:IIXYS
Efficiency Through Technology
RELIABILITY REPORT
2008
Power Semiconductor Devices
January 2006 - December 2007
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054
USA Published February 2008
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
www.ixys.com
Failure Modes
Sensitive Parameters:
Failure Modes:
Sensitive Parameters:
AF: acceleration lactor
UCL: upper confidence limit (60%)
Failure Modes:
Sensitive Parameters:
Failure Modes:
Sensitive Parameters:
Failure modes:
Sen e Paramete
Total Failures @ 60% UCL:
MTTF: Mean Time To Failures
AT: max T' min T‘ during Test
2
QUALITY AND RELIABILITY
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufacture of
medium to high power devices, reliability has
assumed a primary position in raw material selection,
design, and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power
Semiconductor products. We believe IXYS products
should be the most reliable components in your
system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not tested-
in. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on www.ixys.com.
RELIABILITY TESTS
High Temperature Reverse Bias (HTRB)
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, VTH.
High Temperature Gate Bias (HTGB)
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
Temperature Cycle
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
Humidity Test
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, IGSS, IGES,
VTH.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause thermal and electrical performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM,
VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k } (1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
k: Boltzmann’s constant 8.6·10-5 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
N = r + dr (2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
FIT: 1 FIT = 1 failure / 109 hrs
TABLES 3:
ΔT: max Tj - min Tj during Test
DEFINITION OF FAILURE
Failure criteria are defined according to IEC 60747
standard series
Summar
y
of Tables 1A - 1H: HTRB
Table 1A Table 1B Table 1C Table 1D Table 1E Table 1F Table 1G Table 1H
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode ISOPLUS
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*)
Failure Rate [FIT] 125°C, 60% UCL 592 12483 45956 17190 1939 845 16855 -
Failure Rate [FIT] 90°C, 60% UCL 35 747 2752 1029 116 51 1009 -
Total Lots Tested 169 13 15 17 35 24 12 20
Total Devices Tested 4932 116 160 170 645 570 210 456
Total Actual 20100011
Failures 60% UCL {eq. (2)} 3 0.92 2 0.92 0.92 0.92 2 -
Total Equivalent Device Hours
@ 125°C {AF eq. (1)} 5066720 73702 43520 53520 474548 1089301 118658 465622
MTTF 125°C 60% UCL 193 9 2 7 59 135 7 -
(Years) 90°C 60% UCL 3220 153 41 111 983 2257 113 -
Summar
y
of Table 2A - 2C: HTGB
Table 2A Table 2B Table 2C
MOSFET/IGBT MOSFET/IGBT ISOPLUS
discrete device *) Module
Failure Rate [FIT] 125°C, 60% UCL 231 4606 -
Failure Rate [FIT] 90°C, 60% UCL 75 1486 -
Total Lots Tested 138 15 15
Total Devices Tested 4030 210 460
Total Actual 0 0 0
Failures 60% UCL {eq. (2)} 0.92 0.92 -
Total Equivalent Device Hours
@ 125°C {AF eq. (1)} 3976960 199740 506800
MTTF 125°C 60% UCL 493 25 -
(Years) 90°C 60% UCL 1530 77 -
*) including ISOPLUS
IXYS Semiconductor GmbH 3
y Cy le
Summar
y
of Tables 3A - 3H: Power C
y
cl
e
Table 3A Table 3B Table 3C Table3D Table 3E Table 3F Table 3G Table 3H
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*)
Total Lots Tested 15 7 5 5 10 6 9 2
Total Devices Tested 344 139 50 50 190 224 140 100
Total Failures 00000000
Total Device Cycles 2960000 751300 850000 370000 410000 1520088 380000 280000
Summar
y
of Tables 4A - 4J: Tem
p
erature C
y
cle
Table 4A Table 4B Table 4C Table4D Table 4E Table 4F Table 4G Table 4H Table 4J
MOSFET/IGBT MOSFET/IGBT Thyr./Diode Controller/ FRED Schottky Thyr./Diode Isoplus Breakover
discrete device *) Module Module Rec. Bridge*) *) Diode*) discrete device*) Diode
Total Lots Tested 13 12 27 20 25 19 17 18 4
Total Devices Tested 353 119 290 210 450 614 300 532 80
Total Failures 002000000
Total Device Cycles 135700 8400 19500 14900 29900 302000 14300 198200 4000
Summar
y
of Tables 5A, 5E - 5J: Humidit
y
Tes
t
Table 5A Table 5E Table 5F Table 5G Table 5H Table 5J
MOSFET/IGBT FRED Schottky Thyr./Diode Isoplus Breakover
discrete device *) *) Diode*) discrete device*) Diode
Total Lots Tested 489324
Total Devices Tested 80 138 294 60 40 80
Total Failures 001000
Total Device Cycles 24800 11088 64384 3840 1920 3840
*) including ISOPLUS
IXYS Semiconductor GmbH 4
TABLE 1A: MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IXBH16N170 TP0619 960 125 1000 30 0 30000
2 IXBH16N170 TP0619 960 125 1000 30 0 30000
3 IXBH40N160 1513 1280 125 168 20 0 3360
4 IXDH20N120 1436 960 125 168 20 0 3360
5 IXDH20N120D1 2065 960 125 168 20 0 3360
6 IXEH28N60C2D2 1578 600 125 1000 20 0 20000
7 IXFA7N80P K533 640 125 1000 30 0 30000
8 IXFB100N50P SP0737 460 125 1000 30 0 30000
9 IXFB44N100P SP0721 800 125 1000 30 0 30000
10 IXFH12N120P SP0715 960 125 1000 30 0 30000
11 IXFH15N100P SK0636 800 125 1000 30 0 30000
12 IXFH20N100P SP0716 800 125 1000 30 0 30000
13 IXFH20N60 SK0544 480 125 1000 30 0 30000
14 IXFH22N50P N/A 400 125 1000 30 0 30000
15 IXFH26N60Q SK0604 480 125 1000 30 0 30000
16 IXFH69N30P SK0527 240 125 1000 30 0 30000
17 IXFK21N100Q SP0737 800 125 1000 30 0 30000
18 IXFK44N55Q SP0737 440 125 1000 30 0 30000
19 IXFL60N80P SP0605 640 125 1000 30 0 30000
20 IXFN82N60P TJ0645E 480 125 1000 30 0 30000
21 IXFP12N50PM K550 400 125 1000 30 0 30000
22 IXFQ14N80P SK0709 640 125 1000 30 0 30000
23 IXFR12N100Q TP0703 800 125 1000 30 0 30000
24 IXFR14N100Q2 SP0732 800 125 1000 30 0 30000
25 IXFR26N100P SP0742 800 125 1000 30 0 30000
26 IXFX48N50Q ZP0545 400 125 1000 30 0 30000
27 IXFX73N30Q SK0613 240 125 1000 30 0 30000
28 IXFX90N30 SK0613 240 125 1000 30 0 30000
29 IXGH20N170P K0716E1 960 125 1000 30 0 30000
30 IXGH20N170P TP0632 960 125 1000 30 0 30000
31 IXGH25N250 TJ0600E 960 125 1000 30 0 30000
32 IXGH28N60B3D1 SP0732 480 125 1000 30 0 30000
33 IXGH30N120B3 TP0606 960 125 1000 30 0 30000
34 IXGH36N60B3D1 SP0732 480 125 1000 30 0 30000
35 IXGH48N60B3 SK0607 480 125 1000 30 0 30000
36 IXGH64N60B3 SK0608 480 125 1000 30 0 30000
37 IXGH72N60B3 SK0608 480 125 1000 30 0 30000
38 IXGH8N100 N/N 800 125 1000 30 0 30000
39 IXGK28N140B3H1 TP0651 960 125 1000 30 0 30000
40 IXGN200N60A2 SP0723 480 125 1000 30 0 30000
41 IXGP120N33TBM-A K723 264 125 1000 30 0 30000
42 IXGP50N33TC K0652 264 125 1000 30 0 30000
43 IXGP70N33TBM-A K726 264 125 1000 30 0 30000
44 IXGP70N33TBM-A K728 264 125 1000 30 0 30000
45 IXGP90N33TB K06251 264 125 1000 30 0 30000
46 IXGP90N33TBM-A K06251 264 125 1000 30 0 30000
47 IXGQ120N30TCD1 SK0631 240 125 1000 30 0 30000
48 IXGQ120N33TB SK0651 264 125 1000 30 0 30000
49 IXGQ120N33TCD1 SK0639 264 125 1000 30 0 30000
50 IXGQ150N30TCD1 SK0631 240 125 1000 30 0 30000
51 IXGQ150N33TCD1 SK0639 264 125 1000 30 0 30000
52 IXGQ160N30PB SK0601 240 125 1000 60 0 60000
53 IXGQ160N30PB SK0601 240 125 1000 30 0 30000
54 IXGQ160N30PB SK0601 240 125 1000 30 0 30000
55 IXGQ160N30PB SK0601 240 125 1000 30 0 30000
56 IXGQ180N33TB SK0711 264 125 1000 30 0 30000
57 IXGQ180N33TC SK0649 264 125 1000 30 0 30000
58 IXGQ180N33TCD1 SK0639 264 125 1000 30 0 30000
59 IXGQ200N30PB SK0631 240 125 1000 30 0 30000
60 IXGQ240N30PB SK0631 240 125 1000 30 0 30000
HTRB (Tables 1A .. 1J)
IXYS Semiconductor GmbH 5
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
61 IXGQ240N30PB SK0631 240 125 1000 30 0 30000
62 IXGQ240N30PB SK0631 240 125 1000 30 0 30000
63 IXGQ240N30PB SK0631 240 125 1000 30 0 30000
64 IXGQ70N33TB SK0650 264 125 1000 30 0 30000
65 IXGQ85N33PCD1 SK0613 264 125 1000 27 0 27000
66 IXGQ85N33PCD1 SK0638 264 125 1000 30 0 30000
67 IXGQ86N30PB K0543 240 125 1000 30 0 30000
68 IXGQ90N27PB SK0621 216 125 1000 30 0 30000
69 IXGQ90N27PB SK0640 216 125 1000 30 0 30000
70 IXGQ90N30TCD1 SK0631 240 125 1000 30 0 30000
71 IXGQ90N33TC SK0649 264 125 1000 30 0 30000
72 IXGQ90N33TCD1 SK0639 264 125 1000 30 0 30000
73 IXGQ90N33TCD1 SK0728 264 125 1000 30 0 30000
74 IXGR120N60C2 SP0722 480 125 1000 30 0 30000
75 IXGR48N60C3D1 SP0722 480 125 1000 30 0 30000
76 IXGX120N60B SP0719 480 125 1000 30 0 30000
77 IXGX72N60B3H1 SP0739 480 125 1000 30 0 30000
78 IXKC13N80C 1769 640 125 1000 20 0 20000
79 IXKC25N80C 1590 640 125 1000 20 0 20000
80 IXKH20N60C5 1631 480 125 1000 20 0 20000
81 IXKH35N60CS 1984 480 125 168 20 0 3360
82 IXKH35N60CS 1986 480 125 168 20 0 3360
83 IXKP10N60C5M 1693 480 150 1000 20 0 20000
84 IXKP13N60C5M 1716 480 150 1000 20 0 20000
85 IXKP20N60C5 1653 480 125 1000 20 0 20000
86 IXKP24N60C5 1671 480 150 800 20 0 16000
87 IXKR25N80C 1521 640 125 168 20 0 3360
88 IXKT70N60C5 2068 480 125 1000 20 0 20000
89 IXSH30N60B2D1 SP0506 480 125 1000 30 0 30000
90 IXSK40N60CD1 SK0722 480 125 1000 30 0 30000
91 IXTA36N30P SK0603 240 125 1000 30 0 30000
92 IXTA36N30P K0621 240 125 1000 30 0 30000
93 IXTA36N30P K640 240 125 1000 30 0 30000
94 IXTA50N25T K545 200 125 1000 30 0 30000
95 IXTA50N28T K0606 224 125 1000 30 2 30000 no deviations after 168h
96 IXTA50N28T K634 224 125 1000 30 0 30000
97 IXTA50N28T K640 224 125 1000 30 0 30000
98 IXTA60N20T K545 160 125 1000 30 0 30000
99 IXTA60N20T SK0601 160 125 1000 30 0 30000
100 IXTA75N10P K0531 80 125 1000 30 0 30000
101 IXTA76N25T K0704 200 125 1000 25 0 25000
102 IXTC110N25T SP0721 200 125 1000 30 0 30000
103 IXTC200N075T SP0627 60 125 1000 30 0 30000
104 IXTH130N20T SP0721 160 125 1000 30 0 30000
105 IXTH150N17T SK0718 140 125 1000 30 0 30000
106 IXTH160N15T SK0721 120 125 1000 30 0 30000
107 IXTH1N80P TP0604 640 125 1000 30 0 30000
108 IXTH30N50L TK0738 400 125 1000 30 0 30000
109 IXTH3N100P TP0639 800 125 1000 30 0 30000
110 IXTH76N25T SP0613 200 125 1000 30 0 30000
111 IXTH86N25T SP0638 200 125 1000 30 0 30000
112 IXTH8P50 SK0712 400 125 1000 30 0 30000
113 IXTK180N15P SP0552 120 125 1000 30 0 30000
114 IXTK34N80 SP0546 640 125 1000 30 0 30000
115 IXTK34N80 SP0603 640 125 1000 30 0 30000
116 IXTK34N80 SP0603 640 125 1000 30 0 30000
117 IXTP08N100P K625 800 125 1000 30 0 30000
118 IXTP08N120P K0709 960 125 1000 30 0 30000
119 IXTP14N60PM K631 480 125 1000 30 0 30000
120 IXTP14N60PM K643 480 125 1000 30 0 30000
IXYS Semiconductor GmbH 6
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
121 IXTP160N075T K0707 60 125 1000 30 0 30000
122 IXTP17N30T K648 240 125 1000 30 0 30000
123 IXTP18N60PM K631 480 125 1000 30 0 30000
124 IXTP1N100P K636 800 125 1000 30 0 30000
125 IXTP1R4N100P K636 800 125 1000 30 0 30000
126 IXTP1R4N120P K638 960 125 1000 30 0 30000
127 IXTP2R4N120P K636 960 125 1000 30 0 30000
128 IXTP32N20T K647 160 125 1000 30 0 30000
129 IXTP36N15T K648 120 125 1000 30 0 30000
130 IXTP36N25T K636 200 125 1000 30 0 30000
131 IXTP36N30T K641 240 125 1000 30 0 30000
132 IXTP44N25T K636 200 125 1000 30 0 30000
133 IXTP50N25T K738 200 125 1000 30 0 30000
134 IXTP56N15T K636 120 125 1000 30 0 30000
135 IXTP62N25T K648 200 125 1000 30 0 30000
136 IXTP74N15T K636 120 125 1000 30 0 30000
137 IXTP76N075T K640 60 125 1000 30 0 30000
138 IXTP76N075T K726 60 125 1000 30 0 30000
139 IXTP76N075T SS0728 60 125 1000 30 0 30000
140 IXTP8N50P K646 400 125 1000 30 0 30000
141 IXTP8N50P AK732 400 125 1000 30 0 30000
142 IXTP90N15T K647 120 125 1000 30 0 30000
143 IXTQ182N055T SK0612 44 125 1000 30 0 30000
144 IXTQ22N50P SS0633 400 125 1000 30 0 30000
145 IXTQ22N60P SK0539 480 125 1000 30 0 30000
146 IXTQ22N60P SK0604 480 125 1000 30 0 30000
147 IXTQ22N60P SK0609 480 125 1000 30 0 30000
148 IXTQ22N60P SK0608 480 125 1000 30 0 30000
149 IXTQ22N60P SK0608 480 125 1000 30 0 30000
150 IXTQ22N60P SK0609 480 125 1000 30 0 30000
151 IXTQ22N60P SK0609 480 125 1000 30 0 30000
152 IXTQ26N50P SK0604 400 125 1000 30 0 30000
153 IXTQ28N15P SK0653 120 125 1000 30 0 30000
154 IXTQ36P15P SK0652 120 125 1000 30 0 30000
155 IXTQ44N30T SK0629 240 125 1000 30 0 30000
156 IXTQ64N25P SK0535 200 125 1000 30 0 30000
157 IXTQ74N20P SK0515 160 125 1000 30 0 30000
158 IXTQ76N25T SK0613 200 125 1000 30 0 30000
159 IXTQ82N25T SK0603 200 125 1000 30 0 30000
160 IXTQ88N28T SK0545 224 125 1000 30 0 30000
161 IXTQ88N28T SK0641 224 125 1000 30 0 30000
162 IXTQ88N30P SK0605 240 125 1000 30 0 30000
163 IXTQ88N30T SK0638 240 125 1000 30 0 30000
164 IXTQ96N20P SS0631 160 125 1000 30 0 30000
165 IXTQ96N25T SK0648 200 125 1000 30 0 30000
166 IXTT88N30P SP0626 240 125 1000 30 0 30000
167 IXTV18N60PS SP0636 480 125 1000 30 0 30000
168 IXTV230N085TS SP0629 68 125 1000 30 0 30000
169 IXUC200N055 1594 44 125 1000 20 0 20000
IXYS Semiconductor GmbH 7
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 GWM160-0055P3 1524 240 150 168 6 0 1008
2MIAA20WD600TMH 1844 1120 125 1000 10 0 10000 Konverter tested
3MIAA20WD600TMH 1844 480 125 1000 10 0 10000 Inverter tested
4 MID145-12A3 2031 960 125 168 10 0 1680
5 MKI75-06A7T 1847 480 125 168 10 0 1680
6 MKI80-06T6K 1818 480 125 168 10 0 1680
7 MUBW36-12E7 1898 960 125 1000 10 0 10000
8 MUBW50-12T8 1777 960 125 1000 10 0 10000
9 MUBW75-17T8 2001 1540 125 1000 5 0 5000
10 MUBW75-17T8 2001 1360 125 1000 5 0 5000
11 MWI150-12T8T 1897 960 125 1000 10 0 10000
12 MWI30-06A7T 2069 480 125 168 10 0 1680
13 VMO60-05F 1552 400 125 168 10 0 1680
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 MCC132-16io1 1509 1120 125 1000 10 0 10000
2 MCC132-16io1 1980 1120 125 168 10 0 1680
3 MCC162-08io1 1624 800 126 168 20 0 3360
4 MCC162-16io1 1593 1120 125 168 10 0 1680
5 MCC21-16io8 1812 1120 125 168 10 0 1680
6 MCC26-16io1 1539 1120 125 168 10 0 1680
7 MCC310-16 1696 1120 125 168 10 0 1680
8 MCC312-16 2028 1120 125 1000 10 1 10000 I_R @ increased
9 MCC44-16io1 1747 1120 125 168 10 0 1680
10 MCC44-16io1 2006 1120 125 168 10 0 1680
11 MCC95-16io1 1701 1120 125 168 10 0 1680
12 MCC95-16io1 1862 1120 125 168 10 0 1680
13 MCD56-16io1 1587 1120 125 168 10 0 1680
14 MDD172-16n1 1554 1120 125 168 10 0 1680
15 MDD95-16 2032 1120 125 168 10 0 1680
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 MMO75-16io1 1727 1120 125 168 10 0 1680
2 MMO90-16 1710 1120 125 168 10 0 1680
3 VBO19-16DT1 2011 1120 125 168 10 0 1680
4 VBO19-16DTI 1584 1120 125 168 10 0 1680
5 VBO40-16NO6 1860 1120 125 168 10 0 1680
6 VHF36-16io5 1542 1120 125 168 10 0 1680
7 VHF36-16io5 1732 1120 125 168 10 0 1680
8 VUB72-16 1657 1120 125 168 10 0 1680
9 VUB72-16No1 2004 1120 125 168 10 0 1680
10 VUB72-16No1 2004 960 125 168 10 0 1680
11 VUB72-16No1 2004 960 125 168 10 0 1680
12 VUO190-18NO7 2026 1260 125 1000 10 0 10000
13 VUO25-16NO8 1581 1120 125 168 10 0 1680
14 VUO31-18 1863 1260 125 1000 10 0 10000
15 VUO34-18NO1 1861 1260 125 168 10 0 1680
16 VWO140-16 1684 1120 125 1000 10 0 10000
17 VY40-16io1 1745 1120 125 168 10 0 1680
IXYS Semiconductor GmbH 8
TABLE 1E: FRED
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 DHF30IM600PN 1508 480 125 1000 20 0 20000
2 DHF30IM600QB 1625 480 125 1000 20 0 20000
3 DHG10I1200PM 1682 960 125 1000 20 0 20000
4 DHG10I600PM 1685 480 125 1000 20 0 20000
5 DHG20C600QB 1711 480 125 1000 20 0 20000
6 DHG30I1200HA 1652 960 125 1000 20 0 20000
7 DHG30I1200HA 1734 960 125 1000 20 0 20000
8 DHG40C1200HB 1903 960 125 1000 20 0 20000
9 DHG40C600PB 2037 480 125 1000 20 0 20000
10 DHG60C600HB 1668 480 125 1000 20 0 20000
11 DPG15I400PM 1770 320 125 1000 20 0 20000
12 DPG20C200PN 1692 240 125 1000 20 0 20000
13 DPG20C400PN 1768 320 125 1000 20 0 20000
14 DPG30C300HB 1644 240 125 1000 20 0 20000
15 DPG30C300PB 1923 240 125 1000 20 0 20000
16 DPG60C200QB 1608 160 125 1000 20 0 20000
17 DPG60C300HB 1525 240 125 1000 20 0 20000
18 DPG60C300QB 1481 240 125 1000 20 0 20000
19 DPG60C400QB 1446 320 125 1000 20 0 20000
20 DPG60IM300PC 1643 240 125 1000 20 0 20000
21 DSEC60-02Aq 1929 160 125 168 20 0 3360
22 DSEI2x31-06C 1563 480 125 168 10 0 1680
23 DSEI2x61-12B 1607 960 125 168 10 0 1680
24 DSEP15-06A 2020 480 125 168 20 0 3360
25 DSEP29-03 1954 240 125 168 20 0 3360
26 DSEP29-06A 1736 480 125 168 20 0 3360
27 DSEP2x61-12A 1984 960 125 168 10 0 1680
28 DSEP30-06BR 1952 480 125 168 20 0 3360
29 DSEP30-12AR 1634 960 125 168 20 0 3360
30 DSEP60-03A 1537 240 125 168 20 0 3360
31 DSEP60-06A 1572 480 125 168 20 0 3360
32 DSEP75-06AR 1619 480 125 1000 20 0 20000
33 DSEP8-03AS 1738 240 125 1000 20 0 20000
34 MEO450-12 1826 960 125 186 6 0 1116
35 MEO500-06DA 1934 480 125 168 9 0 1512
TABLE 1F: Schottky Diode
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 DSA120C150QB 1507 150 125 1000 20 0 20000
2 DSA120C150QB 1907 150 125 1000 20 0 20000
3 DSA30C100HB 1981 100 125 1000 20 0 20000
4 DSA30C100PN 1906 100 125 1000 20 0 20000
5 DSA30C45HB 1714 45 125 1000 20 0 20000
6 DSA60C100PB 1781 100 125 1000 16 0 16000
7 DSA70C100HB 1782 100 125 1000 20 0 20000
8 DSA90C200HB 1674 200 125 1000 20 0 20000
9 DSB10I45PM 1942 45 100 1000 20 0 20000
10 DSB15IM45IB 1622 36 100 1000 20 0 20000
11 DSB30C30PB 1718 24 100 1000 20 0 20000
12 DSB30C45PB 1783 36 100 1000 20 0 20000
13 DSB30C60PB 1672 60 125 1000 20 0 20000
14 DSB40C15PB 1673 12 100 1000 20 0 20000
15 DSS10-0045B 2019 36 100 168 20 0 3360
16 DSS20-0015B 1871 12 100 1000 20 0 20000
17 DSS20-01AC 1709 100 125 1000 20 0 20000
18 DSS2x41-01A 1467 100 125 168 10 0 1680
19 DSS2x41-01A 2039 100 125 168 10 0 1680
20 DSS6-015AS 1723 150 150 1000 77 0 77000
21 DSS6-015AS 1838 150 150 1000 77 0 77000
22 DSSK38-0025B 1982 20 100 168 20 0 3360
23 DSSK60-015A 1600 150 125 168 20 0 3360
24 DSSK60-015AR 1857 150 125 168 20 0 3360
IXYS Semiconductor GmbH 9
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number or Volta
g
e Tem
p
. Time Sam
p
le Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 CS22-08io1M 2014 560 125 168 20 0 3360
2 CS30-16io1 1855 1120 125 168 20 0 3360
3 CS30-16io1DCSN 1920 1120 125 1000 20 1 20000 I_DRM increased
4 CS35-14 2008 980 125 168 10 0 1680
5 CS45-16io1 1808 1120 125 168 20 0 3360
6 CS60-16io1 1830 1120 125 1000 20 0 20000
7 CS8-12io2 1605 1280 125 168 10 0 1680
8 DSA1-16D 2023 1120 150 168 20 0 3360
9 DSAI75-16B 1858 1120 150 168 10 0 1680
10 DSDI60-16A 1569 1280 125 168 20 0 3360
11 DSP25-16 1564 1120 150 168 20 0 3360
12 DSP25-16 2016 1120 150 168 20 0 3360
TABLE 1H: ISOPLUS
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 CS45-16io1 1808 1120 125 168 20 0 3360
2 DSEP30-06BR 1952 480 125 168 20 0 3360
3 DSEP30-12AR 1634 960 125 168 20 0 3360
4 DSEP75-06AR 1619 480 125 1000 20 0 20000
5 DSS20-01AC 1709 100 125 1000 20 0 20000
6 GWM160-0055P3 1524 240 150 168 6 0 1008
7 IXEL40N400 1611 3000 125 168 10 0 1680
8 IXFL60N80P SP0605 640 125 1000 30 0 30000
9 IXFR12N100Q TP0703 800 125 1000 30 0 30000
10 IXFR14N100Q2 SP0732 800 125 1000 30 0 30000
11 IXFR26N100P SP0742 800 125 1000 30 0 30000
12 IXGR120N60C2 SP0722 480 125 1000 30 0 30000
13 IXGR48N60C3D1 SP0722 480 125 1000 30 0 30000
14 IXKC13N80C 1769 640 125 1000 20 0 20000
15 IXKC25N80C 1590 640 125 1000 20 0 20000
16 IXKR25N80C 1521 640 125 168 20 0 3360
17 IXTC110N25T SP0721 200 125 1000 30 0 30000
18 IXTC200N075T SP0627 60 125 1000 30 0 30000
19 IXUC200N055 1594 44 125 1000 20 0 20000
20 LKK47-06C5 1675 480 150 1000 20 1 20000 I_DSS increased
TABLE 1J: Breakover Diode
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IXBOD1-08 1941 640 125 168 20 0 3360
2 IXBOD1-09 1800 800 125 168 20 0 3360
3 IXBOD1-10 1576 800 125 168 20 0 3360
4 IXBOD1-10 2096 800 125 168 20 0 3360
IXYS Semiconductor GmbH 10
HTGB
(
Tables 2A .. 2C
)
TABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number or Volta
g
e Tem
p
. Time Sam
p
le Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 IXBH42N170 TK0734 16 125 1000 30 0 30000
2 IXDN75N120 1606 16 150 168 10 0 1680
3 IXEH25N120D1 1757 16 150 168 20 0 3360
4 IXEH40N120D1 1482 16 150 168 20 0 3360
5 IXER35N120D1 1950 16 150 168 20 0 3360
6 IXFA7N80P K533 16 125 1000 30 0 30000
7 IXFB100N50P SP0737 16 125 1000 30 0 30000
8 IXFB44N100P SP0721 16 125 1000 30 0 30000
9 IXFH12N120P TJ1041E 16 125 1000 30 0 30000
10 IXFH15N100P SK0636 16 125 1000 30 0 30000
11 IXFH20N100P SP0716 16 125 1000 30 0 30000
12 IXFH26N60Q SK0604 16 125 1000 30 0 30000
13 IXFK21N100Q SP0737 16 125 1000 30 0 30000
14 IXFK44N55Q SP0737 16 125 1000 30 0 30000
15 IXFL100N50P SP0549 16 125 1000 30 0 30000
16 IXFL60N80P SP0605 16 125 1000 30 0 30000
17 IXFL82N60P SP0550 16 125 1000 30 0 30000
18 IXFP12N50PM K550 16 125 1000 30 0 30000
19 IXFQ14N80P SK0709 16 125 1000 30 0 30000
20 IXFR12N100Q TP0703 16 125 1000 30 0 30000
21 IXFR14N100Q2 SP0732 16 125 1000 30 0 30000
22 IXFR26N100P TJ1159E 16 125 1000 30 0 30000
23 IXFX73N30Q SK0613 16 125 1000 30 0 30000
24 IXFX90N30 SK0613 16 125 1000 30 0 30000
25 IXGA42N30C3 K732 16 125 1000 30 0 30000
26 IXGA60N30C3 K732 16 125 1000 30 0 30000
27 IXGH100N30C3 SK0644 16 125 1000 30 0 30000
28 IXGH120N30C3 SK0638 16 125 1000 30 0 30000
29 IXGH1889 TP0736 16 125 1000 30 0 30000
30 IXGH20N170P K0716E1 20 125 1000 30 0 30000
31 IXGH28N60B3 SK0608 16 125 1000 30 0 30000
32 IXGH30N120B3 TP0606 16 125 1000 30 0 30000
33 IXGH48N60B3 SK0607 16 125 1000 30 0 30000
34 IXGH64N60B3 SK0608 16 125 1000 30 0 30000
35 IXGH72N60B3 SK0608 16 125 1000 30 0 30000
36 IXGH85N30C3 SK0644 16 125 1000 30 0 30000
37 IXGN200N60A2 SP0723 16 125 1000 30 0 30000
38 IXGP120N33TBM-A K723 16 125 1000 30 0 30000
39 IXGP24N120C3 K0652 16 125 1000 30 0 30000
40 IXGP50N33TC K0652 16 125 1000 30 0 30000
41 IXGP70N33TBM-A K726 16 125 1000 13 0 13000
42 IXGP90N33TBM-A K06251 16 125 1000 30 0 30000
43 IXGQ120N30TCD1 SK0631 16 125 1000 30 0 30000
44 IXGQ120N33TCD1 SK0639 16 125 1000 30 0 30000
45 IXGQ150N30TCD1 SK0631 16 125 1000 30 0 30000
46 IXGQ150N33TCD1 SK0639 16 125 1000 30 0 30000
47 IXGQ160N30PB SK0601 16 125 1000 30 0 30000
48 IXGQ160N30PB SK0601 16 125 1000 30 0 30000
49 IXGQ160N30PB SK0601 16 125 1000 30 0 30000
50 IXGQ180N30TCD1 SK0632 16 125 1000 30 0 30000
51 IXGQ180N33TB SK0711 16 125 1000 30 0 30000
52 IXGQ180N33TC SK0649 16 125 1000 30 0 30000
53 IXGQ180N33TCD1 SK0639 16 125 1000 30 0 30000
54 IXGQ200N30PB SK0631 16 125 1000 30 0 30000
55 IXGQ240N30PB SK0631 16 125 1000 30 0 30000
56 IXGQ70N33TB SK0650 16 125 1000 30 0 30000
57 IXGQ85N33PCD1 SK0613 16 125 1000 27 0 27000
58 IXGQ85N33PCD1 SK0638 16 125 1000 30 0 30000
59 IXGQ90N27PB SK0611 16 125 1000 30 0 30000
60 IXGQ90N27PB SK0640 16 125 1000 30 0 30000
IXYS Semiconductor GmbH 11
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
61 IXGQ90N30TCD1 SK0631 16 125 1000 30 0 30000
62 IXGQ90N33TB SK0651 16 125 1000 30 0 30000
63 IXGQ90N33TC SK0649 16 125 1000 30 0 30000
64 IXGQ90N33TCD1 SK0639 16 125 1000 30 0 30000
65 IXGQ90N33TCD1 SK0728 16 125 1000 20 0 20000
66 IXGQ90N33TCD4 SK0721 16 125 1000 30 0 30000
67 IXGR120N60C2 SP0722 16 125 1000 30 0 30000
68 IXGR40N60C2D1 SP0635 16 125 1000 30 0 30000
69 IXGR48N60C3D1 SP0722 16 125 1000 30 0 30000
70 IXGX72N60B3H1 SP0739 16 125 1000 30 0 30000
71 IXKH70N60C5 1926 16 150 168 20 0 3360
72 IXKP13N60C5M 1716 16 150 1000 20 0 20000
73 IXSH30N60B2D1 SP0506 16 125 1000 30 0 30000
74 IXSK40N60CD1 SK0722 16 125 1000 30 0 30000
75 IXTA36N30P SK0603 16 125 1000 30 0 30000
76 IXTA36N30P K0621 16 125 1000 30 0 30000
77 IXTA36N30P K640 16 125 1000 30 0 30000
78 IXTA50N25T SK0604 16 125 1000 30 0 30000
79 IXTA50N28T K545 16 125 1000 30 0 30000
80 IXTA50N28T K0606 16 125 1000 30 0 30000
81 IXTA50N28T K634 16 125 1000 30 0 30000
82 IXTA50N28T K640 16 125 1000 30 0 30000
83 IXTA60N20T SK0601 16 125 1000 30 0 30000
84 IXTA76N25T K0704 16 125 1000 30 0 30000
85 IXTC110N25T SP0721 16 125 1000 30 0 30000
86 IXTC200N075T SP0627 16 125 1000 30 0 30000
87 IXTH130N20T SP0721 16 125 1000 30 0 30000
88 IXTH150N17T SK0718 16 125 1000 30 0 30000
89 IXTH160N15T SK0721 16 125 1000 30 0 30000
90 IXTH1N250 TP0638 16 125 1000 30 0 30000
91 IXTH30N50L TK0738 16 125 1000 30 0 30000
92 IXTH76N25T SP0613 16 125 1000 30 0 30000
93 IXTH86N25T SP0638 16 125 1000 30 0 30000
94 IXTH8P50 SK0712 16 125 1000 30 0 30000
95 IXTK180N15P SP0552 16 125 1000 30 0 30000
96 IXTN79N20 2052 16 150 168 20 0 3360
97 IXTP08N100P K625 16 125 1000 30 0 30000
98 IXTP08N120P K0709 16 125 1000 30 0 30000
99 IXTP14N60PM K631 16 125 1000 30 0 30000
100 IXTP14N60PM K643 16 125 1000 30 0 30000
101 IXTP160N075T K0707 16 125 1000 30 0 30000
102 IXTP17N30T K648 16 125 1000 30 0 30000
103 IXTP18N60PM K631 16 125 1000 30 0 30000
104 IXTP1R4N120P K638 16 125 1000 30 0 30000
105 IXTP2R4N120P K636 16 125 1000 30 0 30000
106 IXTP32N20T K647 16 125 1000 30 0 30000
107 IXTP36N15T K648 16 125 1000 30 0 30000
108 IXTP36N25T K636 16 125 1000 30 0 30000
109 IXTP36N30T K641 16 125 1000 30 0 30000
110 IXTP44N25T K636 16 125 1000 30 0 30000
111 IXTP50N25T K738 16 125 1000 30 0 30000
112 IXTP56N15T K636 16 125 1000 30 0 30000
113 IXTP62N25T K648 16 125 1000 30 0 30000
114 IXTP74N15T K636 16 125 1000 30 0 30000
115 IXTP76N075T K640 16 125 1000 30 0 30000
116 IXTP76N075T K726 16 125 1000 30 0 30000
117 IXTP76N075T SS0728 16 125 1000 30 0 30000
118 IXTP8N50P K646 16 125 1000 30 0 30000
119 IXTP8N50P AK732 16 125 1000 30 0 30000
120 IXTP90N15T K647 16 125 1000 30 0 30000
IXYS Semiconductor GmbH 12
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
121 IXTQ182N055T SK0612 16 125 1000 30 0 30000
122 IXTQ182N055T SK0612 16 150 500 30 0 15000
123 IXTQ22N50P SS0633 16 125 1000 30 0 30000
124 IXTQ22N60P SK0604 16 125 1000 30 0 30000
125 IXTQ26N50P SK0604 16 125 1000 30 0 30000
126 IXTQ28N15P SK0653 16 125 1000 30 0 30000
127 IXTQ36P15P SK0652 16 125 1000 30 0 30000
128 IXTQ76N25T SK0613 16 125 1000 30 0 30000
129 IXTQ82N25T SK0514 16 125 1000 30 0 30000
130 IXTQ82N25T SK0603 16 125 1000 30 0 30000
131 IXTQ88N28T SK0641 16 125 1000 30 0 30000
132 IXTQ88N30P SK0605 16 125 1000 30 0 30000
133 IXTQ88N30T SK0638 16 125 1000 30 0 30000
134 IXTQ96N20P SS0631 16 125 1000 30 0 30000
135 IXTQ96N25T SK0648 16 125 1000 30 0 30000
136 IXTT88N30P SP0626 16 125 1000 30 0 30000
137 IXTV18N60PS SP0636 16 125 1000 30 0 30000
138 IXTV230N085TS SP0629 16 125 1000 30 0 30000
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1 GWM100-01X1SL 1965 16 150 168 10 0 1680
2GWM120-0075P3SL 1720 16 150 1000 80 0 80000
3 MDI300-12A4 1555 16 125 126 10 0 1260
4 MDI75-12 1931 16 125 168 10 0 1680
5MIAA20WD600TMH 1844 16 125 1000 10 0 10000
6 MII300-12A4 2012 16 125 168 10 0 1680
7 MII400-12E4 1741 16 125 168 10 0 1680
8 MII75-12A3 1541 16 125 168 10 0 1680
9MIXA15WB1200TED 1992 16 125 1000 5 0 5000
10 MIXA35WB1200TED 1991 16 125 1000 5 0 5000
11 MUBW15-12A6K 1553 16 125 168 10 0 1680
12 MUBW50-12E8 1469 16 125 168 10 0 1680
13 MWI30-06A7T 1635 16 125 168 10 0 1680
14 MWI30-06A7T 2069 16 125 168 10 0 1680
15 VII130-06P1 2025 16 125 168 10 0 1680
TABLE 2C: ISOPLUS
Date Code
# Part Number or Voltage Temp. Time Sample Failures Device Hours Remark
Test # [V] [°C] [hrs] Size [hrs]
1GWM100-01X1SL 1965 16 150 168 10 0 1680
2GWM120-0075P3SL 1720 16 150 1000 80 0 80000
3 IXER35N120D1 1950 16 150 168 20 0 3360
4 IXER35N120D1 1950 16 150 168 20 0 3360
5 IXFL100N50P SP0549 16 125 1000 30 0 30000
6 IXFL60N80P SP0605 16 125 1000 30 0 30000
7 IXFL82N60P SP0550 16 125 1000 30 0 30000
8 IXFR12N100Q TP0703 16 125 1000 30 0 30000
9 IXFR14N100Q2 SP0732 16 125 1000 30 0 30000
10 IXFR26N100P TJ1159E 16 125 1000 30 0 30000
11 IXGR120N60C2 SP0722 16 125 1000 30 0 30000
12 IXGR40N60C2D1 SP0635 16 125 1000 30 0 30000
13 IXGR48N60C3D1 SP0722 16 125 1000 30 0 30000
14 IXTC110N25T SP0721 16 125 1000 30 0 30000
15 IXTC200N075T SP0627 16 125 1000 30 0 30000
IXYS Semiconductor GmbH 13
POWER CYCLE (Tables 3A ..3H)
TABLE 3A: MOSFET/IGBT single device
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 IXBH9N160G 1759 125 80 2000 20 0 40000
2 IXDH30N120D1 1940 125 80 2000 20 0 40000
3 IXFN82N60P SP0551 - 100 10000 24 0 240000
4 IXFX73N30Q SK0613 - 100 10000 24 0 240000
5 IXFX90N30 SK0613 - 100 10000 24 0 240000
6 IXGQ85N33PCD1 SK0614 - 100 10000 24 0 240000
7 IXGQ90N27PB SK0611 - 100 10000 24 0 240000
8 IXKH20N60C5 1987 125 80 2000 20 0 40000
9 IXKP13N60C5M 1716 125 80 10000 20 0 200000
10 IXSH30N60B2D1 SP0506 - 100 10000 24 0 240000
11 IXTP14N60PM K643 - 50 10000 24 0 240000
12 IXTP18N60PM K631 - 50 10000 24 0 240000
13 IXTQ26N50P SK0604 - 100 10000 24 0 240000
14 IXTQ76N25T SK0613 - 100 10000 24 0 240000
15 IXTQ96N20P SS0631 - 100 10000 24 0 240000
TABLE 3B: MOSFET/IGBT Module
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 GWM160-0055X1-S
L
1960 150 100 3000 80 0 240000
2 MIAA20WD600TMH 1844 125 80 10000 9 0 90000
3 MKI75-06A7 1464 125 80 10000 10 0 100000
4 MKI75-06A7T 1676 125 80 10000 10 0 100000
5 MKI75-06A7T 1772 125 80 5000 10 0 50000
6 MKI75-06A7T 1776 125 80 10000 10 0 100000
7 MUBW20-06A7 1735 125 80 7130 10 0 71300
TABLE 3C: Thyristor/Diode Module
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 MCC162-12io1 2056 125 80 10000 10 0 100000
2 MCC56-14io1 1472 125 80 20000 10 0 200000
3 MCD40-16io6 1474 125 80 5000 10 0 50000
4 MDD95 1875 125 80 30000 10 0 300000
5 MDD95-18N1 1971 125 80 20000 10 0 200000
TABLE 3D: Controller, Rectifier Bridge
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 VBO19-16DT1 2011 125 80 5000 10 0 50000
2 VBO40-16NO6 1860 125 80 5000 10 0 50000
3 VUO121-16NO1 2071 125 80 20000 10 0 200000
4 VUO190-18NO7 2026 125 80 2000 10 0 20000
5 VUO80-16 1456 125 80 5000 10 0 50000
IXYS Semiconductor GmbH 14
TABLE 3E: FRED
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 DH60-18A 1699 125 80 2000 20 0 40000
2 DSEC30-02A 1755 125 80 2000 20 0 40000
3 DSEI120-12A 1928 145 100 2000 20 0 40000
4 DSEI60-02A 1440 145 105 2000 20 0 40000
5 DSEI60-12A 1599 150 105 2000 20 0 40000
6 DSEP12-12A 1955 145 100 2000 20 0 40000
7 DSEP15-12CR 1930 125 80 2000 20 0 40000
8 DSEP29-06A 1736 150 105 2000 20 0 40000
9 DSEP2x61-06A 1633 125 80 5000 10 0 50000
10 DSEP60-12A 2021 145 100 2000 20 0 40000
TABLE 3F: Schottky Diode
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 DSS16-0045A 2018 145 100 2000 20 0 80000
2 DSS2x160-01A 1856 125 80 4000 10 0 40000
3 DSS6-015AS 1723 140 100 8572 77 0 660044
4 DSS6-015AS 1838 140 100 8572 77 0 660044
5 DSSk60-0045A 1873 150 105 2000 20 0 40000
6 DSSK80-006B 1575 125 80 2000 20 0 40000
TABLE 3G: Thyristor/Diode single device
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 CS30-16io1 2009 125 80 2000 20 0 40000
2 CS35-14 2008 125 80 2000 10 0 20000
3 CS35-14io4 1473 125 80 2000 10 0 20000
4 CS45-12io1 1601 125 80 5000 20 0 100000
5 CS8-12io2 1605 125 80 2000 10 0 20000
6 DSA1-18D 1435 150 105 2000 20 0 40000
7 DSA15IM45IB 1621 125 80 4000 20 0 80000
8 DSA75-16B 1859 150 105 2000 10 0 20000
9 DSI45-08A 1760 150 105 2000 20 0 40000
TABLE 3H: ISOPLUS
Date Code Number
# Part Number or Tj(max) ΔΤ of Sample Failures Device Cycles Remark
Test # [°C] [K] Cycles Size
1 DSEP15-12CR 1930 125 80 2000 20 0 40000
2 GWM160-0055X1 1960 150 100 3000 80 0 240000
IXYS Semiconductor GmbH 15
TEMPERATURE CYCLE
(
Tables 4A ..4J
)
TABLE 4A: MOSFET/IGBT single device
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 FII50-12EL 1534 -55 150 100 20 0 2000
2 IXBH9N160G 1574 -55 150 50 20 0 1000
3 IXDD404SI 1913 -55 150 1000 83 0 83000
4 IXDD404SIA 1695 -55 150 500 30 0 15000
5 IXDN75N120 1606 -40 150 20 10 0 200
6 IXKC13N80C 1769 -55 150 100 20 0 2000
7 IXKC25N80C 1590 -55 150 100 20 0 2000
8 IXKH20N60C5 2013 -40 150 50 20 0 1000
9 IXKH70N60C5 1926 -40 150 50 20 0 1000
10 IXKP10N60C5M 1693 -40 150 100 20 0 2000
11 IXKP13N60C5M 1716 -55 150 100 20 0 2000
12 IXKT70N60C5 2068 -55 150 1000 20 0 20000
13 IXUC200N055 1802 -55 150 90 50 0 4500
TABLE 4B: MOSFET/IGBT Module
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 MDI300-12A4 1555 -40 150 50 10 0 500
2 MIAA20WD600TMH 1844 -40 150 100 9 0 900
3 MII400-12E4 1741 -40 150 50 10 0 500
4 MII75-12A3 1541 -40 150 50 10 0 500
5 MIXA15WB1200TED 1992 -40 150 100 10 0 1000
6 MKI75-06A7T 1562 -40 150 50 10 0 500
7 MKI75-06A7T 1724 -40 150 50 10 0 500
8 MKI75-06A7T 1724 -40 150 50 10 0 500
9 MKI80-06T6K 1818 -40 150 100 10 0 1000
10 MUBW15-12A7 1466 -40 150 50 10 0 500
11 MUBW25-12T7 1896 -40 150 100 10 0 1000
12 MUBW75-12T8 1731 -40 150 100 10 0 1000
IXYS Semiconductor GmbH 16
TABLE 4C: Thyristor/Diode Module
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 MCC162-14 1816 -40 150 50 10 0 500
2 MCC162-14io1 1544 -40 150 50 10 0 500
3 MCC162-14io1 1629 -40 150 50 10 0 500
4 MCC200-14 1717 -40 150 50 10 0 500
5 MCC21-16 1821 -40 150 100 20 0 2000
6 MCC26-14 2035 -40 150 50 10 0 500
7 MCC26-14io1 1641 -40 150 50 10 0 500
8 MCC310-12io1 1545 -40 150 50 10 0 500
9 MCC310-14io1 1627 -40 150 50 10 0 500
10 MCC44-12io1 1540 -40 150 50 10 0 500
11 MCC44-16io1 2048 -40 150 100 10 0 1000
12 MCC44-16io8 1864 -40 150 100 10 0 1000
13 MCC56-12io1 1449 -40 150 50 10 0 500
14 MCC72-14io1 2007 -40 150 50 10 0 500
15 MCC95-14io1 1788 -40 150 150 10 0 1500
16 MCD162-16io1 1884 -40 150 50 10 0 500
17 MCD200-14 2010 -40 150 50 10 0 500
18 MCD250/16 2059 -40 150 50 10 0 500
19 MCD56-16io1 1646 -40 150 50 10 0 500
20 MCO600-16io1 1680 -40 150 50 10 0 500
21 MDD26-18N1 1749 -40 150 100 20 1 2000 V_F increased
22 MDD56-16io1 1865 -40 150 50 10 0 500
23 MDD56-18N1 2080 -40 150 50 10 0 500
24 MDD95-22 1875 -40 150 100 10 1 1000 V_F increased
25 MDD95-16 1585 -40 150 50 10 0 500
26 MDD95-18N1 1971 -40 150 100 10 0 1000
27 MDI300-12A4 1555 -40 150 50 10 0 500
TABLE 4D: Controller, Rectifier Bridge
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 MMO230-16 1543 -40 150 150 10 0 1500
2 MMO230-16iO7 1868 -40 150 50 20 0 1000
3 MMO74-12io6 1615 -55 150 300 10 0 3000
4 VBO19-16DT1 1648 -40 150 50 10 0 500
5 VBO25-12nO2 1726 -40 150 50 10 0 500
6 VBO25-12NO2 2005 -40 150 50 10 0 500
7 VBO40-16NO6 1860 -40 150 50 10 0 500
8 VBO40-16NO6 1860 -40 150 20 10 0 200
9 VUB120-16 2034 -40 150 50 10 0 500
10 VUB120-16NO2 1636 -40 150 50 10 0 500
11 VUB72-16No1 1894 -40 150 50 10 0 500
12 VUO36-12NO8 2024 -40 150 50 10 0 500
13 VUO36-16 2036 -40 150 150 10 0 1500
14 VUO36-16nO8 1580 -40 150 10 10 0 100
15 VUO80-16 1778 -40 150 100 10 0 1000
16 VUO82-16NO7 2085 -40 150 10 10 0 100
17 VVY40-16io1 1679 -40 150 50 10 0 500
18 VVZ40-14 1691 -40 150 100 10 0 1000
19 VW2x60-14 1443 -40 150 50 10 0 500
20 VWO85-12 1570 -40 125 50 10 0 500
IXYS Semiconductor GmbH 17
TABLE 4E: FRED
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 DH60-18A 1568 -40 150 50 20 0 1000
2 DHG10I600PM 1685 -55 150 100 20 0 2000
3 DHH55-36N1F 1604 -55 150 100 40 0 4000
4 DPG15I400PM 1770 -55 150 100 20 0 2000
5 DPG60C300QB 1909 -55 150 100 20 0 2000
6 DSEE29-06CC 1771 -55 150 100 20 0 2000
7 DSEI120-12A 1538 -40 150 50 20 0 1000
8 DSEI120-12A 1756 -40 150 50 20 0 1000
9 DSEI2x121-02A 2042 -40 150 20 10 0 200
10 DSEI2x31-06C 1563 -40 150 20 10 0 200
11 DSEI60-06A 1804 -40 150 50 20 0 1000
12 DSEP15-06A 2020 -55 150 50 20 0 1000
13 DSEP15-12CR 1514 -55 150 50 20 0 1000
14 DSEP25-16AR 1712 -40 150 50 20 0 1000
15 DSEP2x25-12C 1468 -40 150 50 10 0 500
16 DSEP30-06BR 1700 -55 150 50 20 0 1000
17 DSEP30-06CR 2015 -55 150 50 20 0 1000
18 DSEP8-03AS 1738 -40 150 100 20 0 2000
19 DSEP8-12A 1438 -55 150 50 20 0 1000
20 DSEP8-12A 1956 -55 150 50 20 0 1000
21 DSEP9-06CR 1437 -55 150 50 20 0 1000
22 MEE250-12I 1887 -40 150 50 10 0 500
23 MEE300-06DA 2064 -40 150 100 10 0 1000
24 MEK300-06 1737 -40 150 50 10 0 500
25 MEO450-12DA 2000 -40 150 100 10 0 1000
TABLE 4F: Schottky Diode
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 DSA120C150QB 1907 -55 150 100 20 0 2000
2 DSA30C100PN 1906 -55 150 100 20 0 2000
3 DSA90C200HB 1674 -55 150 100 20 0 2000
4 DSB15IM45IB 1622 -55 150 100 20 0 2000
5 DSS16-0045A 2018 -55 150 50 20 0 1000
6 DSS20-01AC 1709 -55 150 100 20 0 2000
7 DSS2x160-01A 1856 -40 150 100 10 0 1000
8 DSS2x61-01A 1985 -40 150 50 10 0 500
9 DSS31-0045A 1596 -55 150 1000 80 0 80000
10 DSS31-0045A 1596 -55 150 1000 80 0 80000
11 DSS31-0045A SN 1492 -55 150 500 77 0 38500
12 DSS6-015AS 1723 -55 150 1000 77 0 77000
13 DSSK30-01A 1807 -55 150 50 20 0 1000
14 DSSK38-0025B 1982 -55 150 50 20 0 1000
15 DSSK40-0015B 1557 -55 150 50 20 0 1000
16 DSSK60-0045B 1457 -55 150 50 20 0 1000
17 DSSK60-015AR 1591 -55 150 200 40 0 8000
18 DSSK60-015AR 1573 -55 150 50 20 0 1000
19 DSSK80-006B 1575 -55 150 50 20 0 1000
IXYS Semiconductor GmbH 18
TABLE 4G: Thyristor/Diode single device
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 CS20-22-moF1 1888 -55 150 50 30 0 1500
2 CS22-08io1M 1953 -40 150 50 20 0 1000
3 CS23-12io2 1959 -40 150 20 20 0 400
4 CS30-12io1 1977 -40 150 50 20 0 1000
5 CS30-16io1DCSN 1820 -40 150 100 20 0 2000
6 CS35-14io4 1473 -40 150 20 10 0 200
7 CS45-16io1 1598 -40 150 50 20 0 1000
8 CS60-16io1 1830 -40 150 100 20 0 2000
9 CS8-12io2 1605 -40 150 20 10 0 200
10 DSA1-16D 2023 -40 150 50 20 0 1000
11 DSA17-16A 1703 -40 150 20 20 0 400
12 DSA35-16A 1566 -40 150 20 10 0 200
13 DSAI35-16A 2067 -40 150 20 10 0 200
14 DSAI75-16B 1858 -40 150 20 10 0 200
15 DSI45-12A 1805 -40 150 50 20 0 1000
16 DSP25-16 1564 -40 150 50 20 0 1000
17 DSP25-16A 1639 -40 150 50 20 0 1000
TABLE 4H: ISOPLUS
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 CS20-22-moF1 1888 -55 150 50 30 0 1500
2 DHH55-36N1F 1604 -55 150 100 40 0 4000
3 DSEE29-06CC 1771 -55 150 100 20 0 2000
4 DSEP15-12CR 1514 -55 150 50 20 0 1000
5 DSEP25-16AR 1712 -40 150 50 20 0 1000
6 DSEP30-06BR 1700 -55 150 50 20 0 1000
7 DSEP30-06CR 2015 -55 150 50 20 0 1000
8 DSEP9-06CR 1437 -55 150 50 20 0 1000
9 DSS20-01AC 1709 -55 150 100 20 0 2000
10 DSSK60-015AR 1573 -55 150 50 20 0 1000
11 DWP25-16/18AL 1842 -55 150 100 22 0 2200
12 FII50-12EL 1534 -55 150 100 20 0 2000
13 GWM120-0075P3SL 1720 -55 150 1000 80 0 80000
14 GWM160-0055X1-S
L
1960 -55 150 1000 80 0 80000
15 GWM70-01P2 1448 -55 150 1000 10 0 10000
16 IXKC13N80C 1769 -55 150 100 20 0 2000
17 IXKC25N80C 1590 -55 150 100 20 0 2000
18 IXUC200N055 1802 -55 150 90 50 0 4500
TABLE 4J: Breakover Diode
Date Code Low High Number
# Part Number or Temp. Temp. of Sample Failures Device Cycles Remark
Test # [°C] [°C] Cycles Size
1 IXBOD1-08 1941 -40 150 50 20 0 1000
2 IXBOD1-09 1800 -40 150 50 20 0 1000
3 IXBOD1-10 1576 -40 150 50 20 0 1000
4 IXBOD1-10 2096 -40 150 50 20 0 1000
IXYS Semiconductor GmbH 19
HUMIDITY TEST
(
Tables 5A
,
5H..5J
)
TABLE 5A: MOSFET/IGBT single device
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1 IXDD404SIA 1695 121 100 96 30 0 2880
2 IXKH24N60C5 2066 121 100 48 20 0 960
3 IXKP13N60C5M 1716 85 85 1000 20 0 20000
4 IXKP13N60C5M 1687 121 100 96 10 0 960
TABLE 5E: FRED
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1 DPG20C300PN 1908 121 100 96 20 0 1920
2 DPG60C400QB 1446 121 100 96 8 0 768
3 DSEI2x61-12B 1607 121 100 96 20 0 1920
4 DSEI8-06AS 1535 121 100 48 20 0 960
5 DSEP30-06BR 1536 121 100 48 20 0 960
6 DSEP30-12CR 1927 121 100 48 20 0 960
7 DSEP8-03AS 1837 121 100 96 20 0 1920
8 MEO450-12DA 1742 85 85 168 10 0 1680
TABLE 5F: Schottky Diode
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1 DSA120C150QB 1907 121 100 96 20 0 1920
2 DSA20C100PB 1835 85 85 1000 20 0 20000
3 DSA20C100PB 1835 121 100 96 20 0 1920
4 DSA20C60PN 1974 121 100 96 20 0 1920
5 DSA90C200HB 1836 85 85 1000 20 0 20000
6 DSA90C200HB 1836 121 100 96 20 1 1920 I_R increased
7 DSB15IM45IB 1622 121 100 96 20 0 1920
8 DSS31-0045A SN 1492 121 100 96 77 0 7392
9 DSS6-015AS 1723 121 100 96 77 0 7392
TABLE 5G: Thyristor/Diode single device
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1 CS45-12io1 1754 121 100 48 20 0 960
2 DSDI60-14A 1806 121 100 48 20 0 960
3 DSI45-16A 1976 121 100 96 20 0 1920
TABLE 5H: ISOPLUS
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1 DSEP30-06BR 1536 121 100 48 20 0 960
2 DSEP30-12CR 1927 121 100 48 20 0 960
TABLE 5J: Breakover diode
Date Code
# Part Number or Temp. Rel. H. Time Sample Failures Device Hours Remark
Test # [°C] [%] [hrs] Size [hrs]
1IXBOD1-08 1941 121 100 48 20 0 960
2 IXBOD1-09 1800 121 100 48 20 0 960
3 IXBOD1-10 1576 121 100 48 20 0 960
4 IXBOD1-10 2096 121 100 48 20 0 960
IXYS Semiconductor GmbH 20
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