EE-SY310, 410 Datasheet by Omron Electronics Inc-EMC Div

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2m ‘5 2m OI'I'IROH
174 EE-SY310/-SY410 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY310/-SY410
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Features
Incorporates an IC chip with a built-in detector element and ampli-
fier.
Incorporates a detector element with a built-in temperature com-
pensation circuit.
Compact reflective model with a molded housing.
A wide supply voltage range: 4.5 to 16 VDC
Directly connects with C-MOS and TTL.
Dark ON model (EE-SY310)
Light ON model (EE-SY410)
Recommended sensing distance = 5.0 mm
Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
Dimensions Tolerance
3 mm max. ±0.2
3 < mm 6 ±0.24
6 < mm 10 ±0.29
10 < mm 18 ±0.35
18 < mm 30 ±0.42
Terminal No. Name
A Anode
K Cathode
V Power supply
(Vcc)
O Output (OUT)
G Ground (GND)
A
K
V
G
O
Five, 0.3
Two. R2Two. R1.5
15 to 18
17 to 24
Five, 0.5
Unless otherwise specified, the
tolerances are as shown below.
4.6
+0.2
0.3
Item Symbol Rated value
Emitter Forward current IF50 mA
(see note 1)
Reverse voltageVR4 V
Pulse forward
current
IFP 1 A
(see note 2)
Detector Power supply
voltage
VCC 16 V
Output voltageVOUT 28 V
Output current IOUT 16 mA
Permissible out-
put dissipation
POUT 250 mW
(see note 1)
Ambient tempera-
ture
OperatingTopr –40°C to 75°C
StorageTstg –40°C to 85°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltageVF1.2 V typ., 1.5 V max. IF = 20 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP920 nm typ. IF = 20 mA
Detector Low-level output voltageVOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA,
without incident light (EE-SY310), with incident light
(EE-SY410) (see notes 1 and 2)
High-level output voltageVOH 15 V min. Vcc = 16 V, RL = 1 kΩ,
with incident light (EE-SY310), without incident light
(EE-SY410) (see notes 1 and 2)
Current consumption ICC 3.2 mA typ., 10 mA max. Vcc = 16 V
Peak spectral sensitivity
wavelength
λP870 nm typ. VCC = 4.5 to 16 V
LED current when output is OFF IFT 6 mA typ., 15 mA max. VCC = 4.5 to 16 V
LED current when output is ON
Hysteresis ΔH 17% typ. VCC = 4.5 to 16 V
Response frequency f 50 Hz min. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time tPLH (tPHL)3 μs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Response delay time tPHL (tPLH) 20 μs typ. VCC = 4.5 to 16 V, IF = 15 mA, IOL = 16 mA
Be sure to read Precautions on page 24.
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EE-SY310/-SY410 Photomicrosensor (Reflective) 175
Engineering Data
Note: The values in the parentheses apply to the EE-SY410.
Input
Output
Input
Output
EE-SY310 EE-SY410
200 mm dia.
15 mm
5 mm
15 mm
15 mm
(tPLH)(tPHL)(tPLH)(tPHL)
Note: 1. With incident light" denotes the condition whereby
the light reflected by white paper with a reflection
factor of 90% at a sensing distance of 5 mm is
received by the photo IC when the forward current (IF)
of the LED is 20 mA.
2. Sensing object: White paper with a reflection factor of
90% at a sensing distance of 5 mm.
3. Hysteresis denotes the difference in forward LED
current value, expressed in percentage, calculated
from the respective forward LED currents when the
photo IC is turned from ON to OFF and when the
photo IC is turned from OFF to ON.
4. The value of the response frequency is measured by rotating
the disk as shown below.
5. The following illustrations show the definition of response delay
time. The value in the parentheses applies to the EE-SY410.
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
LED Current vs. Supply Voltage
(Typical)
LED Current vs. Ambient
Temperature Characteristics
(Typical)
Low-level Output Voltage vs.
Output Current (Typical)
Current Consumption vs. Supply
Voltage (Typical)
Response Delay Time vs. Forward
Current (Typical)
Sensing Position Characteristics
(Typical)
Low-level Output Voltage vs.
Ambient Temperature
Characteristics (Typical)
Distance d2 (mm)
Distance d1 (mm)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IFT OFF (IFT ON)
IFT ON (IFT OFF)
IOL = 16 mA
IOL = 5 mA
VOUT
(EE-SY3@@)
VOUT
(EE-SY4@@)
tPHL (tPLH)
Sensing object: White
paper with a reflection
factor of 90%
IF = 20 mA
VCC = 5 V
Ta = 25°C
Operate
Release
Current consumption Icc (mA)
Forward voltage VF (V)Supply voltage VCC (V)
Low level output voltage VOL (V)
Supply voltage VCC (V)Forward current IF (mA)
VCC = 5 V
IF = 0 mA (15 mA)
Ta = 25°C
IF = 0 mA (15 mA)
VCC = 5 V
RL = 330 Ω
Ta = 25°C
Ambient temperature Ta (°C)
Output allowable dissipation PC (mW)
Forward current IF (mA)
Forward current IF (mA)
LED current IFT (mA)
Ta = 25°C
RL = 1 kΩ
Response delay time tPHL, tPLH (μs)
VCC = 5 V
Ta = 25°C
LED current IFT (mA)
Ambient temperature Ta (°C)
VCC = 5 V
RL = 330 Ω
Ta = 30°C
Ta = 25°C
Ta = 70°C
Low level output voltage VOL (V)
Output current IOUT (mA) Ambient temperature Ta (°C)
IF = 0 mA (15 mA)

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