—
FAIRCHILD
—
SEMICONDUCTOR”
0.230 (5.84) < \‘i‘:="" 3414="">0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45°
0.046 (1.16)
0.036 (0.92)
13
0.030 (0.76)
NOM
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.255 (6.47)
0.225 (5.71)
Ø0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300306 6/01/01 1 OF 4 www.fairchildsemi.com
1
EMITTER
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
FAIRCHILD
—
SEMICONDUCTOR”
www.fairchildsemi.com 2 OF 4 6/01/01 DS300306
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BVCEO 25 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BVEBO 12 — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BVCBO 25 — V
Collector-Emitter Leakage VCE = 12 V, Ee = 0 ICEO — 100 nA
Reception Angle at 1/2 Sensitivity θ±8 Degrees
On-State Collector Current L14F1 Ee = .125 mW/cm2, VCE = 5 V(7) IC(ON) 7.5 — mA
On-State Collector Current L14F2 Ee = .125 mW/cm2, VCE = 5 V(7)IC(ON) 2.5 mA
Rise Time IC= 10 mA, VCC = 5 V, RL=100 Ωtr300 µs
Fall Time IC= 10 mA, VCC = 5 V, RL=100 Ωtf250 µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector to Emitter Breakdown Voltage VCEO 25 V
Collector to Base Breakdown Voltage VCBO 25 V
Emitter to Base Breakdwon Voltage VEBO 12 V
Power Dissipation (TA= 25°C)(1) PD300 mW
Power Dissipation (TC= 25°C)(2) PD600 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
L14F1 L14F2
HERMETIC SILICON
PHOTODARLINGTON
FAIRCHILD
SEMICONDUCTOR”
a
M
w
o
N
Figure 1. Light Current vs. Collector to Emitter Voltage
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.1
1.0
10
100
5101520253035
IL, NORMALIZED LIGHT CURRENT
Figure 4. Angular Response
0
-90
°
40
30
20
10
50
60
90
80
70
100
110
-70
°
-50
°
-30
°
-10
°
10
°
30
°
50
°
70
°
90
°
RELATIVE AMPLITUDE
Figure 2. Relative Light Current vs. Ambient Temperature
.01
.02
.04
.08
.06
-50 -25 0 25
.1
.2
.4
.6
.8
2
4
6
8
1.0
10
1251007550
IL / IL @25
°C
,
RELATIVE LIGHT CURRENT
T, TEMPERATURE (
°C)
IL, LIGHT CURRENT (mA)
Figure 6. Light Current vs. Relative Switching Speed
0.1
1.0
10
100
0.01 0.1 1.0 10010
5.0 mW/cm
2
2.0
1.0
NORMALIZED TO:
V
CE
= 5 V
Ee = .2 mW/cm2
Figure 3. Spectral Response
0.4
400 600
0.8
0.7
0.6
0.5
0
0.3
0.2
0.1
0.9
1.0
500 900 12001000 1100
RELATIVE SPECTRAL RESPONSE
800700
λ, WAVE LENGTH (NANOMETERS
)
DEGREES
RELATIVE SWITCHING SPEED
td + tr + ts + tf
.5
.2
.1
.05
V
CE
= 5 V
H = .2 mW/cm
2
NORMALIZED TO:
R
L
= 100 Ω
I
L
= 10 mA
LOAD RESISTANCE
10 Ω
100 Ω
1000 Ω
V
CC
= 10 V
OUTPUT
PULSE
tON = td + trtOFF = ts + tf
INPUT PULSE
td
trts
tf
INPUT
LED56
LED
L14F
RLOUTPUT
I
90%
10%
1.0 V
Figure 5. Test Circuit and Voltage Waveforms
VCC
DS300306 6/01/01 3 OF 4 www.fairchildsemi.com
L14F1 L14F2
HERMETIC SILICON
PHOTODARLINGTON
FAIRCHILD
—
SEMICONDUCTOR”
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300306 6/01/01 4 OF 4 www.fairchildsemi.com
L14F1 L14F2
HERMETIC SILICON
PHOTODARLINGTON