PTF141501E Datasheet by Infineon Technologies

View All Related Products | Download PDF Datasheet
infineon Jfifififikt 41% DAB Drive-up at 25 Volts vDD : 25 wasoo MHZ.|DO:1.5A. DAB mode 2 35 720 so '25 A ’3 5 E 25 / ran ‘3 > Regrowth z 8 § 2 20 *Efllcwency ’35 a .2 _ = 15 ,40 3 "J c: c _ E 10 745 E 5 750 g o 755 0 10 20 30 40 50 60 amp“: Power (W) Average
Data Sheet 1 of 12 Rev. 04, 2008-02-13
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DAB Drive-up at 28 Volts
0
5
10
15
20
25
30
35
010 20 30 40 50 60
Output Power (W) Average
Drain Efficiency (%)
-55
-50
-45
-40
-35
-30
-25
-20
Spectral Regrowth (dBc)
Efficiency
Regrowth
VDD = 28 V, f = 1500 MHz, IDQ = 1.5 A, DAB mode 2
PTF141501E
Description
The PTF141501E is a 150-watt, GOLDMOS® FET intended for DAB
applications. This device is characterized for Digital Audio Broadcast
operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization ensures
excellent device lifetime and reliability.
PTF141501E
Package H-30260-2
Thermally-Enhanced High Power RF LDMOS FET
150 W, 1450 – 1500 MHz, 1600 – 1700 MHz
RF Characteristics
DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 32 V, IDQ = 1.5 A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC ∆ 975 kHz
Characteristic Symbol Min Typ Max Unit
Spectral Regrowth RGTH —–30 —dBc
Gain Gps —16.5 —dB
Drain Efficiency ηD—29 —%
Features
•Thermally-enhanced package, pB-free and
RoHS-compliant
•Broadband internal matching
•Typical DAB Mode 2 performance at 1500
MHz, 32 V
- Average output power = 50 W
- Efficiency = 28%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz fC
•Typical DAB Mode 2 performance at 1500
MHz, 28 V
- Average output power = 40 W
- Efficiency = 26%
- Spectral regrowth = –31 dBc
- ∆ 975 kHz fC
•Typical CW performance, 1500 MHz, 28 V
- Minimum output power = 150 W
- Linear gain = 16.5 dB
- Efficiency = 48% at P–1dB
•Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR at 28 V, 150
W (CW) output power
*See Infineon distributor for future availability.
@160"
Data Sheet 2 of 12 Rev. 04, 2008-02-13
PTF141501E
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1.5 A, POUT = 150 WPEP, f = 1500 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.0 16.5 —dB
Drain Efficiency ηD35 — — %
Intermodulation Distortion IMD —–30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.07 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1.5 A VGS 2.5 3.3 4.0 V
Gate Leakage Current VGS = +10 V, VDS = 0 VIGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD438 W
Above 25°C derate by 2.5 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RθJC 0.4 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTF141501E H-30260-2 Thermally-enhanced slotted flange, single-ended PTF141501E
*See Infineon distributor for future availability.
@160" DAB Drive-up al 32 Volts vDD : 32.1DO : 1.5 A. r: 1500 MHZ, DAB Mode 2 CW Sweep in 3 Broadband Tesi Fixlure vDD : 2a v.1DO : 1.5 A PM (CW) : 30 w Oulpul Power (W) CW Output Power (W) Average 35 .20 ,2 30 0 u\° 30 .25 3 3 25 iDram Eflrcrency .5 ’5‘ / m : a 3 25 730 3 g E 3 g E 2a 710 fl 1: 20 ,Emmency , .35 o w o a) _ E 4 Hegrowm 8‘ ,fi ‘5 45 E : 15 740 I 5 Gain 5 w _ m .E E E 10 .20 DE 2 ‘0 '45 g )1 \/ Herurn Loss 5 D a m 2 5 750 m g 5 .25 7 E 0 755 5 a 730 0 ‘0 20 30 40 50 50 1400 1450 1500 1550 1600 Output Power (W) Average Frequency(MHZ) CW Sweep Intermodulalion Dismrlion Products for Varying Bias Conditions vs. Output Power VDD : 28 v.1: 1500 MHz VDD : 28, IDO : 1.5 AJ:1,5 GHz, zone spacmg : 1 MHz 17 .25 45 a 730 W13 3 ’— 5 735 35 03 E . . E .40 Dram Eurcrency 111/15 , ; g IDD : 0.9 A a E E c: .45 25 2 ‘ri \ 1 c / 2 2 = ‘5 ‘5 00:0.“ a r50 )71 I 01 — c g .55 I 15 E E //W‘\\_ 1M7 c: _ 760 g / v 14 7 765 5 1 10 mg 1000 0 20 40 60 so 100
Data Sheet 3 of 12 Rev. 04, 2008-02-13
PTF141501E
Typical Performance
DAB Drive-up at 32 Volts
VDD = 32, IDQ = 1.5 A, f = 1500 MHz, DAB Mode 2
0
5
10
15
20
25
30
35
0 10 20 30 40 50 60
Output Power (W) Average
Drain Efficiency (%) .
-55
-50
-45
-40
-35
-30
-25
-20
Spectral Regrowth (dBc)
Efficiency Regrowth
CW Sweep in a Broadband Test Fixture
VDD = 28 V, IDQ = 1.5 A, POUT (CW) = 30 W
0
5
10
15
20
25
30
1400 1450 1500 1550 1600
Frequency (MHZ)
-30
-25
-20
-15
-10
-5
0
Input Return Loss (dB)
Gain
Drain Efficiency
Return Loss
Gain (dB) and Drain Efficiency (%) .
CW Sweep
for Varying Bias Conditions
VDD = 28 V, f = 1500 MHz
14
15
16
17
1 10 100 1000
Output Power (W) CW
Gain (dB)
IDQ = 1.2 A
IDQ = 0.6 A
IDQ = 0.9 A
IDQ = 1.5 A
Intermodulation Distortion Products
vs. Output Power
VDD = 28, IDQ = 1.5 A, f = 1.5 GHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 20 40 60 80 100
Output Power (W) Average
5
15
25
35
45
Drain Efficiency (%) .
Drain Efficiency
IM3
IM5
IM7
Intermodulation Distortion (dBc)
@160" lnlermodulalion Distortion vs. Output Power Bias Vollage vs. Temperature lor Various '00 Voltage normallzed to lyplcal gate voltage. VDD : 28,1:15 GHZ Senes show current. 725 1.04 +0.90 A .30 Ino:1-1A 1.03 +2.10A a) .35 g 1.02 l 4.50A A 740 E 1.01 —o—7.50 A o g .45 luo:1.3A g 1.00 +1050A m .50 8 0.99 +1350 A E IDO : 1.5 A N '55 g 0.95 , , E 60 IDO , 1.7 A g 0.97 \i '65 1m : 1.9 A 0.96 \ '70 0.95 0 50 ‘00 ‘50 720 0 20 40 60 00 100 0mm" POWGF (W) AveVage Case Temperature (90) MHz D Z Source 2 Load ‘—‘ G '—> s . a Frequency Z Source (2 2 Load (2 mm: a 1x a 1x ' 1400 5.00 —6.70 0.94 1.27 1500 MHZ 1450 4.50 —5.90 0.90 1.73 1500 4.20 —5.1 0 0.86 2.21 1400 MHZ 1550 3.90 —4.30 0.82 2.60 1600 3.70 —3.70 0.80 3.05 Dara Sheel 4 of 12 Rev. 04, 2008-02-
Data Sheet 4 of 12 Rev. 04, 2008-02-13
PTF141501E
Intermodulation Distortion vs. Output Power
for Various IDQ
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 50 100 150
Output Power (W) Average
IM3 (dBc)
VDD = 28, f = 1.5 GHz
I
DQ
= 1.5 A
I
DQ
= 1.7 A
I
DQ
= 1.9 A
I
DQ
= 1.1 A
IDQ = 1.3 A
Bias Voltage vs. Temperature
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.04
-20 0 20 40 60 80 100
Case Temperature (ºC)
Normalized Bias Voltage
0.90 A
2.10 A
4.50 A
7.50 A
10.50 A
13.50 A
Voltage normalized to typical gate voltage.
Series show current.
Broadband Circuit Impedance, 1500 MHz
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1400 5.00 –6.70 0.94 1.27
1450 4.50 –5.90 0.90 1.73
1500 4.20 –5.10 0.86 2.21
1550 3.90 –4.30 0.82 2.60
1600 3.70 –3.70 0.80 3.05
Typical Performance (cont.)
0.1
0.2
0.1
0.1
D
G
E
E
-
-
-
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1400 MHz
1400 MHz
1600 MHz
Z Load
Z Source
1600 MHz
Z0 = 50 Ω
@160" u lam Law 1m thu YJDF M Dqu muF 35v cm L05 luvs icw "apF m; m; mu; LT—T_iaw
Data Sheet 5 of 12 Rev. 04, 2008-02-13
PTF141501E
141501a-1500_sch
RF_OUT
Q1
R3
2K V
R4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3K VR1
1.2K V
LM7805
C1
0.001µF
VDD
QQ1
Q1
5.1K10µF
35V
C4
10
R6V
0.1µF
C5 R7
l6
V7.5pF
C6
l7
C11
1µF13pF
C10
L1
35V
C12
0.1µF
C13
10µF
VDD
l4l3l2l1
0.3pF
C8 C9
2.4pF
C7
33pF
l11l10 l14l13l12l9l5
C14
l8
C15
C18
0.7pF
L2
C16 C17
C20
0.3pF
DUT
C19
33pF
10µF
35V
13pF 1µF 0.1µF
R5
5.1K V
RF_IN
Reference Circuit for 1500 MHz
Reference Circuit Schematic for 1500 MHz
Circuit Assembly Information
DUT PTF141501E LDMOS Transistor
PCB 0.76 mm [0.030"] thick, εr = 4.5 TMM4 2 oz. copper, both sides
Microstrip Electrical Characteristics at 1500 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.043 λ, 50.0 Ω4.67 x 1.47 0.185 x 0.058
l20.118 λ, 42.0 Ω12.70 x 1.85 0.500 x 0.073
l30.015 λ, 42.0 Ω1.57 x 1.85 0.062 x 0.073
l40.012 λ, 14.7 Ω1.22 x 7.57 0.048 x 0.298
l50.052 λ, 8.0 Ω5.08 x 15.19 0.200 x 0.598
l60.182 λ, 60.0 Ω20.17 x 0.97 0.794 x 0.038
l70.283 λ, 63.0 Ω31.45 x 0.89 1.238 x 0.035
l80.283 λ, 63.0 Ω31.45 x 0.89 1.238 x 0.035
l90.026 λ, 4.6 Ω 2.46 x 27.89 0.097 x 1.098
l10 0.086 λ, 4.6 Ω 8.23 x 27.89 0.324 x 1.098
l11 0.061 λ, 9.4 Ω5.97 x 12.62 0.235 x 0.497
l12 0.011 λ, 50.0 Ω1.14 x 1.47 0.045 x 0.058
l13 0.056 λ, 50.0 Ω6.10 x 1.47 0.240 x 0.058
l14 0.010 λ, 50.0 Ω1.07 x 1.47 0.042 x 0.058
1Electrical Characteristics are rounded.
@eon 63 msumua I ’ ’ — — - ‘ \ x / \ I \ / \ I 4x , \ VDD I, \\ , 5 Cs R4 R3 03 C1 VDD | l e | l 001 I REOUT ‘ C4 to E LM 2/ C2 I VDD \\ 35v |:| fi/ ‘ 1 ’ 0‘ \ R 6 Si] ’2’ R1 7/ ’ HISOloULDE cfi
Data Sheet 6 of 12 Rev. 04, 2008-02-13
PTF141501E
141501ef-1500_assy
C14
C15
10
35V
+
LM
10
35V
+
10
35V
+
C4
C5
R6 R7
C1
C10
C6
C19
C7
R1 C13
C17
C9
R4R5
RF_IN RF_OUT
C16
C11
QQ1
L1
R3
Q1
C20
C8
C2
C3 VDD
R2
C18
C12
VDD
VDD
L2
Reference Circuit for 1500 MHz (cont.)
Reference circuit (not to scale)*
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF, 50 V, 0603 Digi-Key PCC1772CT-ND
C4, C13, C17 Capacitor, 10 µF, 35 V, SMD Digi-Key PCS6106TR-ND, Tant. TE Series
C5, C12, C16 Capacitor, 0.1 µF, 50 V, 1206 Digi-Key P4525-ND
C6 Capacitor, 7.5 pF ATC 100A 7R5
C7 Capacitor, 33 pF ATC 100A 330
C8 Capacitor, 0.3 pF ATC 100A 0R3
C9 Capacitor, 2.4 pF ATC 100A 2R4
C10, C14 Capacitor, 13 pF ATC 100B 130
C11, C15 Capacitor, 1 µF, 50 VDigi-Key 19528-ND
C18 Capacitor, 0.7 pF ATC 100B 0R7
C19 Capacitor, 33 pF ATC 100B 330
C20 Capacitor, 0.3 pF ATC 100B 0R3
L1, L2 Ferrite, 6 mm Philips 53/3/4.6-452
Q1 Transistor Infineon BCP56
QQ1 Voltage regulator Digi-Key LM7805
R1 Resistor, 1.2 k-ohms, 1/10 W, 0603 Digi-Key P1.2KGCT-ND
R2 Resistor, 1.3 k-ohms, 1/10 W, 0603 Digi-Key P1.3KGCT-ND
R3 Resistor, 2 k-ohms, 1/10 W, 0603 Digi-Key P2KGCT-ND
R4 Potentiometer, 2 k-ohms, 0.25 W Digi-Key 3224W-202ETR-ND
R5, R7 Resistor, 5.1 k-ohms, 1/4 W, 1206 Digi-Key P5.1KECT-ND
R6 Resistor, 10 ohms, 1/4 W, 1206 Digi-Key P10ECT-ND
*Gerber files for this circuit are available on request.
141501ef-1500_dtl
10
35V
+
LM
C4
C5
R6 R7
C1
C6
R1
R4R5
QQ1
R3
Q1
C2
C3 VDD
R2
@160" cw Power Sweep Frequency Sweep, 1.6 — 1.7 GHz (1600 MHz application circuit) VDD : 28 V, IDD : 1.2 A VDD:28VIDQ:12AI:1675MHZ 17 50 17 40 A 16 c\u 16 A Gain / 5 A m 30 : m g a) -c c 15 7 7>§ E 15 7777 '1? t .fi <1! 20="" l151=""><1! 14="" #="" eiiiciency="" m="" g="" 14="" 1:1="" 0="" 1:1="" 0="" 20="" 40="" 60="" 50="" 100="" 120="" 140="" 150="" 150="" 1530="" 1600="" 1620="" 1540="" 1550="" 1530="" 1700="" 1720="" 0mp“="" power="" (w)="" frequency="" (mhz)="" 2-tone="" drive-up="" at="" optimum="" current="" vdd="" :="" 28="" v,="" ido="" :="" 1.2="" a="" 1‘="" :="" 1675="" mhz,="" 12:="" 1676="" mhz="" 0="" 35="" "0="" thmency="" 30="" 720="" 25="" es="" 730="" 20="" e="" &="" 3rd="" order="" 740="" 15="" g="" 5m="" ,50="" v="" m="" i="" 10="" 760="" f="" 5="" ,70="" n="" 0="" 20="" 40="" 60="" 30="" 100="" output="" power="" (w)="" average="">
Data Sheet 7 of 12 Rev. 04, 2008-02-13
PTF141501E
Alternate Application for 1600 MHz
Typical Performance
CW Power Sweep
(1600 MHz application circuit)
VDD = 28 V, IDQ = 1.2 A, f = 1675 MHz
13
14
15
16
17
0 20 40 60 80 100 120 140 160 180
Output Power (W)
Gain (dB)
0
10
20
30
40
50
Drain Efficiency (%)
Efficiency
Gain
Frequency Sweep, 1.6 – 1.7 GHz
VDD = 28 V, IDQ = 1.2 A
13
14
15
16
17
1580 1600 1620 1640 1660 1680 1700 1720
Frequency (MHz)
Gain (dB)
2-Tone Drive-up at Optimum Current
VDD = 28 V, IDQ = 1.2 A, f1 = 1675 MHz, f2 = 1676 MHz
-70
-60
-50
-40
-30
-20
-10
0
020 40 60 80 100
Output Power (W) Average
IMD (dBc)
0
5
10
15
20
25
30
35
3rd Order
7th
5th
Efficiency
@160" W E] r 1675 1700 ; jg ; 2 2 :- 2 3 i— ‘7 .3 7 ‘ § 4 ‘ a w ‘ m ‘ ‘ ,, % ‘ 1700MHz * 5) ZLoad [ : 1600MHz B 1700MHz 5; 1600MHz \.\-\ 1 E \ See next page for alternate Reference Circui‘, 1600 MHz Da‘a Shee: 8 of 12 Rev. 04, 2008-02-13
Data Sheet 8 of 12 Rev. 04, 2008-02-13
PTF141501E
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1600 9.5 –5.6 0.9 –5.8
1625 9.6 –5.2 0.8 –5.4
1650 9.8 –5.0 0.8 –5.2
1675 9.9 –4.7 0.8 –5.0
1700 10.0 –4.4 0.8 –4.8
Broadband Circuit Impedance, 1600 MHz
See next page for alternate Reference Circuit, 1600 MHz
Z Source Z Load
G
S
D
0.1
0.3
0.5
0.2
0.4
0.1
-
W
A
V
<
-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1700 MHz
1700 MHz
1600 MHz
Z Load
Z Source
1600 MHz
Z0 = 50 Ω
@160" vw
Data Sheet 9 of 12 Rev. 04, 2008-02-13
PTF141501E
l1
141501a-1600_sch
C14
DDV
C9
+C8C7
L1
l13
C10
l11 l12
+C13C12
L2
C6
C3R2
l10
l7
DUT
l9
C11
l8
l6
l5l4l3
10V
C2
R1
C1+
C4
l2
RF_IN
VDD
C5
R7
C20
C19
R4
C18
LM7805
R3
Q1
QQ1
R6 R5
10µF
35V
10µF
35V
1µF
1µF
7.5pF
0.1µF
0.1µF
13pF5.1kV7.5pF
13pF
0.1µF
15pF
10µF
35V
1.7pF
3.3kV
0.001µF
0.001µF
BCP56
1.3kV1.2kV
0.001µF
24kV10KV
RF_OUT
Reference Circuit Schematic for 1600 MHz
Reference Circuit for 1600 MHz
Circuit Assembly Information
DUT PTF141501E LDMOS Transistor
PCB 0.76 mm [0.030"] thick, εr = 4.5 TMM4 2 oz. copper, both sides
Microstrip Electrical Characteristics1 at 1500 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.043 λ, 50.0 Ω4.67 x 1.47 0.185 x 0.058
l20.065 λ, 42.0 Ω6.73 x 1.85 0.265 x 0.073
l30.065 λ, 42.0 Ω6.73 x 1.85 0.265 x 0.073
l40.012 λ, 14.7 Ω1.22 x 7.57 0.048 x 0.298
l50.052 λ, 8.0 Ω5.08 x 15.19 0.200 x 0.598
l60.182 λ, 60.0 Ω20.17 x 0.97 0.794 x 0.038
l70.283 λ, 63.0 Ω31.45 x 0.89 1.238 x 0.035
l80.283 λ, 63.0 Ω31.45 x 0.89 1.238 x 0.035
l90.112 λ, 4.6 Ω 10.67 x 27.89 0.420 x 1.098
l10 0.016 λ, 9.4 Ω 1.52 x 27.89 0.060 x 0.497
l11 0.053 λ, 34.0 Ω5.72 x 12.62 0.225 x 0.100
l12 0.011 λ, 50.0 Ω1.14 x 1.47 0.045 x 0.058
l13 0.066 λ, 50.0 Ω7.17 x 1.47 0.282 x 0.058
1Electrical Characteristics are rounded.
@160" (I) MlSOl‘nJZ D MlSDlnut_DE C!) / / I \ / /R7 02 R5 R6 02 2 [C1 l \ \R1C3R2 E \ 18\ VD\ \ E 6 $00 | R3 m I / j / \ / \\~*\_ 7
Data Sheet 10 of 12 Rev. 04, 2008-02-13
PTF141501E
Reference Circuit for 1600 MHz (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C9, C14 Capacitor, 10 µF, 35 V, Tant. TE Series Digi-Key PCS6106TR-ND, SMD
C2, C8, C13 Capacitor, 0.1 µF, 50 V, 1206 Digi-Key P4525-ND
C3 Capacitor, 7.5 pF ATC 100A 7R5
C4 Capacitor, 15 pF ATC 100B 150
C10 Capacitor, 7.5 pF ATC 100B 7R5
C5 Capacitor, 1.7 pF ATC 100B 1R7
C6, C11 Capacitor, 13 pF ATC 100B 130
C7, C12 Capacitor, 1 µF, 50 VDigi-Key 19528-ND
C18, C19, C20 Capacitor, 0.001 µF, 50 V, 0603 Digi-Key PCC1772CT-ND
L1, L2 Ferrite, 6 mm Philips 53/3/4.6-452
Q1 Transistor Infineon BCP56
QQ1 Voltage regulator Digi-Key LM7805
R1 Resistor, 10 ohms, 1/4W, 1206 Digi-Key P10ECT-ND
R2 Resistor, 5.1 k-ohms, 1/4W, 1206 Digi-Key P5.1KECT-ND
R3 Resistor, 1.2 k-ohms, 1/10W, 0603 Digi-Key P1.2KGCT-ND
R4 Resistor, 1.3 k-ohms, 1/10W, 0603 Digi-Key P1.3KGCT-ND
R5 Potentiometer, 10 k-ohms, 0.25W Digi-Key 3224W-103ETR-ND
R6 Resistor, 24 k-ohms, 1/10W, 0603 Digi-Key P24KGCT-ND
R7 Resistor, 3.3 k-ohms, 1/4W, 1206 Digi-Key P3.3KECT-ND
*Gerber files for this circuit are available on request.
Reference circuit for 1600 MHz* (not to scale)
141501ef-1600_assy
10
35V
+
LM
10
35V
+
10
35V
+
C1
C2
R1 R2
C18
C6
C3
C11
C12
C10
C4
R3 C9
C14
R4
R5
R7
RF_IN RF_OUT
C13
C7
QQ1
L1
R6
Q1
C8
C5
C19
C20
L1
VDD
VDD
VDD
141501ef-1600_dtl
C1
C2
R1 R2
C18
C3
R3
R4
R5R7
QQ1
R6
C19
C20 VDD
10
35V
+
LM
Q1
@160" 235:0 [350: 5 00331 [0015] 7A7
Data Sheet 11 of 12 Rev. 04, 2008-02-13
PTF141501E
Package Outline Specifications
Package H-30260-2
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
C
L
C
L
260-cases_30260 / 11-15-07
0.0381 [.0015] -A-
22.35±0.23
[.880±.009]
(2X 4.83±0.50
[.190±.020])
2X 12.70
[.500]
23.37±0.51
[.920±.020]
4X R 1.52
[.060]
2X 3.25
[.128]
34.04
[1.340]
D
S
G
FLANGE 13.72
[.540]
45° X 2.03
[.080]
SPH 1.57
[.062]
2X 1.63
[.064] R
4.11±0.38
[.162±.015]
27.94
[1.100]
C
L
1.02
[.040]
+0.10
LID 13.21 –0.15
+.004
[.520 ]
–.006
Data Sheet 12 of 12 Rev. 04, 2008-02-13
PTF141501E
Confidential – Limited Internal Distribution
Revision History: 2008-02-13 Data Sheet
Previous Version: 2005-08-30, Data Sheet
Page Subjects (major changes since last revision)
All Remove references to alternate products.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-02-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2003 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International

Products related to this Datasheet

IC FET RF LDMOS 150W H-30260-2