SOT-343
NE85619 2SC5006 NPN 4.5 1 3 1.2 12.5 120 12 100 19 / SOT-523
NE85630 2SC4226 NPN 4.5 1 3 1.2 – 110 12 100 30 / SOT-323
NE85633 2SC3356 NPN 7 1 10 1.1 13 120 12 100 33 / SOT-23
NE85634 2SC3357 NPN 6.5 1 10 1.8 10 120 12 100 34 / SOT-89
NE85639 2SC4093 NPN 7 1 10 1.1 14.2 120 12 100 39 / SOT-143
NE856M02 2SC5336 NPN 6.5 1 10 1.1 13.5 120 12 100 M02 / SOT-89
NE97733 2SA1977 PNP 8.5 1 -8 1.5 – 60 -12 -50 33 / SOT-23
NE97833 2SA1978 PNP 5.5 1 -10 2 – 40 -12 -50 33 / SOT-23
Single Transistors
Notes: 1.JEITA ( Japan Electronics and Information Technology Association ) equivalent part number 2. See Package Dimensions on page 10
Silicon Bipolar Transistors
Silicon RFICs
8www.cel.com/rf
Twin Transistors
Part
Number
TEST
f
(GHz)
NF/GA
VCE
(V)
NF/GA
IC
(mA)
NF
TYP
(dB)
GA
TYP
(dB)
MAG
TYP
(dB)
|S21E|fT
TYP
(GHz)
hFE
TYP
IC
MAX
(mA)
Die Pkg.
Code1
Package
Style
VCE
(V)
IC
(mA)
TYP
(dB)
UPA800T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 2 each NE680 T SOT-363
UPA801T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363
UPA802T 1.0 3 7 1.4 14.0 16.0 3 7 12.0 7.0 100 65 2 each NE681 T SOT-363
UPA806T 2.0 3 3 1.5 7.5 11.0 3 10 8.5 12.0 110 30 2 each NE685 T SOT-363
UPA810T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 2 each NE856 T SOT-363
UPA811T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 2 each NE680 T SOT-363
UPA812T 1.0 3 7 1.4 14 16.0 3 7 12.0 7 100 65 2 each NE681 T SOT-363
Notes: 1. See Package Dimensions on page 10
3V Silicon MMIC Amplifiers
Notes: 1. f = 500 MHz test condition 2. f = 900 MHz test condition 3. f = 1900 MHz test condition 4. 100 – 2400 MHz with output port matching 5. ZL = 50 Ω for all Electrical Characteristics
6. See Package Dimensions on page 10
Part
Number
Typical
Frequency
Range
@ 3dB
down
(MHz)
ELECTRICAL CHARACTERISTICS5 (TA = 25°C)
Package
Code6
Package
Style
VCC
(V)
ICC
(mA)
NF
(dB)
Gain
(dB)
RLIN
(dB)
RLOUT
(dB)
P1dB
(dBm)
ISOL
(dB)
MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP
UPC2745TB12700 3 5 7.5 10 6.0 9 12 14 11 5.5 -3.0 38 TB SOT-363
UPC2746TB11500 3 5 7.5 10 4.0 16 19 21 13 8.5 -3.7 45 TB SOT-363
UPC2748TB21500 3 4.5 6 8 2.8 16 19 21 11.5 8.5 -8.5 40 TB SOT-363
UPC2749TB32900 3 4 6 8 4 13 16 18.5 10 13 -12.5 30 TB SOT-363
UPC2762TB32900 3 – 27 35 7.0 11.5 15.5 17.5 8.5 12 +7 25 TB SOT-363
UPC2771TB22200 3 – 36 45 6 19 21 24 14 9 +11.5 30 TB SOT-363
UPC8178TK32700 3 1.4 1.9 2.4 5.5 9.0 11.0 13.5 8 – -8.0 41 TK 6pinRecessedLead
UPC8179TK3Note4 3 2.9 4.0 5.4 5.0 13.0 15.5 17.5 7 – 0.5 42 TK 6pinRecessedLead
Silicon Bipolar Transistors continued
9
www.cel.com/rf
Silicon RFICs continued
5V Silicon MMIC Amplifiers
Notes: 1. f = 500 MHz test condition 2. f = 1000 MHz test condition 3. ZL = 50 Ω for all Electrical Characteristics 4. See Package Dimensions on page 10
Part
Number
Typical
Frequency
Range
@ 3dB
down
(MHz)
ELECTRICAL CHARACTERISTICS3 (TA = 25°C)
Package
Code4
Package
Style
VCC
(V)
ICC
(mA)
NF
(dB)
Gain
(dB)
RLIN
(dB)
RLOUT
(dB)
P1dB
(dBm)
ISOL
(dB)
MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP
UPC2708TB22900 5 20 26 33 6.5 13 15 18.5 11 20 +9.2 23 TB SOT-363
UPC2709TB22300 5 19 25 32 5.0 21 23 26.5 10 10 +8.7 31 TB SOT-363
UPC2710TB11000 5 16 22 29 3.5 30 33 36.5 6 12 +10.8 39 TB SOT-363
UPC3223TB23200 5 15 19 24 4.5 20.5 23 22.5 12 12 +6.5 33 TB SOT-363
UPC3224TB23200 5 7.0 9.0 12.0 4.3 19 21.5 24 12 17 -3.5 40 TB SOT-363
Part
Number
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Package
Code4
Package
Style
IF Input
Frequency
Range
@3 dB Down
(MHz)
RF Output
Frequency
Range
(MHz)
VCC
(V)
ICC
(mA)
Conversion
Gain
(dB)
PSAT 3
(dBm)
Noise
Figure
(dB) OIP3
TYP TYP TYP TYP TYP TYP
UPC8106TB150-400 400-2000 3.0 9.0 10.0 -2.0 8.5 +5.5 TB SOT-363
UPC8172TB250-400 800-2500 3.0 9.0 8.5 0.0 10.4 +6.0 TB SOT-363
Part
Number
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Package
Code2
Package
Style
RF Input
Frequency
Range
@3 dB Down
(MHz)
IF Output
Frequency
Range
@3 dB Down
(MHz)
VCC
(V)
ICC
(mA)
Conversion
Gain
(dB)
PSAT
(dBm)
Noise
Figure
(dB)
TYP TYP TYP TYP TYP TYP
UPC2756TB 100-2000 10-300 3.0 5.9 14 -12 13 TB SOT-363
UPC2757TB1100-2000 20-300 3.0 5.6 13 -8 13 TB SOT-363
UPC2758TB1100-2000 20-300 3.0 11 17 -4 13 TB SOT-363
UPC8112TB1800-2000 100-300 3.0 8.5 13 -3 11.2 TB SOT-363
Frequency Downconverters
Note: 1. AGC Amp and Mixer Block only 2. See Package Dimensions on page 10
Notes: 1. RF = 900 MHz, LO = 660 MHz, PLO = -5 dBm 2. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dBm 3. PIN = 0 dBm 4.See Package Dimensions on page 10
Frequency Upconverters
INCH-ERIE.
10 www.cel.com/rf
Top View Side View
19 Package (0.8 x 1.6 x 0.75)
Top View Side View
30 Package (1.25 x 2.0 x 0.9)
Top View Side View
33 Package (1.5 x 2.9 x 1.4)
Bottom View Side View
34 Package (2.5 x 4.5 x 1.5)
Top View Side View
39 Package (1.5 x 2.9 x 1.1)
Top View Side View
79A Package (4.2 x 4.4 x 0.9)
Bottom View
Bottom View Side View
M02 Package (2.45 x 4.5 x 1.5)
Top View Side View
M4 / M04 Package (1.25 x 2.0 x 0.6)
Top View Side View
M53 Package (1.0 x 1.2 x 0.33)
Top View Side View
K2 / K3 / S02 / S03 Package (2.6 x 2.6 x 1.5)
Top View Side View
T / TB / M2 Package (1.25 x 2.0 x 0.9)
Top View Bottom ViewSide View
M6 / TK Package (1.1 x 1.5 x 0.55)
Top View Bottom ViewSide View
T5N / X3 Package (1.5 x 1.5 x 0.37)
Top View Bottom ViewSide View
T6N / T6X Package (1.5 x 1.5 x 0.37)
Top View Side View
18 Package (1.25 x 2.0 x 0.9)
Top View Bottom View
X2 Package (1.0 x 1.0 x 0.37)
Side View
Top View Bottom ViewSide View
X1 Package (1.5 x 1.5 x 0.37)
Top View Side View
S01 Package (2.0 x 2.0 x 1.5)
GR Package (5.2 x 5.5 x 0.9)
Top View Bottom ViewSide View
Package Dimensions Units in mm
These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet.
Learn more
www.cel.com/rf
© 2016 California Eastern Laboratories 05.2016 / 5C
Contact Us
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Santa Clara, CA 95054
Tel: (408) 919-2500
E-mail: rfw@cel.com
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