EGP50A thru EGP50G Datasheet by Vishay Semiconductor Diodes Division

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EGP50A thru EGP50G
Vishay General Semiconductor
Document Number: 88585
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case: GP20, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 5.0 A
VRRM 50 V to 400 V
IFSM 150 A
trr 50 ns
VF0.95 V, 1.25 V
TJ max. 150 °C
Patented*
®
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
GP20
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TL = 55 °C IF(AV) 5 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 150 A
Operating and storage temperature range TJ, TSTG - 65 to + 150 °C
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EGP50A thru EGP50G
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88585
Revision: 20-Aug-07
2
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Maximum instantaneous
forward voltage 5.0 A VF 0.95 1.25 V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
TA = 125 °C IR 5.0
50 μA
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 50 ns
Typical junction capacitance 4.0 V, 1 MHz CJ 95 75 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G UNIT
Typical thermal resistance (1) RTJA
RTJL
20
5.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP50G-E3/54 1.01 54 1400 13" diameter paper tape and reel
EGP50G-E3/73 1.01 73 1000 Ammo pack packaging
EGP50GHE3/54 (1) 1.01 54 1400 13" diameter paper tape and reel
EGP50GHE3/73 (1) 1.01 73 1000 Ammo pack packaging
Figure 1. Maximum Forward Current Derating Curve
6.0
025 50 75 100 125 150 175
0
1.0
2.0
3.0
4.0
5.0
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
Copper Heatsinks
TL
L
0.375" (9.5 mm)
Lead Length
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
175
110 100
0
25
50
75
100
125
150
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
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EGP50A thru EGP50G
Vishay General Semiconductor
Document Number: 88585
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1
10
100
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
EGP50A - EGP50D
EGP50F & EGP50G
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80 100
0.001
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.1 110 100 1000
0
30
60
90
120
150
180
210
EGP50A - EGP50D
EGP50F & EGP50G
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
GP20
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.042 (1.07)
0.037 (0.94)
DIA.
— VISHAY. V
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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Vishay
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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