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DATA SHEET
Product specification
Supersedes data of 2001 Oct 10 2004 Oct 11
DISCRETE SEMICONDUCTORS
BC636; BC638; BC640
PNP medium power transistors
b
ook, halfpage
M3D186
2004 Oct 11 2
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
FEATURES
•High current (max. 1 A)
•Low voltage (max. 80 V).
APPLICATIONS
•Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NPN complements: BC635, BC637 and BC639.
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM285
2
1
3
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BC636 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
BC638
BC640
2004 Oct 11 3
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC636 −−45 V
BC638 −−60 V
BC640 −−100 V
VCEO collector-emitter voltage open base
BC636 −−45 V
BC638 −−60 V
BC640 −−80 V
VEBO emitter-base voltage open collector −−5V
ICcollector current (DC) −−1A
ICM peak collector current −−1.5 A
IBM peak base current −−200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −0.83 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 150 K/W
2004 Oct 11 4
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current VCB =−30 V; IE=0 A −−100 nA
VCB =−30 V; IE= 0 A; Tj= 150 °C−−10 µA
IEBO emitter-base cut-off current VEB =−5 V; IC=0 A −−100 nA
hFE DC current gain VCE =−2 V; see Fig.2
IC=−5mA 63 −
IC=−150 mA 63 250
IC=−500 mA 40 −
DC current gain VCE =−2 V; IC=−150 mA; see Fig.2
BC636-10 63 160
BC636-16; BC638-16; BC640-16 100 250
VCEsat collector-emitter saturation voltage IC=−500 mA; IB=−50 mA −−0.5 V
VBE base-emitter voltage VCE =−2 V; IC=−500 mA −−1V
fTtransition frequency VCE =−5V;I
C=−50 mA; f = 100 MHz 100 −MHz
DC current gain ratio of the
complementary pairs
VCE=2V;IC= 150 mA −1.6
hFE1
hFE2
-----------
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
160
80
120
40
MBH730
−10−1
hFE
−1IC (mA)
−10 −103−104
−102
VCE = −2 V
a
SQW
2004 Oct 11 5
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 97-02-28
04-06-28
A L
0 2.5 5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1
e
1
2
3
2004 Oct 11 6
Philips Semiconductors Product specification
PNP medium power transistors BC636; BC638; BC640
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
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© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R75/05/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13575