IXYS
1 - 5
© 2000 IXYS All rights reserved
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
tfi = 150 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 mA, VGE = 0 V 600 V
VGE(th) IC= 250 mA, VCE = VGE 2.5 5 V
ICES VCE = 0.8 • VCES TJ = 25°C 200 mA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.5 V
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching
IGBT & FRED diode
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Buck converters
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
98502C (8/99)
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 1 MW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C75A
IC90 TC = 90°C50A
ICM TC = 25°C, 1 ms 200 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 VCES
PCTC = 25°C 250 W
VRRM 600 V
IFAVM TC = 70°C; rectangular, d = 50% 60 A
IFRM tP z<10 ms; pulse width limited by TJ 600 A
PDTC = 25°C 150 W
TJ-40 ... +150 °C
TJM 150 °C
Tstg -40 ... +150 °C
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
IGBT
Diode
Case
IXGN 50N60BD2
IXGN 50N60BD3
HiPerFASTTM IGBT
with HiPerFRED
Buck & boost configurations
SOT-227B, miniBLOC
E 153432
2
1
4
3
...BD2 ...BD3
IXGN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
IXGN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 35 50 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies 4100 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 290 pF
Cres 50 pF
Qg110 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC
Qgc 35 nC
td(on) 50 ns
tri 50 ns
td(off) 110 250 ns
tfi 150 220 ns
Eoff 3.0 4.0 mJ
td(on) 50 ns
tri 60 ns
Eon 3.0 mJ
td(off) 200 ns
tfi 250 ns
Eoff 4.2 mJ
RthJC 0.50 K/W
RthCK 0.05 K/W
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions typ. max.
IRTVJ = 25°C VR= VRRM 650 uA
TVJ = 150°C 2.5 mA
VFIF= 60 A, TVJ = 150°C 1.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TVJ = 25°C 2.40 V
IRM IF= IC90, VGE = 0 V, -diF/dt = 100 A/ms 8.0 A
VR= 540 V
trr IF= 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C35 ns
RthJC 0.85 K/W
IXGN 50N60BD2
IXGN 50N60BD3
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
:I IXYS
//
//
i/
‘///
//
3 - 5
© 2000 IXYS All rights reserved
VCE - Volts
0246810
I
C
- Amperes
0
40
80
120
160
200
VGE - Volts
0246810
I
C
- Amperes
0
20
40
60
80
100
VCE-Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
10
100
1000
10000
TJ - Degrees C
25 50 75 100 125 150
V
CE (sat)
- Normalized
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100
9V
5V
VCE = 10V
TJ = 25°CTJ = 25°C
IC = 25A
IC = 50A
IC = 100A
TJ = 125°C
f = 1Mhz
7V
VGE = 15V
TJ = 25°C
VCE - Volts
012345
I
C
- Amperes
0
20
40
60
80
100 TJ = 125°C
Ciss
Coss
7V
5V
VGE = 15V
13V
11V
9V
9V
VGE = 15V
13V
11V
VGE = 15V
13V
7V
11V
Crss
5V
IXGN 50N60BD2
IXGN 50N60BD3
Fig. 2. Extended Output Characteristics
Fig. 1. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 3. Saturation Voltage Characteristics
Fig. 5. Saturation Voltage Characteristics Fig. 6. Junction Capacitance Curves
:I IXYS
4 - 5
© 2000 IXYS All rights reserved
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
VCE - Volts
0 100 200 300 400 500
I
C
- Amperes
0.1
1
10
100
Qg - nanocoulombs
0 50 100 150 200 250 300
V
GE
- Volts
0
5
10
15
20
RG - Ohms
0 102030405060
E
(OFF)
- millijoules
0
2
4
6
8
10
12
E
(ON)
- millijoules
0
1
2
3
4
5
6
IC - Amperes
0 20406080100
E
(OFF)
- milliJoules
0
2
4
6
8
10
12
E
(ON)
- millijoules
0
1
2
3
4
5
6
VCE = 250V
IC =50A
E(ON)
E(OFF)
E(ON)
E(OFF)
TJ = 125°C
RG = 5.2
dV/dt < 5V/ns
TJ = 125°C
600
E(OFF)
E(OFF)
RG = 4.7
IC =25A
TJ = 125°C
IC = 100A
IC = 50A
E(ON)
E(ON)
IXGN 50N60BD2
IXGN 50N60BD3
Fig. 11. Transient Thermal Resistance
Fig. 8. Dependence of tfi and EOFF on RG.
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area
5 - 5
© 2000 IXYS All rights reserved
200 600 10000 400 800
80
90
100
110
120
130
140
0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
ts
K/W
0 200 400 600 800 1000
0
5
10
15
20
0
1
2
3
4
VFR
diF/dt
V
200 600 10000 400 800
0
20
40
60
80
100 1000
0
1000
2000
3000
4000
012
0
20
40
60
80
100
120
140
160
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/ s
A
V
nC
A/ sA/ s
trr
ns
tfr
A/ s
µs
DSEP 60-06A
ZthJC
IF=120A
IF= 60A
IF= 30A
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 60A
Fig. 14 Peak reverse current IRM
versus -diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
Fig. 12 Forward current IF versus VF
TVJ= 100°C
VR = 300V TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
Qr
IRM
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
IF=120A
IF= 60A
IF= 30A
tfr
VFR
Fig. 18 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.324 0.0052
2 0.125 0.0003
3 0.201 0.0385
TVJ= 25°C
TVJ=150°C
TVJ=100°C
IXGN 50N60BD2
IXGN 50N60BD3
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