IXGN200N60B3 Datasheet by IXYS

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© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 300 A
IC110 TC= 110°C 200 A
ILRMS Terminal Current Limit 200 A
ICM TC= 25°C, 1ms 1200 A
SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 300 A
(RBSOA) Clamped Inductive Load VCE ≤ VCES
PCTC= 25°C 830 W
TJ - 55 ... +150 °C
TJM 150 °C
Tstg - 55 ... +150 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in.
Weight 30 g
Features
zInternational Standard Package
miniBLOC
zUL Recognized
zAluminium Nitride Isolation
- High Power Dissipation
zIsolation Voltage 3000 V~
zVery High Current IGBT
zLow VCE(sat) for Minimum on-state
Conduction Losses
zMOS Gate Turn-On
- Drive Simplicity
zLow Collector-to-Case Capacitance
(< 50 pF)
zLow Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
•Switch-Mode and Resonant-Mode
Power Supplies
•Uninterruptible Power Supplies (UPS)
•DC Choppers
•AC Motor Speed Drives
•DC Servo and Robot Drives
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 5 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 1.35 1.50 V
IC= 200A, 1.65 V
TJ = 125°C 1.75 V
DS99941B(8/09)
GenX3TM 600V IGBT IXGN200N60B3 VCES = 600V
IC110 = 200A
VCE(sat) ≤≤
≤≤
≤ 1.50V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
Medium-Speed Low-Vsat PT
IGBT for 5-40kHz Switching
310 183 29 2.4 430 300 4.2 an INE E: MILL] ETERS W MIN MIN MAX A ' aw ' E c camzonozgrxgxnnm
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N60B3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC= 60A, VCE = 10 V, Note 1 95 160 S
Cies 26 nF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1260 pF
Cres 97 pF
Qg(on) 750 nC
Qge IC = 100V, VGE = 15 V, VCE = 0.5 • VCES 115 nC
Qgc 245 nC
td(on) 44 ns
tri 83 ns
Eon 1.6 mJ
td(off) 310 450 ns
tfi 183 300 ns
Eoff 2.9 4.5 mJ
td(on) 42 ns
tri 80 ns
Eon 2.4 mJ
td(off) 430 ns
tfi 300 ns
Eoff 4.2 mJ
RthJC 0.15 °C/W
RthCK 0.05 °C/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 300V, RG = 1Ω
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
SOT-227B miniBLOC
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 300V, RG = 1Ω
vCE = 15v 13v m w av $12K: g N < gen="" au="" 5v="" u="" 00="" a2="" 04="" 06="" 0:!="" m="" 12="" 14="" m="" ‘9="" 20="" vee="" a="" vo‘ts="" vce="" ,="" vans="" 6="" 7="" x="" 9="" m="" vgev="" vans="" h="" 12="" vcersaw="" normahzed=""><20 ©="" 2009="" vas="" cohporat‘on,="" ah="" nghls="" reserved="">
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN200N60B3
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
40
80
120
160
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
11V
9V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
0123456789
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
9V
5V
6V
7V
Fig. 3. Output Characteristics
@ T
J
=125ºC
0
40
80
120
160
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 200A
I
C
= 150A
I
C
= 100A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.0
1.4
1.8
2.2
2.6
3.0
3.4
56789101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 200
A
150
A
100
A
T
J
= 25ºC
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
240 200 120 3‘ Swemens 9 so 40 1 one 20 40 so an mo 120 \c , Amperes 14 12 m VGE A Van: 140 150 mu 2m 0 350 3m In - Amperes mo so ma Fig.11ellhximum Transient Therm omu Znnuc -°C /W / / Dom comm com a m Pu‘se Wwdm » Seconds va5 Reserves the ngm to Change mes, Test Commons, and Dxmensxons.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N60B3
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 100A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
45 AD 335 3 w _ ED“... 53“ E0" . n=125'c ch=15V g VCE 3ro m 2n <5 eofl-="" m="" homes="" 160="" 140="" 120="" 330="" 320="" h="" ‘="" -="" nanoseconds="" 5‘="" 2="" s="" s="" 2m="" 2w="" 230="" 350="" 320="" in="" -="" nanoseconds="" s="" 150=""><20 ©="" 2009="" ixvs="" cohporat‘on,="" ah="" nghls="" reserved="">
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN200N60B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
12345678910
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
120
160
200
240
280
320
360
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
280
320
360
400
440
480
520
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1, V
GE
= 15V
V
CE
= 300V
I
C
= 50A, 100A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
230
240
250
260
270
280
290
300
310
320
330
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
300
400
500
600
700
800
900
1000
1100
1200
1300
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
VGE
= 15V
VCE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
,
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
120
140
160
180
200
220
240
260
280
300
320
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
300
320
340
360
380
400
420
440
460
480
500
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
130 7 777777 an 7 2110 A § 7n 8 / V 3 8 9a ‘ §sn 7 z 2 _ , : 5D 4D 30 am so v Nanosemnds w _ 30 25 va5 Reserves the ngm to Change mens, Test Commons, and Dxmensms.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N60B3
IXYS REF: G_200N60B3(97)3-28-08-A
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
30
40
50
60
70
80
90
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
36
38
40
42
44
46
48
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
RG = 1 , VGE = 15V
VCE = 300V
TJ = 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
36
38
40
42
44
46
48
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
RG = 1 , VGE = 15V
VCE = 300V
I C = 50A
I C = 100A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
30
50
70
90
110
130
150
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
20
40
60
80
100
120
140
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
TJ = 125ºC, VGE = 15V
VCE = 300V
I C = 100A
I C = 50A
IXYS A Lillelluse Tecnnumgy
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